Diodes GBJ2506 25a glass passivated bridge rectifier Datasheet

GBJ25005 - GBJ2510
25A GLASS PASSIVATED BRIDGE RECTIFIER
Features
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Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 350A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
GBJ
L
A
K
M
_
Mechanical Data
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J
S
N
P
D
H
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
Marking: Type Number
B
C
G
E
Min
Max
A
29.70
30.30
B
19.70
20.30
C
17.00
18.00
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
K
R
I
Dim
E
3.0 X 45°
L
4.40
M
3.40
4.80
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
(Note 1)
@ TC = 100°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (per element)
@ IF = 12.5A
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 125°C
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Symbol
GBJ
25005
GBJ
2501
GBJ
2502
GBJ
2504
GBJ
2506
GBJ
2508
GBJ
2510
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
25
A
IFSM
350
A
VFM
1.05
V
IR
10
500
µA
I2t
510
A2s
Typical Junction Capacitance (per element) (Note 2)
Cj
85
pF
Typical Thermal Resistance Junction to Case (Note 3)
RqJC
0.6
°C/W
Tj, TSTG
-65 to +150
°C
Operating and Storage Temperature Range
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
DS21221 Rev. D-2
1 of 2
GBJ25005-GBJ2510
with heatsink
25
20
15
10
without heatsink
5
Resistive or
Inductive load
0
25
50
75
100
125
150
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
30
Tj = 25°C
10
1.0
0.1
Pulse width = 300µs
0.01
0
1.2
1.6
2.0
TJ = 25°C
f = 1MHz
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
0.8
1000
Single half-sine-wave
(JEDEC method)
400
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
Tj = 25°C
300
200
100
100
0
1
1
100
10
10
1.0
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
1000
Tj = 150°C
Tj = 125°C
100
Tj = 100°C
10
1.0
Tj = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21221 Rev. D-2
2 of 2
GBJ25005-GBJ2510
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