HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra-High-Speed Switching Applications Unit: mm z Small package z Low forward voltage : VF (3) = 0.92 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 2.2 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA IFSM 2 (*) A Power dissipation P 300 (*) mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to 125 °C Maximum (peak) reverse voltage Surge current (10 ms) ― JEDEC SC-74 JEITA 1-3K1A TOSHIBA Weight: 0.015 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single diode. Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C) Characteristic Symbol Test Circuit VF (1) ― VF (2) Min Typ. Max IF = 1 mA ― 0.61 ― ― IF = 10 mA ― 0.74 ― VF (3) ― IF = 100 mA ― 0.92 1.20 IR (1) ― VR = 30 V ― ― 0.1 IR (2) ― VR = 80 V ― ― 0.5 Total capacitance CT ― VR = 0, f = 1 MHz ― 2.2 4.0 pF Reverse recovery time trr ― IF = 10 mA (Fig. 1) ― 1.6 4.0 ns Forward voltage Reverse current Test Condition Unit V μA Start of commercial production 1992-05 1 2014-03-01 HN1D01F Pin Assignment (Top View) Marking Fig. 1. Reverse Recovery Time (trr) Test Circuit 2 2014-03-01 HN1D01F 3 2014-03-01 HN1D01F RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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