Analog Power AMD560C N & P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 28 @ VGS = 10V 60 35 @ VGS = 4.5V 80 @ VGS = -10V -60 105 @ VGS = -4.5V ID (A) 35 31 -20 -18 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 60 -60 VGS Gate-Source Voltage ±20 ±20 TC=25°C ID 35 -20 Continuous Drain Current a b I 140 -80 Pulsed Drain Current DM a TC=25°C IS 35 -20 Continuous Source Current (Diode Conduction) a T =25°C P 50 50 Power Dissipation C D TJ, Tstg TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range Units V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol Maximum RθJA 50 RθJC 3 c Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. © Preliminary 1 Publication Order Number: DS_AMD560C_1A Analog Power AMD560C Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Symbol Test Conditions Static VDS = VGS, ID = 250 uA VGS(th) VDS = VGS, ID = -250 uA IGSS VDS = 0 V, VGS = ±20 V VDS = 48 V, VGS = 0 V IDSS VDS = -48 V, VGS = 0 V VDS = 5 V, VGS = 10 V ID(on) VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 16 A rDS(on) VGS = -10 V, ID = -10 A VGS = -4.5 V, ID = -8 A VDS = 15 V, ID = 20 A gfs VDS = -15 V, ID = -10 A IS = 17 A, VGS = 0 V VSD IS = -10 A, VGS = 0 V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min (Nch) (Pch) (Nch) (Pch) (Nch) (Pch) (Nch) (Nch) (Pch) (Pch) (Nch) (Pch) (Nch) (Pch) Dynamic b N - Channel VDS = 30 V, VGS = 4.5 V, ID = 20 A N - Channel VDS = 30 V, RL = 1.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz P - Channel VDS = -30 V, VGS = 4.5 V, ID = -10 A P - Channel VDS = -30 V, RL = 3 Ω, ID = -10 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz 2 Typ Max 1 -1 ±100 1 -1 45 -25 Unit V V nA uA A A 24 30 85 105 15 11 0.89 -0.98 9 3 4 5 5 27 8 1422 84 79 10 5 4 5 4 30 11 1143 84 60 mΩ mΩ S S V V nC ns pF nC ns pF Publication Order Number: DS_AMD560C_1A Analog Power AMD560C Typical Electrical Characteristics - N-channel 0.1 20 0.08 3V ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.06 3.5V 0.04 4V 0.02 15 10 5 4V,4.5V,6V,8V,10V 0 0 0 2 4 ID-Drain Current (A) 0 6 1 3 4 2. Transfer Characteristics 100 0.2 TJ = 25°C ID = 20A TJ = 25°C IS - Source Current (A) 0.15 0.1 0.05 0 10 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 6 2000 F = 1MHz 10V,8V,6V,4.5V Ciss 4V 1500 Capacitance (pf) ID - Drain Current (A) 5 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current RDS(on) - On-Resistance(Ω) 2 4 3.5V 3V 2 1000 500 Coss 0 Crss 0 0 0.05 0.1 0.15 0.2 0.25 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AMD560C_1A Analog Power AMD560C Typical Electrical Characteristics - N-channel 2.5 VDS = 30V ID = 20A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 2 1.5 1 0.5 0 5 10 15 20 -50 -25 0 50 75 100 125 150 175 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 60 PEAK TRANSIENT POWER (W) 1000 10 uS 100 100 uS 1 mS ID Current (A) 25 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit 50 40 30 20 10 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 50 °C /W 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AMD560C_1A Analog Power AMD560C Typical Electrical Characteristics - P-channel 15 TJ = 25°C 0.15 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.2 3V 3.5V 0.1 4V,4.5V,6V,8V,10V 0.05 10 5 0 0 0 2 4 6 8 ID-Drain Current (A) 0 10 1 1. On-Resistance vs. Drain Current 4 5 6 10 TJ = 25°C ID = -10A TJ = 25°C 0.6 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2. Transfer Characteristics 0.8 0.4 0.2 0 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 1600 5 F = 1MHz 1400 10V,8V,6V,4.5V,4V 3.5V 4 Ciss 1200 3V Capacitance (pf) ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 3 2 1000 800 600 400 1 Coss 200 0 Crss 0 0 0.2 0.4 0.6 0.8 0 5 10 15 20 1000 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 6. Capacitance 5 Publication Order Number: DS_AMD560C_1A Analog Power AMD560C Typical Electrical Characteristics - P-channel 2.5 VDS = -30V ID = -10A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 2 1.5 1 0.5 0 0 5 10 15 20 -50 -25 25 25 50 75 100 125 150 175 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 60 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit Limited by RDS 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 50 °C /W 0.2 0.1 0.1 P(pk) 0.05 0.02 Single Pulse t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AMD560C_1A Analog Power AMD560C Package Information © Preliminary 7 Publication Order Number: DS_AMD560C_1A