LM733/LM733C Differential Amplifier General Description Features The LM733/LM733C is a two-stage, differential input, differential output, wide-band video amplifier. The use of internal series-shunt feedback gives wide bandwidth with low phase distortion and high gain stability. Emitter-follower outputs provide a high current drive, low impedance capability. Its 120 MHz bandwidth and selectable gains of 10, 100 and 400, without need for frequency compensation, make it a very useful circuit for memory element drivers, pulse amplifiers, and wide band linear gain stages. The LM733 is specified for operation over the b55§ C to a 125§ C military temperature range. The LM733C is specified for operation over the 0§ C to a 70§ C temperature range. Y Y Y Y Y 120 MHz bandwidth 250 kX input resistance Selectable gains of 10, 100, 400 No frequency compensation High common mode rejection ratio at high frequencies Applications Y Y Y Y Y Magnetic tape systems Disk file memories Thin and thick film memories Woven and plated wire memories Wide band video amplifiers Connection Diagrams Metal Can Package Dual-In-Line Package TL/H/7866 – 2 Note: Pin 5 connected to case. Top View Order Number LM733H or LM733CH See NS Package Number H10D TL/H/7866 – 1 Top View Order Number LM733CN See NS Package Number N14A C1995 National Semiconductor Corporation TL/H/7866 RRD-B30M115/Printed in U. S. A. LM733/LM733C Differential Amplifier August 1989 Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Diffential Input Voltage g 5V Common Mode Input Voltage VCC Output Current g 6V g 8V 10 mA Power Dissipation (Note 1) 500 mW Junction Temperature a 150§ C Storage Temperature Range b 65§ C to a 150§ C Operating Temperature Range LM733 LM733C b 55§ C to a 125§ C 0§ C to a 70§ C Lead Temperature (Soldering, 10 sec.) 260§ C Electrical Characteristics (TA e 25§ C, unless otherwise specified, see test circuits, VS e g 6.0V) Characteristics Differential Voltage Gain Gain 1 (Note 2) Gain 2 (Note 3) Gain 3 (Note 4) Bandwidth Gain 1 Gain 2 Gain 3 Rise Time Gain 1 Gain 2 Gain 3 Propagation Delay Gain 1 Gain 2 Gain 3 Test Circuit LM733 Test Conditions 1 RL e 2 kX VOUT e 3 Vp-p LM733C Units Min Typ Max Min Typ Max 300 90 9.0 400 100 10 500 110 11 250 80 8.0 400 100 10 600 120 12 40 90 120 2 VOUT e 1 Vp-p 2 40 90 120 MHz MHz MHz 10.5 4.5 2.5 10 10.5 4.5 2.5 12 ns ns ns 7.5 6.0 3.6 10 7.5 6.0 3.6 10 ns ns ns VOUT e 1 Vp-p 2 Input Resistance Gain 1 Gain 2 Gain 3 20 Input Capacitance Gain 2 10 2.0 Input Offset Current Input Bias Current Input Noise Voltage 4.0 30 250 BW e 1 kHz to 10 MHz 4.0 30 250 kX kX kX 2.0 pF 0.4 3.0 0.4 5.0 9.0 20 9.0 30 12 12 mA mVrms Input Voltage Range 1 Common Mode Rejection Ratio Gain 2 Gain 2 1 VCM e g 1V f s 100 kHz VCM e g 1V f e 5 MHz 60 86 60 60 86 60 dB dB 50 70 50 70 dB Supply Voltage Rejection Ratio Gain 2 g 1.0 mA 1 DVS e g 0.5V Output Offset Voltage Gain 1 Gain 2 and 3 1 RL e % Output Common Mode Voltage 1 RL e % 1 RL e 2k Output Voltage Swing Output Sink Current Output Resistance Power Supply Current g 1.0 0.6 0.35 1.5 1.0 2.4 2.9 3.4 3.0 2.5 0.6 0.35 1.5 1.5 V V 2.4 2.9 3.4 V 4.0 3.0 4.0 3.6 2.5 3.6 20 1 RL e % 18 2 V mA 20 24 18 X 24 mA Electrical Characteristics (Continued) (The following specifications apply for b55§ C k TA k 125§ C for the LM733 and 0§ C k TA k 70§ C for the LM733C, VS e g 6.0V) Characteristics Test Circuit Test Conditions 1 RL e 2 kX, VOUT e 3 Vp-p Differential Voltage Gain Gain 1 Gain 2 Gain 3 LM733 Min Input Resistance Gain 2 200 80 8.0 Typ LM733C Max Min 600 120 12.0 250 80 8.0 8 Input Offset Current Typ 40 Input Voltage Range 1 Common Mode Rejection Ratio Gain 2 1 Supply Voltage Rejection Ratio Gain 2 mA 40 mA g1 V VCM e g 1V f s 100 kHz 50 50 dB 50 50 dB 1 DVS e g 0.5V 1 RL e % Output Voltage Swing 1 RL e 2k 1.5 1.2 Output Sink Current 1 kX 6 g1 Output Offset Voltage Gain 1 Gain 2 and 3 Power Supply Current 600 120 12.0 8 5 Input Bias Current Units Max RL e % 1.5 1.5 2.5 2.8 2.2 2.5 27 V V Vpp mA 27 mA Note 1: The maximum junction temperature of the LM733 is 150§ C, while that of the LM733C is 100§ C. For operation at elevated temperatures devices in the TO100 package must be derated based on a thermal resistance of 150§ C/W junction to ambient or 45§ C/W junction to case. Thermal resistance of the dual-in-line package is 90§ C/W. Note 2: Pins G1A and G1B connected together. Note 3: Pins G2A and G2B connected together. Note 4: Gain select pins open. Note 5: Refer to RETS733X drawing for specifications of LM733H version. Typical Performance Characteristics Pulse Response Pulse Response vs Temperature Pulse Response vs Supply Voltage Phase Shift vs Frequency Phase Shift vs Frequency Differential Overdrive Recovery Time TL/H/7866 – 6 3 Typical Performance Characteristics (Continued) Voltage Gain vs Frequency Gain vs Frequency Temperature Gain vs Frequency vs Supply Voltage Voltage Gain vs RADJ Voltage Gain vs Temperature Voltage Gain vs Supply Voltage Output Voltage Swing vs Frequency Supply Current, Output Voltage and Current Swing vs Supply Voltage Output Voltage Swing vs Load Resistance Common Mode Rejection Ratio vs Frequency Input Noise Voltage vs Source Resistance Supply Current and Input Resistance vs Temperature TL/H/7866 – 7 4 Test Circuits Test Circuit 1 Test Circuit 2 TL/H/7866 – 3 TL/H/7866 – 4 Voltage Gain Adjust Circuit TL/H/7866 – 5 VS e 6V, TA e 25§ C (Pin numbers apply to TO-5 package) Schematic Diagram TL/H/7866 – 8 5 LM733/LM733C Differential Amplifier Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM733H or LM733CH NS Package Number H10D Molded Dual-In-Line Package (N) Order Number LM733CN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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