ON NTMFS4846NT3G Power mosfet 30 v, 100 a, single n−channel, so−8 fl Datasheet

NTMFS4846N
Power MOSFET
30 V, 100 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO8 Package
These are Pb−Free Device
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V(BR)DSS
Applications
•
•
•
•
Refer to Application Note AND8195/D
CPU Power Delivery
DC−DC Converters
Low Side Switching
RDS(ON) MAX
3.4 mW @ 10 V
30 V
Symbol
D (5,6)
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±16
V
ID
20.3
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
Continuous Drain
Current RqJA v
10 sec
TA = 25°C
Power Dissipation
RqJA, t v 10 sec
TA = 25°C
PD
5.90
W
TA = 25°C
ID
12.7
A
Continuous Drain
Current RqJA
(Note 2)
S (1,2,3)
PD
2.25
W
N−CHANNEL MOSFET
ID
32.8
A
TA = 85°C
TA = 85°C
9.2
TA = 25°C
PD
0.89
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
100
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
55.5
W
TA = 25°C
IDM
200
A
TA = 25°C
IDmaxpkg
100
A
TJ,
TSTG
−55 to
+150
°C
IS
55
A
TC = 85°C
tp=10ms
Current limited by package
72
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4846N
AYWWG
G
D
D
D
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 37 Apk, L = 0.3 mH, RG = 25 W)
EAS
205
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 3
MARKING
DIAGRAM
23.7
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
G (4)
14.6
TA = 85°C
Steady
State
100 A
5.1 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
1
Device
Package
Shipping†
NTMFS4846NT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4846NT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Publication Order Number:
NTMFS4846N/D
NTMFS4846N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
2.25
Junction−to−Ambient – Steady State (Note 1)
RqJA
55.6
Junction−to−Ambient – Steady State (Note 2)
RqJA
140.8
Junction−to−Ambient − t v 10 sec
RqJA
21.2
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±16 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
1.45
1.8
5.2
VGS = 10 V to
11.5 V
ID = 30 A
2.5
ID = 15 A
2.4
VGS = 4.5 V
ID = 30 A
3.8
ID = 15 A
3.8
gFS
VDS = 1.5 V, ID = 30 A
mV/°C
3.4
5.1
85
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
3250
VGS = 0 V, f = 1 MHz, VDS = 12 V
562
CRSS
289
Total Gate Charge
QG(TOT)
21.8
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 4.5 V, VDS = 15 V; ID = 30 A
3.2
8.1
pF
32
nC
7.4
QG(TOT)
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
53
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
18.9
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
tf
34
24.6
9.4
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4846N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
td(ON)
Turn−On Delay Time
Rise Time
10.7
tr
Turn−Off Delay Time
td(OFF)
Fall Time
18.9
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
ns
34.2
tf
7.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.8
TJ = 125°C
0.66
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
1.0
V
21.6
11.4
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
ns
10.2
QRR
8.5
nC
Source Inductance
LS
0.65
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
0.005
TA = 25°C
1.84
0.5
1.4
2.2
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
180
160
10 V
VGS = 4.2 V
TJ = 25°C
140
5.0 V
3.8 V
120
4.5 V
3.6 V
100
3.4 V
80
3.2 V
60
3.0 V
40
20
0
140
4.0 V
160
ID, DRAIN CURRENT (A)
200
2.8 V
2.6 V
0
1
2
3
4
5
VDS ≥ 10 V
120
100
80
60
TJ = 125°C
40
TJ = 25°C
20
0
6
TJ = −55°C
0
1
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
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3
6
NTMFS4846N
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TYPICAL CHARACTERISTICS
0.010
ID = 30 A
TJ = 25°C
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
2
3
4
6
5
7
8
9
11
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.007
0.006
0.005
VGS = 4.5 V
0.004
VGS = 11.5 V
0.003
0.002
0.001
0
10
15
25
30
35
40
45
50
60
55
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.75
10,000
VGS = 0 V
IDSS, LEAKAGE (nA)
ID = 30 A
VGS = 10 V
1.50
1.25
TJ = 150°C
1000
1.00
TJ = 125°C
0.75
0.50
−50
−25
0
25
50
75
100
125
100
150
2
4
TJ, JUNCTION TEMPERATURE (°C)
VGS, GATE−TO−SOURCE VOLTAGE (V)
12
11
10
3000
2500
2000
TJ = 25°C
1500
Coss
1000
Crss
500
0
0
5
10
15
20
10
12
14
16
20
18
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Ciss
3500
8
25
20
QT
18
16
VGS
9
8
14
VDS
12
7
6
10
5
4
Qgs
8
Qgd
3
6
ID = 30 A
TJ = 25°C
2
1
0
0
5
10
15
20
25
30
35
40
45
4
2
50
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
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4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4000
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
C, CAPACITANCE (pF)
20
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
0
NTMFS4846N
TYPICAL CHARACTERISTICS
VDS = 15 V
ID = 15 A
VGS = 11.5 V
IS, SOURCE CURRENT (A)
1000
tf
t, TIME (ns)
100
td(off)
tr
td(on)
10
1
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
10
1 ms
10 ms
dc
1
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.4
RG, GATE RESISTANCE (W)
VGS = 20 V
Single Pulse
TC = 25°C
100
0.1
gFS (S)
100
VGS = 0 V
TJ = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
100
220
200
ID = 37 A
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE(°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
1000
100
100°C
125°C
Id (A)
ID, DRAIN CURRENT (A)
1000
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
25°C
10
VDS = 1.5 V
0
10
20
30
40
50
60
70
80
90
1
100
0.1
1
10
100
1000
DRAIN CURRENT (A)
PULSE WIDTH (ms)
Figure 13. gFS vs. Drain Current
Figure 14. Id vs. Pulse Width
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5
10,000
NTMFS4846N
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P (SO8 FL)
CASE 488AA−01
ISSUE C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
6
2X
0.20 C
5
4X
E1
1
2
3
q
E
2
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
8X
C A B
0.05
c
3X
4X
1.270
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
e/2
L
1
4
K
0.750
4X
1.000
0.965
1.330
2X
0.905
2X
E2
L1
6
G
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
0.51
−−−
−−−
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
SOLDERING FOOTPRINT*
DETAIL A
b
0.10
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
0.495
M
4.530
3.200
0.475
5
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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NTMFS4846N/D