NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for prototyping and early production applications as well as nonerasable, plastic packaged versions that are ideal for high volume and automated assembly applications. ■ High performance CMOS — 90 ns access time ■ Fast turn-off for microprocessor compatibility ■ Simplified upgrade path —VPP and PGM are “Don’t Care” during normal read operation The NM27C210 operates from a single 5 volt ±10% supply in the read mode. ■ Compatible with 27210 and 27C210 EPROMs ■ Manufacturer’s identification code The NM27C210 is offered in both DIP and surface mount packages. The DIP package is a 40-pin dual-in-line ceramic with a quartz window to allow erasing. The surface mount package is a 44-pin PLCC that is offered in OTP. ■ Fast programming ■ JEDEC standard pin configuration — 40-pin CDIP package — 40-pin PDIP package — 44-pin PLCC package This EPROM is manufactured using Fairchild’s proprietary AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. Block Diagram Vcc Data Outputs O0 - O15 GND Vpp OE PGM Output Enable Chip Enable, and Program Logic Output Buffers CE Y Decoder A0 - A15 Address Inputs 4,194,304-Bit Cell Matrix X Decoder DS011093-1 AMG™ is a trademark of WSI, Inc. © 1998 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM July 1998 DIP PIN CONFIGURATIONS DIP NM27C210 27C280 27C240 27C220 A18 CE/PGM O15 O14 O13 O12 O11 O10 O9 O8 GND O7 O6 O5 O4 O3 O2 O1 O0 OE/VPP XXVPP CE/PGM O15 O14 O13 O12 O11 O10 O9 O8 GND O7 O6 O5 O4 O3 O2 O1 O0 OE XXVPP CE O15 O14 O13 O12 O11 O10 O9 O8 GND O7 O6 O5 O4 O3 O2 O1 O0 OE XX/VPP CE O15 O14 O13 O12 O11 O10 O9 O8 GND O7 O6 O5 O4 O3 O2 O1 O0 OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 27C220 27C240 27C280 VCC PGM A16 A15 A14 A13 A12 A11 A10 A9 GND A8 A7 A6 A5 A4 A3 A2 A1 A0 VCC XX/PGM NC A15 A14 A13 A12 A11 A10 A9 GND A8 A7 A6 A5 A4 A3 A2 A1 A0 VCC A17 A16 A15 A14 A13 A12 A11 A10 A9 GND A8 A7 A6 A5 A4 A3 A2 A1 A0 VCC A17 A16 A15 A14 A13 A12 A11 A10 A9 GND A8 A7 A6 A5 A4 A3 A2 A1 A0 DS011093-7 Note: Compatible EPROM pin configurations are shown in the blocks adjacent to the NM27C210 pins. Commercial Temperature Range (0°C to +70°C) VCC = 5V ±10% Pin Names A0–A15 Addresses Access Time (ns) CE Chip Enable NM27C210 Q, V, N 90 90 OE Output Enable NM27C210 Q, V, N 120 120 O0–O15 Outputs NM27C210 Q, V, N 150 150 PGM Program Parameter/Order Number Industrial Temperature Range (-40°C to +85°C) VCC = 5V ±10% Access Time (ns) NM27C210 QE, VE, NE 120 120 NM27C210 QE, VE, NE 150 150 Don’t Care (During Read) NC No Connect PLCC Pin Configuration O13 O14 O15 CE XX/VPP NC VCC XX/PGM NC A15 A14 Parameter/Order Number XX O12 O11 O10 O9 O8 GND NC O7 O6 O5 O4 Package Types: NM27C210 Q, V, N XXX Q = Quartz-Windowed Ceramic DIP package N = Plastic DIP package V = PLCC package • All packages conform to JEDEC standard. O3 O2 O1 O0 OE NC A1 A2 A2 A3 A4 • All versions are guaranteed to function in slower applications. 39 7 6 5 4 3 2 4443424140 A13 1 A12 8 38 9 37 A11 10 36 A10 11 35 A9 12 34 GND 13 33 NC 14 32 A8 15 31 A7 16 30 A6 A5 181920212223242526 2728 29 17 Top View 2 DS011093-3 www.fairchildsemi.com NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM Connection Diagrams Storage Temperature All Output Voltages with Respect to Ground (Note 10) -65°C to +150°C VCC + 1.0V to GND - 0.6V Operating Range All Input Voltages except A9 with Respect to Ground (Note 10) -0.6V to +7V VPP and A9 with Respect to Ground Range -0.6V to +14V VCC Supply Voltage with Respect to Ground -0.6V to +7V ESD Protection VCC Tolerance Commercial Temperature 0°C to +70°C +5V ±10% Industrial -40°C to +85°C +5V ±10% >2000V DC Read Characteristics Over Operating Range with VPP = VCC Symbol Parameter Test Conditions Min Max Units VIL Input Low Level -0.5 0.8 V VIH Input High Level 2.0 VCC +1 V VOL Output Low Voltage 0.4 V VOH Output High Voltage IOH = -2.5 mA ISB1 VCC Standby Current (CMOS) CE = VCC ± 0.3V 100 µA ISB2 VCC Standby Current CE = VIH 1 mA ICC VCC Active Current CE = OE = VIL I/O = 0 mA 40 mA IPP VPP Supply Current VPP = VCC 10 µA ILI Input Load Current VIN = 5.5 or GND -1 1 µA ILO Output Leakage Current VOUT = 5.5V or GND -10 10 µA IOL = 2.1 mA 3.5 V f = 5 MHz AC Read Characteristics Over Operating Range with VPP = VCC Symbol Parameter 90 Min Max Min 120 Max Min 150 Max tACC Address to Output Delay 90 120 150 tCE CE to Output Delay 90 120 150 tOE OE to Output Delay 50 50 50 tDF (Note 2) Output Disable to Output Float 30 35 45 tOH (Note 2) Output Hold from Addresses, CE or OE , Whichever Occurred First 0 0 Units ns 0 Capacitance (Note 2) TA = +25°C, f = 1 MHz Symbol CIN COUT Parameter Conditions Typ Max Units Input Capacitance VIN = 0V 12 20 pF Output Capacitance VOUT = 0V 13 20 pF 3 www.fairchildsemi.com NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM Absolute Maximum Ratings (Note 1) Output Load 1 TTL Gate and CL = 100 pF (Note 8) ≤5 ns Input Rise and Fall Times Input Pulse Levels 0.45V to 2.4V Timing Measurement Reference Level Inputs Outputs 0.8V and 2V 0.8V and 2V AC Waveforms (Note 6) , (Note 7) , (Note 9) Adresses 2.0V 0.8V CE 2.0V 0.8V Addresses Valid tCE tCF Notes 4, 5 OE Output 2.0V 0.8V 2.0V 0.8V tOE tDF Note 3 Notes 4, 5 High Z High Z tACC tOH DS011093-4 Note 3 Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 2: This parameter is only sampled and is not 100% tested. Note 3: OE may be delayed up to tACC - tOE after the falling edge of CE without impacting tACC. Note 4: The tDF and tCF compare level is determined as follows: High to TRI-STATE®, the measured VOH1 (DC) - 0.10V; Low to TRI-STATE, the measured VOL1 (DC) + 0.10V. Note 5: TRI-STATE may be attained using OE or CE . Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 µF ceramic capacitor be used on every device between VCC and GND. Note 7: The outputs must be restricted to VCC + 1.0V to avoid latch-up and device damage. Note 8: 1 TTL Gate: IOL = 1.6 mA, IOH = -400 µA. CL: 100 pF includes fixture capacitance. Note 9: VPP may be connected to VCC except during programming. Note 10: Inputs and outputs can undershoot to -2.0V for 20 ns Max. 4 www.fairchildsemi.com NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM AC Test Conditions Symbol Parameter Conditions Min Typ Max Units tAS Address Setup Time 1 µs tOES OE Setup Time 1 µs tCES CE Setup Time 1 µs tDS Data Setup Time 1 µs tVPS VPP Setup Time 1 µs tVCS VCC Setup Time 1 µs OE = VIH tAH Address Hold Time 0 µs tDH Data Hold Time 1 µs tDF Output Enable to Output Float Delay tPW Program Pulse Width tOE Data Valid from OE IPP VPP Supply Current during Programming Pulse ICC VCC Supply Current TA Temperature Ambient 20 VCC Power Supply Voltage 6.25 6.5 6.75 V VPP Programming Supply Voltage 12.5 12.75 13.0 V tFR Input Rise, Fall Time VIL Input Low Voltage VIH Input High Voltage 2.4 tIN Input Timing Reference Voltage 0.8 2.0 V Output Timing Reference Voltage 0.8 2.0 V tOUT CE = VIL 0 60 ns 105 µs CE = VIL 100 ns CE = VIL PGM = VIL 40 mA 50 mA 30 °C 45 50 25 5 ns 0.0 0.45 4.0 V V Programming Waveforms (Note 13) Program Adresses 2.0V 0.8V Program Verify Address N tAH tAS Data Data In Stable Add N 2.0V 0.8V tDS VCC VPP CE/PGM Data Out Valid Add N tDF tDH 6.25V tVCS 12.75V tVPS 2.0V 0.8V tPW OE High Z tOES tOE 2.0V 0.8V DS011093-5 Note 11: Fairchild’s standard product warranty applies only to devices programmed to specifications described herein. Note 12: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP. The EPROM must not be inserted into or removed from a board with voltage applied to VPP or VCC. Note 13: The maximum absolute allowable voltage which may be applied to the VPP pin during programming is 14V. Care must be taken when switching the VPP supply to prevent any overshoot from exceeding this 14V maximum specification. At least a 0.1 µF capacitor is required across VPP, VCC to GND to suppress spurious voltage transients which may damage the device. Note 14: Programming and program verify are tested with the turbo Program Algorithm, at typical power supply voltages and timings. Note 15: During power up the PGM pin must be brought high (≥VIH) either coincident with or before power is applied to VPP. 5 www.fairchildsemi.com NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM Programming Characteristics (Note 11), (Note 12), (Note 13), (Note 14), and (Note 15) NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM Turbo Programming Algorithm Flow Chart VCC = 6.5V VPP = 12.75V n=0 ADDRESS = FIRST LOCATION PROGRAM ONE 50µs PULSE INCREMENT n NO DEVICE FAILED YES n = 10? FAIL VERIFY BYTE PASS LAST ADDRESS ? NO INCREMENT ADDRESS n=0 YES ADDRESS = FIRST LOCATION VERIFY BYTE FAIL PASS INCREMENT ADDRESS NO PROGRAM ONE 50 µs PULSE LAST ADDRESS ? YES CHECK ALL BYTES 1ST: VCC = VPP = 6.0V 2ND: VCC = VPP = 4.3V DS011093-6 Note: The standard National Semiconductor algorithm may also be used but it will have longer programming time. FIGURE 1. 6 www.fairchildsemi.com The EPROM is in the programming mode when the VPP power supply is at 12.75V and OE is at VIH. It is required that at least a 0.1 µF capacitor be placed across VPP, VCC to ground to suppress spurious voltage transients which may damage the device. The data to be programmed is applied 16 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. DEVICE OPERATION The six modes of operation of the EPROM are listed in Table 1. It should be noted that all inputs for the six modes are at TTL levels. The power supplies required are VCC and VPP. The VPP power supply must be at 12.75V during the three programming modes, and must be at 5V in the other three modes. The VCC power supply must be at 6.5V during the three programming modes, and at 5V in the other three modes. When the address and data are stable, an active low, TTL program pulse is applied to the PGM input. A program pulse must be applied at each address location to be programmed. The EPROM is programmed with the Turbo Programming Algorithm shown in Figure 1. Each Address is programmed with a series of 50 µs pulses until it verifies good, up to a maximum of 10 pulses. Most memory cells will program with a single 50 µs pulse. (The standard National Semiconductor Algorithm may also be used but it will have longer programming time). Read Mode The EPROM has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the outputs tOE after the falling edge of OE, assuming that CE has been low and addresses have been stable for at least tACC – tOE. The EPROM must not be programmed with a DC signal applied to the PGM input. Programming multiple EPROM in parallel with the same data can be easily accomplished due to the simplicity of the programming requirements. Like inputs of the parallel EPROM may be connected together when they are programmed with the same data. A low level TTL pulse applied to the PGM input programs the paralleled EPROM. Standby Mode The EPROM has a standby mode which reduces the active power dissipation by over 99%, from 200 mW to 0.5 mW. The EPROM is placed in the standby mode by applying a CMOS high signal to the CE input. When in standby mode, the outputs are in a high impedance state, independent of the OE input. Program Inhibit Programming multiple EPROM’s in parallel with different data is also easily accomplished. Except for CE all like inputs (including OE and PGM) of the parallel EPROM may be common. A TTL low level program pulse applied to an EPROM’s PGM input with CE at VIL and VPP at 12.75V will program that EPROM. A TTL high level CE input inhibits the other EPROM’s from being programmed. Output Disable The EPROM is placed in output disable by applying a TTL high signal to the OE input. When in output disable all circuitry is enabled, except the outputs are in a high impedance state (TRISTATE). Program Verify A verify should be performed on the programmed bits to determine whether they were correctly programmed. The verify may be performed with VPP at 12.75V. VPP must be at VCC, except during programming and program verify. Output OR-Tying Because the EPROM is usually used in larger memory arrays, Fairchild has provided a 2-line control function that accommodates this use of multiple memory connections. The 2-line control function allows for: AFTER PROGRAMMING Opaque labels should be placed over the EPROM window to prevent unintentional erasure. Covering the window will also prevent temporary functional failure due to the generation of photo currents. 1. the lowest possible memory power dissipation, and 2. complete assurance that output bus contention will not occur. To most efficiently use these two control lines, it is recommended that CE be decoded and used as the primary device selecting function, while OE be made a common connection to all devices in the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are in their low power standby modes and that the output pins are active only when data is desired from a particular memory device. MANUFACTURER’S IDENTIFICATION CODE The EPROM has a manufacturer’s identification code to aid in programming. When the device is inserted in an EPROM programmer socket, the programmer reads the code and then automatically calls up the specific programming algorithm for the part. This automatic programming control is only possible with programmers which have the capability of reading the code. Programming The Manufacturer’s Identification code, shown in Table 2, specifically identifies the manufacturer and device type. The code for the NM27C210 is “8FD6”, where “8F” designates that it is made by Fairchild Semiconductor, and “D6” designates a 1 Megabit (64K x 16) part. CAUTION: Exceeding 14V on the VPP or A9 pin will damage the EPROM. Initially, and after each erasure, all bits of the EPROM are in the “1’s” state. Data is introduced by selectively programming “0’s” into the desired bit locations. Although only “0’s” will be programmed, both “1’s” and “0’s” can be presented in the data word. The only way to change a “0” to a “1” is by ultraviolet light erasure. The code is accessed by applying 12V ±0.5V to address pin A9 . Addresses A1 –A8, A10 –A 15 , and all control pins are held at VIL. Address pin A0 is held at VIL for the manufacturer’s code, and held 7 www.fairchildsemi.com NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM Functional Description Lamps lose intensity as they age. When a lamp is changed, the distance has changed, or the lamp has aged, the system should be checked to make certain full erasure is occurring. Incomplete erasure will cause symptoms that can be misleading. Programmers, components, and even system designs have been erroneously suspected when incomplete erasure was the problem. at VIH for the device code. The code is read on the lower eight data pins, O0 –07 . Proper code access is only guaranteed at 25°C ± 5°C. ERASURE CHARACTERISTICS SYSTEM CONSIDERATION The erasure characteristics of the device are such that erasure begins to occur when exposed to light with wavelengths shorter than approximately 4000 Angstroms (Å). It should be noted that sunlight and certain types of fluorescent lamps have wavelengths in the 3000Å – 4000Å range. The power switching characteristics of EPROMs require careful decoupling of the devices. The supply current, ICC, has three segments that are of interest to the system designer: the standby current level, the active current level, and the transient current peaks that are produced by voltage transitions on input pins. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. The associated VCC transient voltage peaks can be suppressed by properly selected decoupling capacitors. It is recommended that at least a 0.1 µF ceramic capacitor be used on every device between VCC and GND. This should be a high frequency capacitor of low inherent inductance. In addition, at least a 4.7 µF bulk electrolytic capacitor should be used between VCC and GND for each eight devices. The bulk capacitor should be located near where the power supply is connected to the array. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of the PC board traces. The recommended erasure procedure for the EPROM is exposure to short wave ultraviolet light which has a wavelength of 2537Å. The integrated dose (i.e., UV intensity x exposure time) for erasure should be a minimum of 15W-sec/cm2 . The EPROM should be placed within 1 inch of the lamp tubes during erasure. Some lamps have a filter on their tubes which should be removed before erasure. An erasure system should be calibrated periodically. The distance from lamp to device should be maintained at one inch. The erasure time increases as the square of the distance from the lamp (if distance is doubled the erasure time increases by factor of 4). MODE SELECTION The modes of operation of the NM27C210 are listed in Table 1. A single 5V power supply is required in the read mode. All inputs are TTL levels except for VPP and A9 for device signature. TABLE 1. Modes Selection Pins CE OE PGM VPP VCC Outputs Read VIL VIL X (Note 16) X 5.0V DOUT Output Disable X VIH X X 5.0V High Z Standby VIH X X X 5.0V High Z Programming VIL VIH VIL 12.75V 6.25V DIN Program Verify VIL VIL VIH 12.75V 6.25V DOUT Program Inhibit VIH X X 12.75V 6.25V High Z Mode Note 16: X can be VIL or VIH. TABLE 2. Manufacturer’s Identification Code Pins A0 (21) A9 (31) O7 (12) O6 (13) O5 (14) O4 (15) O3 (16) O2 (17) O1 (18) O0 (19) Hex Data Manufacturer Code VIL 12V 1 0 0 0 1 1 1 1 8F Device Code VIH 12V 1 1 0 1 0 1 1 0 D6 8 www.fairchildsemi.com NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM Functional Description (Continued) 2.080 (52.03) MAX 40 21 0.530 (13.46) Max Ceramic 0.025 RAD (0.036) 0.550 (13.97) Max Glass 0.030-0.055 (0.762-1.397) RAD TYP 1 0.590-0.620 (14.985-15.748) 20 0.280±0.04 (7.112±0.102) UV Window Glass Sealant 0.005 MIN (0.127) 0.180 (4.572) MAX 0.225 (5.715) MAX 0.020-0.070 (0.508-1.778) 0.685 ( 86°-94° TYP 0.08-0.012 (0.203-0.305) 95° ±5° 0.125-0.200 0.150 (3.175-5.080) (3.810) MIN +0.025 -0.060 +0.635 17.40 -1.524 0.018±0.003 (.457±0.076) TYP 0.055-0.005 (1.397±0.127) TYP ( 0.100±0.010 (2.540±0.254) TYP 0.090 (2.489) MAX (Both Ends) 40-Lead EPROM Ceramic Dual-In-Line Package (Q) Order Number NM27C210QXXX Package Number J40BQ 2.043-2.070 (51.89-52.58) MAX 40 21 0.062 RAD (1.575) 0.550 ±0.005 (13.970±0.127) PIN No. 1 IDENT 1 0.580 (14.73) MIN 20 0.030 (0.762) MAX 0.600-0.620 (15.240-15.748) 0.050 (1.270) TYP 0.125-0.165 (3.175-4.191) 0.225 (5.715) 95° ± 5° 0.009-0.015 (0.229-0.381) 0.625 ( 86°-94° TYP +0.025 -0.015 +0.635 15.875 -0.381 ( 0.075±0.015 (1.905±0.381) 0.100±0.010 (2.540±0.254) 0.018±0.003 (0.457±0.076) 0.020 (0.508) MIN 0.125-0.140 (3.175-3.556) 40-Lead Molded Dual-In-Line Package (N) Order Number NM27C210NXXX Package Number N40A 9 www.fairchildsemi.com NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM Physical Dimensions inches (millimeters) unless otherwise noted +0.006 0.650 –0.000 +0.15 16.51 0 45°X 0.045 [1.14] PIN 1 IDENT 6 1 44 17 0.017 ±0.021 TYP [0.43 ±0.10] 0.045 45°X [1.14] 40 39 0.026–0.032 [0.66–0.81] TYP 0.610 ±0.020 [15.49 ±0.51] TYP Seating plane 17 29 18 0.500 TYP [12.70] 28 0.050 TYP [1.27] 0.020 MIN TYP [0.51] 0.690 ± 0.005 TYP [17.53 –0.13] 0.105 ±0.015 TYP [2.67 ±0.38] 0.165–0.180 TYP [4.19–4.57] 0.004 [0.10] 44-Lead Plastic Chip Carrier (V) Order Number NM27C210VXXX Package Number V44A Life Support Policy Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President of Fairchild Semiconductor Corporation. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. Fairchild Semiconductor Americas Customer Response Center Tel. 1-888-522-5372 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Fairchild Semiconductor Europe Fax: +44 (0) 1793-856858 Deutsch Tel: +49 (0) 8141-6102-0 English Tel: +44 (0) 1793-856856 Français Tel: +33 (0) 1-6930-3696 Italiano Tel: +39 (0) 2-249111-1 Fairchild Semiconductor Hong Kong 8/F, Room 808, Empire Centre 68 Mody Road, Tsimshatsui East Kowloon. Hong Kong Tel; +852-2722-8338 Fax: +852-2722-8383 Fairchild Semiconductor Japan Ltd. 4F, Natsume Bldg. 2-18-6, Yushima, Bunkyo-ku Tokyo, 113-0034 Japan Tel: 81-3-3818-8840 Fax: 81-3-3818-8841 Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications. 10 www.fairchildsemi.com NM27C210 1,048,576-Bit (64K x 16) High Performance CMOS EPROM Physical Dimensions inches (millimeters) unless otherwise noted