April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Y Panel Sustain circuit X Power device High breakdown voltage High Intensity Sustain circuit High pressure Gas Low resistance High speed switching High Efficiency Addressing IC Optimum FET Low Cost TV/PC Signal PDP Signal processing Timing control Power supply IGBT Wide MOSFET line-ups High Speed IGBT Product Lineup Power MOSFET P/N H7N1005LS H7N1004LS H5N2301PF H5N2306PF H5N2305PF H5N2509P H5N2503P H5N3004P H5N3007LS H5N3003P H5N3504P VDSS (V) 100 100 230 230 230 250 250 300 300 300 350 Maximum Rating ID (A) 15 30 25 30 35 30 50 25 25 40 20 VGS (V) ±20 ±20 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 Electrical Characteristics VGS(off) RDS(on) typ(V) typ(mΩ） 2.0 85 2.0 25 3.5 65 3.5 48 3.5 30 3.5 53 3.5 40 3.5 75 2.8 120 3.5 60 3.5 100 Package LDPAK LDPAK TO-3PFM TO-3PFM TO-3PFM TO-3PFM TO-3P TO-3P LDPAK TO-3P TO-3P IGBT (High-speed type) P/N GN4030V5AB GN6030V5AB RJP3053DPP RJP3063DPP RJP3054DPP RJP3064DPP RJP3055DPP RJP3065DPP RJP4065DPP RJP2557DPK RJP3056DPK RJP3057DPK RJP3066DPK RJP3067DPK RJP4067DPK VCES (V) 400 600 300 300 300 300 300 300 400 270 300 300 300 300 400 Maximum Rating IC (A) 30 30 30 30 35 35 40 40 40 50 45 50 45 50 50 ©2010. Renesas Electronics Corporation, All rights reserved. VGE (V) ±20 ±20 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 Electrical Charcteristics VCE(sat) tf (V) typ (μS) ｔｙｐ 1.5 0.12 1.7 0.12 2.0 0.15 1.7 0.30 1.8 0.15 1.5 0.30 1.8 0.15 1.5 0.3 1.6 0.3 1.6 0.15 1.6 0.15 1.6 0.15 1.4 0.3 1.4 0.3 1.7 0.35 Package TO-220AB TO-220AB TO-220FN TO-220FN TO-220FN TO-220FN TO-220FN TO-220FN TO-220FN TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P April 2010 Renesas Electronics Power MOSFETs for Backlight Inverter Achieve Miniaturization and Higher Efficiency Features Low on resistance, High-speed switching Low Qg, Low Qgd Small package, Built-in 2 elements Merits High efficiency Mniaturization Example of Application Circuit (LCD TV, TFT Monitor, Note PC) Full Bridge Vin Push/Pull Half Bridge Vin Pch Pch HAT3029R(30V) HAT3031R(60V) Nch&Pch in 1PKG HAT3029R(30V) HAT3031R(60V) Nch&Pch in 1PKG HRV103A Vin Nch HAT2215R(80V) Dual Nch in 1PKG HRV103A Nch Nch Nch Vds(peak)=Vin + V(surge) Vds(peak)=2Vin + V(surge) Vds(peak)=Vin + V(surge) Product Lineup Max.Ratings No Type No RDS(on) (mΩ) VGS=10v max ｔｙｐ 13 16.5 18 23 24 30 15 19 20 25 Qgd (nc) 1.8 1.1 3.2 5.8 5.2 Qg （nC) 7.5 4.4 10 17 11.5 40 19 24 1.2 4.6 40 58 27 34 1.1 3 6.6 29 43 25 32 3.2 10 ±20 3.4 100 145 88 115 1.3 7.3 -60 ±20 6 60 85 40 50 8 37 11 HAT3029R 30 -30 ±20 +10/-20 6 -6 40 36 58 53 27 25 34 32 1.1 4.4 3.1 11.5 12 HAT3037R 45 -45 ±20 +10/-20 5 -3.8 55 95 75 130 44 75 55 95 0.9 1.5 3.0 4.9 13 HAT3010R 60 -60 ±20 ±20 6 -5 32 90 45 130 25 60 32 76 8 8 18 18 1 2 3 4 5 HAT2199R HAT2208R HAT2256R HAT1131R HAT1132R Single 6 HAT2276R 7 HAT2280R 8 HAT2275R Nch+Nch 9 HAT2215R 10 HAT1126R 14 HAT3031R 15 HAT3038R 16 HAT3021R 17 HAT3019R Pch+Pch Nch+Pch VGS=4.5v(8v) max ｔｙｐ 17 25 24 35 28 41 21.5 31 27.5 40 VDSS （V) 30 30 60 -30 -30 VGss （V) ±20 ±20 ±20 ±20 ±20 ID （A) 11 9 8 -9 -7 30 ±20 7.5 27 30 ±20 6 60 ±20 80 60 ±20 6.6 29 43 25 32 2.8 10 -60 60 -60 80 -80 100 -100 +10/-20 ±20 ±20 ±20 ±20 ±20 ±20 -3.4 5 -3.8 3.4 -2.6 3.5 -2.3 120 55 90 100 200 120 300 175 80 130 145 290 160 500 95 48 80 90 165 90 240 120 60 100 115 210 115 300 2.2 1.4 2.8 1.3 2.4 3.2 3.1 6.0 7.3 16 15 16 ©2010. Renesas Electronics Corporation, All rights reserved.