PD -94064
IRF7726
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
VDSS
RDS(on) max
ID
-30V
0.026@VGS = -10V
0.040@VGS = -4.5V
-7.0A
-6.0A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the ruggedized device design,
that International Rectifier is well known for, provides
the designer with an extremely efficient and reliable
device for battery and load management.
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.2mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
MICRO-8
T op V ie w
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-7.0
-5.7
-28
1.79
1.14
0.01
±20
-55 to +150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Max.
Units
70
°C/W
1
12/21/00
IRF7726
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.016
–––
–––
–––
–––
–––
–––
–––
–––
46
8.0
8.1
15
25
227
107
2204
341
220
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.026
VGS = -10V, ID = -7.0A
Ω
0.040
VGS = -4.5V, ID = -6.0A
-2.5
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -7.0A
-15
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
69
ID = -7.0A
–––
nC
VDS = -15V
–––
VGS = -10V
23
VDD = -15V, VGS = -10V
38
ID = -1.0A
ns
341
RG = 6.0Ω
161
RD = 15Ω
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.8
–––
–––
-28
–––
–––
–––
–––
35
32
-1.2
53
48
A
V
ns
µC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.8A, VGS = 0V
TJ = 25°C, I F = -1.8A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7726
100
VGS
-10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
100
VGS
-10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
10
1
-2.5V
0.1
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
10
-2.5V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
-VDS, Drain-to-Source Voltage (V)
TJ = 150 ° C
TJ = 25 ° C
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
0.1
2.0
100
Fig 2. Typical Output Characteristics
100
1
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
1
ID = -7.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7726
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2800
Ciss
2400
2000
1600
1200
800
C
oss
400
C
rss
16
-VGS , Gate-to-Source Voltage (V)
3200
10
10
8
6
4
2
0
100
0
10
100
40
50
60
OPERATION IN THIS AREA LIMITED
BY R
TJ = 25 ° C
DS(on)
TJ = 150 ° C
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
1
V GS = 0 V
3.0
4.5
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1.5
V DS =-24V
V DS =-15V
12
-VDS , Drain-to-Source Voltage (V)
0.1
0.0
14
0
1
ID = -7.0A
6.0
100us
10
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
0.1
10ms
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7726
8.0
VDS
-ID , Drain Current (A)
VGS
6.0
RD
D.U.T.
RG
+
VDD
VGS
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
0.0
10%
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.070
RDS ( on ) , Drain-to-Source On Resistance (Ω )
(
RDS(on), Drain-to -Source On Resistance Ω)
IRF7726
0.060
0.050
0.040
ID = -7.0A
0.030
0.020
0.010
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.120
0.080
VGS = -4.5V
0.040
VGS = -10V
0.000
0
10
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
20
30
40
50
60
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
D.U.T.
QGS
+VDS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7726
2.4
150
120
Power (W)
-VGS(th) ( V )
2.1
ID = -250µA
1.8
90
60
1.5
30
1.2
0
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7726
Package Outline
Micro-8 Outline
Dimensions are shown in millimeters (inches)
L E A D A S S IG N M E N T S
IN C H E S
D IM
D
M IL L IM E T E R S
M IN
M AX
M IN
MAX
A
.0 3 6
.0 4 4
0 .9 1
1 .1 1
A1
.0 0 4
.0 0 8
0 .1 0
0 .2 0
B
.0 1 0
.0 1 4
0 .2 5
0 .3 6
C
.0 0 5
.0 0 7
0 .1 3
0.18
D
.1 1 6
.1 2 0
2 .9 5
3.05
e
.0 2 5 6 B A S IC
0 .6 5 B A S IC
e1
.0 1 2 8 B A S IC
0 .3 3 B A S IC
E
.1 1 6
.1 2 0
2 .9 5
3 .0 5
H
.1 8 8
.1 9 8
4 .7 8
5 .0 3
e
L
.0 1 6
.0 2 6
0 .4 1
0 .6 6
6X
θ
0°
6°
0°
6°
3
-B -
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
8 7 6 5
3
S IN G L E
H
E
0 .2 5 (.0 1 0 )
-A -
M
A
M
DUAL
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S2 G 2
1 2 3 4
e1
R E C O M M E N D E D F O O T P R IN T
θ
1 .0 4
( .0 4 1 )
8X
A
-C B
0 .1 0 (.0 0 4 )
A 1
8X
0 .0 8 (.0 0 3 )
M
C A S
L
8X
B
S
0 .3 8
8X
( .0 1 5 )
C
8X
3 .2 0
( .1 2 6 )
4 .2 4
5 .2 8
( .1 6 7 ) ( .2 0 8 )
N O TE S :
1 D IM E N S IO N IN G A N D TO L E R A N C IN G P E R A N S I Y 14 .5M -1 982 .
0 .6 5 6 X
( .02 5 6 )
2 C O N TR O LL IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H .
Part Marking Information
Micro-8
D A T E C O D E (YW W ) A
Y = LA ST D IG IT O F YEA R
W W = W EE K
EX AM PLE : T H IS IS A N IR F 7501
45 1
75 01
P AR T N U M B ER
TOP
8
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IRF7726
Tape & Reel Information
Micro-8
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N O TE S :
1 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -541.
2 . CO N TR O LL IN G D IM E N SIO N : M ILL IM E TE R .
3 3 0 .0 0
( 1 2 .9 9 2 )
MAX.
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
Data and specifications subject to change without notice.
This product has been designed and qualified for the commercial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
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