CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 1/8 BVDSS : 500V RDS(ON) : 0.48Ω MTN13N50E3 ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=550V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Symbol Outline MTN13N50E3 TO-220 G：Gate D：Drain S：Source MTN13N50E3 G D S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C) Parameter Symbol Drain-Source Voltage (Note 1) VDS Gate-Source Voltage VGS Continuous Drain Current ID ID Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) IDM Single Pulse Avalanche Energy @ L=7.2mH, ID=12.2 Amps EAS Avalanche Current (Note 2) IAR Peak Diode Recovery dv/dt (Note 3) dv/dt Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) TL from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 TPKG seconds Pd Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Tj, Tstg Note : *1. TJ=+25℃ to +150℃. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD=10A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃. Limits Unit 500 ±30 13 8 52 250 13 3.0 V V A A A mJ A V/ns 300 °C 260 °C 195 1.72 -55~+150 W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN13N50E3 Symbol Rth,j-c Rth,j-a Value 0.64 62.5 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 3/8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS 500 BVDSS ∆BVDSS/∆Tj VGS(th) 2.0 *GFS IGSS IDSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - Typ. Max. Unit Test Conditions 550 0.5 15 0.38 4.0 ±100 20 200 0.48 V V V/°C V S nA μA μA Ω VGS=0, ID=250μA VGS=0, ID=250μA, Tj=150°C Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=13A VGS=±30 VDS =500V, VGS =0 VDS =400V, VGS =0, Tj=125°C VGS =10V, ID=7.8A 40 10 15 16 30 48 34 2222 180 17 - nC ID=13A, VDD=250V, VGS=10V ns VDD=250V, ID=13A, VGS=10V, RG=9.1Ω pF VGS=0V, VDS=25V, f=1MHz 392 3529 1.5 13 52 - V IS=13A, VGS=0V A VD=VG=0, VS=1.3V ns nC VGS=0, IF=13A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN13N50E3 MTN13N50E3 Package TO-220 (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 13N50 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 4/8 Characteristic Curves MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 5/8 Characteristic Curves(Cont.) MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 6/8 Test Circuit and Waveforms MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 7/8 Test Circuit and Waveforms(Cont.) MTN13N50E3 CYStek Product Specification Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-220AB Dimension A Marking: B D E C H Device Name K M I 13N50 □□□□ Date Code 3 G N 2 1 4 O P 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 DIM A B C D E G H Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN13N50E3 CYStek Product Specification