Microsemi DME150 150 watts, 50 volts, pulsed avionics 1025 - 1150 mhz Datasheet

DME 150
150 Watts, 50 Volts, Pulsed
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The DME 150 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and ouput prematch for
broadband capabilit. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55AY, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
Maximum Voltage and Current
BVces
Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
290 Watts
55 Volts
4.0 Volts
15 Amps
- 65 to + 150oC
+ 150oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
Pout
Pin
Pg
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1025 MHz
150
ηc
VSWR
BVebo
BVces
hFE
θjc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 15 mA
Ic = 25 mA
Ic = 250 mA, Vce = 5 V
TYP
MAX
25
7.8
8.3
40
UNITS
Watts
Watts
dB
%
20:1
4.0
55
20
Volts
Volts
100
0.6
o
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Rev A January 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
DME150
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
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