BVDSS = 60 V RDS(on) typ = 11.5mΩ HRD50N06K / HRU50N06K ID = 40 A 60V N-Channel Trench MOSFET D-PAK FEATURES I-PAK 2 Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 11.5 mΩ (Typ.) @VGS=10V 1 1 2 3 3 HRD50N06K HRU50N06K 1.Gate 2. Drain 3. Source 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25℃ unless otherwise specified Parameter Drain-Source Voltage Value Units 60 V Drain Current – Continuous (TC = 25℃) 40 * A Drain Current – Continuous (TC = 100℃) 28 * A IDM Drain Current – Pulsed 140 * A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ EAR Repetitive Avalanche Energy (Note 1) 3.9 mJ Power Dissipation (TA = 25℃)* 3 W PD Power Dissipation (TC = 25℃) - Derate above 25℃ 39 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 0.26 W/℃ -55 to +175 ℃ 300 ℃ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 3.8 RθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A2,December 2014 HRD50N06K_HRU50N06K December 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.2 -- 3.8 V Static Drain-Source On-Resistance VGS = 10 V, ID = 15 A -- 11.5 14 mΩ Forward Transconductance VDS = 20, ID = 15 A -- 60 -- S VGS = 0 V, ID = 250 ㎂ 60 -- -- V VDS = 48 V, VGS = 0 V -- -- 1 ㎂ VDS = 48 V, TJ = 125℃ -- -- 100 ㎂ VGS = ±20 V, VDS = 0 V -- -- ±100 ㎁ -- 2150 -- ㎊ -- 200 -- ㎊ -- 130 -- ㎊ -- 1.6 -- Ω -- 30 -- ㎱ -- 20 -- ㎱ -- 120 -- ㎱ -- 25 -- ㎱ -- 40 -- nC -- 10 -- nC -- 13 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 30 V, ID = 15 A, RG = 6 Ω VDS = 48 V, ID = 15 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 40 ISM Pulsed Source-Drain Diode Forward Current -- -- 140 VSD Source-Drain Diode Forward Voltage IS = 15 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time -- 40 -- ㎱ Qrr Reverse Recovery Charge IS = 15 A, VGS = 0 V diF/dt = 100 A/μs -- 45 -- nC A Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=13A, VDD=25V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A2,December 2014 HRD50N06K_HRU50N06K Electrical Characteristics TJ=25 °C VGS 15 V 10 V 8V 7V 6V 5.5 V 5V Bottom : 4.5 V ID, Drain Current [A] ID, Drain Current [A] 100 Top : 102 101 175oC 10 25oC 1 * Notes : 1. VDS= 20V 2. 300us Pulse Test * Notes : 1. 300us Pulse Test 2. TC = 25oC 100 0.1 101 2 4 Figure 1. On Region Characteristics 8 100 IDR, Reverse Drain Current [A] VGS = 10V 16 12 10 175oC 25oC 1 * Notes : 1. VGS= 0V 2. 300us Pulse Test ∗ Note : TJ = 25oC 8 0 20 40 60 80 100 120 140 0.1 0.0 0.4 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2000 1500 * Note ; 1. VGS = 0 V 2. f = 1 MHz 1000 Coss 500 Crss 0 10-1 1.6 2.0 100 101 12 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 1.2 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 2500 0.8 VSD, Source-Drain Voltage [V] ID, Drain Current [A] 3000 10 Figure 2. Transfer Characteristics 20 RDS(ON) [mΩ], Drain-Source On-Resistance 6 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 10 8 6 4 2 VDS = 48V ID = 15A 0 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 50 ◎ SEMIHOW REV.A2,December 2014 HRD50N06K_HRU50N06K Typical Characteristics (continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ∗ Note : 1. VGS = 10 V 2. ID = 15 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 40 Operation in This Area is Limited by R DS(on) 100 µs ID, Drain Current [A] 30 1 ms 10 ms 101 DC 100 * Notes : 1. TC = 25 oC 20 10 2. TJ = 175 oC 3. Single Pulse 10-1 10-1 100 101 0 25 102 50 75 100 125 150 175 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 ZθJC(t), Thermal Response ID, Drain Current [A] 102 * Notes : 1. ZθJC(t) = 3.8 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0 10 0.2 0.1 0.05 10-1 0.02 0.01 10-5 PDM t1 single pulse 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A2,December 2014 HRD50N06K_HRU50N06K Typical Characteristics HRD50N06K_HRU50N06K Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A2,December 2014 HRD50N06K_HRU50N06K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A2,December 2014 HRD50N06K_HRU50N06K Package Dimension TO-252 (Ass’y GZSM) ◎ SEMIHOW REV.A2,December 2014 HRD50N06K_HRU50N06K Package Dimension TO-251 (Ass’y GZSM) ◎ SEMIHOW REV.A2,December 2014 HRD50N06K_HRU50N06K Package Dimension TO-251 (Ass’y CLD) ◎ SEMIHOW REV.A2,December 2014