MITSUBISHI MEMORY CARD STATIC RAM CARDS MF365A-LCDATXX MF365A-LSDATXX MF3129-LCDATXX MF3129-LSDATXX MF3257-LCDATXX MF3257-LSDATXX MF3513-LCDATXX MF3513-LSDATXX MF31M1-LCDATXX MF31M1-LSDATXX MF32M1-LCDATXX MF32M1-LSDATXX MF34M1-LCDATXX MF34M1-LSDATXX 8/16-bit Data Bus Static RAM Card Connector Type Two- piece 68-pin DESCRIPTION Mitsubishi’s Static RAM cards provide large memory capacities on a device approximately the size of a credit card(85.6mm×54mm×3.3mm). T h e c a r d s u s e a 8 / 1 6 bit data bus.The devices use a replaceable lithium battery to maintain data. Available in 64K byte-4M byte capacities, Mitsubishi’s Static RAM cards are available with a 68-pin, two-piece connector. FEATURES Uses TSOP (Thin Small Outline Package) to achieve very high memory density coupled with high reliability, without enlarging card size Electrostatic discharge protectiton to 15kV Buffered interface 68-pin connector 8-bit and 16-bit data width Write protect switch Battery voltage pin LS Type Wide Range operating temperature Ta= -20 to 70°C APPLICATIONS Office automation Computers Telecommunications Data Communications Industrial Consumer PRODUCT LIST Item Type name Memory Data Bus Attribute Auxialiary Memory Outline Main battery capacity width(bits) memory battery organization drawing holder 68P-003 Screw type MF365A-LCDATXX 64KB 256K bit SRAM×2 MF3129-LCDATXX 128KB 256K bit SRAM×4 MF3257-LCDATXX 256KB 1M bit SRAM×2 MF3513-LCDATXX 512KB 1M bit SRAM×4 MF31M1-LCDATXX 1MB 1M bit SRAM×8 MF32M1-LCDATXX 2MB MF34M1-LCDATXX 4MB MF365A-LSDATXX 64KB 256K bit SRAM×2 MF3129-LSDATXX 128KB 256K bit SRAM×4 MF3257-LSDATXX 256KB 1M bit SRAM×2 MF3513-LSDATXX 512KB 1M bit SRAM×4 MF31M1-LSDATXX 1MB 1M bit SRAM×8 MF32M1-LSDATXX 2MB 1 M b i t S R A M × 16 MF34M1-LSDATXX 4MB 4M bit SRAM×8 1 M b i t S R A M × 16 8/16 NO NO MITSUBISHI ELECTRIC 1/11 4M bit SRAM×8 MITSUBISHI MEMORY CARD STATIC RAM CARDS PIN ASSIGNMENT T w o - P i e c e T y p e (68-pin) Pin Pin Function Symbol No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Function Symbol No. GND D3 D4 D5 D6 D7 CE1# A10 OE# A11 A9 A8 A13 A14 WE# NC VCC NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 WP GND 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 Ground Data I/O Card enable 1 Address input Output enable Address input Write enable No connection Power supply voltage No connection A16(NC for 64KB type) Address input Data I/O Write protect Ground WRITE PROTECT MODE (WP) When the write protect switch is switched on, this card goes into a write protect mode that can read but not write data. In this mode, the WP pin becomes “H” level. At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin indicates “L” level). MITSUBISHI ELECTRIC 2/11 GND CD1 # D11 D12 D13 D14 D15 CE2# NC NC NC A17 A18 A19 A20 A21 VCC NC NC NC NC NC NC NC NC NC REG # BVD2 BVD1 D8 D9 D10 CD2 # GND Ground Card detect 1 Data I/O Card enable 2 No connection A17(NC for≤128KB types) A18(NC for≤256KB types) A19(NC for≤512KB types) A20(NC for≤1MB types) A21(NC for≤2MB types) Power supply voltage No connection No connection No connection REG function Battery voltage detect 2 Battery voltage detect 1 Data I/O Card detect 2 Ground Address input MITSUBISHI MEMORY CARD STATIC RAM CARDS BLOCK DIAGRAM (4MB) A21 A20 A0 ADDRESSDECODER A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 8 CS# ADDRESSBUS BUFFERS COMMON MEMORY 19 16 DATA-BUS BUFFERS 4Mbit SRAM×8 OE# WE# D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 CE1# CE2# MODE CONTROL LOGIC WE# OE# REG# WP# TO INTERNAL POWER WRITE PROTECT OFF VOLTAGE DETECTOR & POWER CONTROLLER ON CD1# CD2# VCC BVD2 BVD1 GND BR2325 FUNCTION TABLE Mode Standby Read A (16bit) common Write A (16bit) common Read B (8bit) common Write B (8bit) common Read C (8bit) common Write C (8bit) common Output disable Read A (16bit) attribute Read B (8bit) attribute Read C (8bit) attribute REG# CE1# CE2# OE# WE# A0 X H H H H H H H H X L L L L H L L L L L L H H X L L L H H L L H H H H L L X L H H L X L H L L H H L H H L L L L X H L H H L L H L H H H H H X X X L H L H X X X X L H X I/O (D15~D8) High-impedance Odd Byte Data out Odd Byte Data in High-impedance High-impedance High-impedance High-impedance Odd Byte Data out Odd Byte Data in High-impedance Data out (unknown) High-impedance High-impedance Data out (unknown) Note 1 : H=V I H , L=V I L , X=V I H or V I L MITSUBISHI ELECTRIC 3/11 I/O (D7~D0) High-impedance Even Byte Data out Even Byte Data in Even Byte Data out Odd Byte Data out Even Byte Data in Odd Byte Data in High-impedance High-impedance High-impedance Data out (FFh) Data out (FFh) Data out (unknown) High-impedance ICC Standby Active Active Active Active Active Active Active Active Active Active Active Active Active MITSUBISHI MEMORY CARD STATIC RAM CARDS ABSOLUTE MAXIMUM RATINGS Symbol VC C Vi Vo T opr1 Parameter Supply voltage Input voltage Output voltage Operating temperature 1 Conditions With respect to GND T opr2 Operating temperature 2 Data retention T stg Storage temperature Read, Write, Operation Ratings -0.3~6.0 -0.3~V C C +0.3 0~V C C LC series 0~70 LS series -20~70 LC series 0~70 LS series -20~70 -30~80 Unit V V V °C °C °C °C °C R E C O M M E N D E D O P E R A T I N G C O N D I T I O N S (LC series Ta= 0~55°C, unless otherwise noted) (LS series Ta=-20~70°C, unless otherwise noted) Limits Parameter Symbol Unit Min. Typ. Max. VC C V C C Supply voltage 4.50 5.0 5.25 V GND System ground 0 V VI H High input voltage 3.5 VC C V VI L Low input voltage 0 0.8 V MITSUBISHI ELECTRIC 4/11 MITSUBISHI MEMORY CARD STATIC RAM CARDS E L E C T R I C A L C H A R A C T E R I S T I C S ( L C s e r i e s T a = 0 ~ 5 5 ° C , V CC = 4 . 5 0 ~ 5 . 2 5 V , u n l e s s o t h e r w i s e n o t e d ) Symbol Parameter V OH V OL I IH I IL High output voltage Low output voltage High input current I OZH High output current in off state Low output current in off state I OZL Low input current I CC 1 • 1 Active supply current 1 I CC 1 • 2 Active supply current 2 I CC 2 • 1 Standby supply current 1 I CC 2 • 2 Standby supply current 2 VBDET1 Battery detect reference voltage 1¬ Battery detect reference voltage 2¬ VBDET2 ( L S s e r i e s T a = - 2 0 ~ 7 0 ° C , V CC = 4 . 5 0 ~ 5 . 2 5 V , u n l e s s o t h e r w i s e n o t e d ) Limits Test conditions Unit M i n . Typ. Max. I OH = - 1 . 0 m A 2.4 V I OL = 1 m A 0.4 V V I =V CC V 10 µA V I =0V CE1#, CE2#, WE#, OE#, REG# -10 -70 µA Other inputs -10 C E 1 # = C E 2 # = V IH o r O E # = V IH W E # = V IH , 10 µA V O =V CC C E 1 # = C E 2 # = V IH o r O E # = V IH W E # = V IH , -10 µA VO= 0 V 64KB~1MB 16bit 150 C E 1 # = C E 2 # = V IL 8bit 110 O t h e r i n p u t s V IH o r V IL 2MB 16bit 160 mA Outputs=open 8bit 120 Cycle time=250ns 4MB 16bit 200 8bit 160 64KB~1MB 16bit 140 CE1#=CE2# ≤ 0.2V 8bit 100 Other inputs ≤0.2V or 2MB 16bit 150 mA ≥ VCC-0.2V 8bit 110 Outputs=open 4MB 16bit 190 Cycle time=250ns 8bit 150 C E 1 # = C E 2 # = V IH 10 mA O t h e r i n p u t s = V IH o r V IL C E 1 # = C E 2 # ≥ V CC - 0 . 2 V 64KB,128KB 0.15 0.30 Other inputs ≤ 0.2V or 256KB~1MB 0.15 0.45 mA ≥ V CC - 0 . 2 V 2MB,4MB 0.30 0.65 Vcc=5V,Ta=25°C V 2.37 2.47 2.27 Vcc=5V,Ta=25°C Note 2 : Currents flowing into the IC are taken as positive (unsigned). 3 : Typical values are measured at V C C = 5 V , T a = 2 5 ° C . ¬ Pin asserted when battery voltage drops below specified level. MITSUBISHI ELECTRIC 5/11 2.55 2.65 2.75 V MITSUBISHI MEMORY CARD STATIC RAM CARDS CAPACITANCE Symbol Parameter CI Input capacitance Test conditions V I =GND, V I =25mVrms f=1 MH Z , T a = 2 5 ° C CO Output capacitance V O =GND, V O =25mVrms, f=1 MH Z , T a = 2 5 ° C Note 4 : These parameters are not 100% tested. Limits Typ. Min. Max. 45 30 45 20 64KB~2MB 4MB 64KB~2MB 4MB SWITCHING CHARACTERISTICS R e a d C y c l e (LC series Ta= 0~55°C, V C C =4.50~5.25V, unless otherwise noted) (LS series Ta=-20~70°C, V C C =4.50~5.25V, unless otherwise noted) Limits Min. Typ. Symbol Parameter Max. 200 Unit pF pF Unit tCR Read cycle time t a (A) Address access time 200 ns ns t a (CE) Card enable access time 200 ns t a (OE) Output enable accese time 100 ns t dis (CE) Output disable time (from CE#) 90 ns t dis (OE) Output disable time (from OE#) 90 ns t e n (CE) Output enable time (from CE#) 5 ns t e n (OE) Output enable time (from OE#) 5 ns t V (A) Data valid time (after address change) 0 ns TIMING REQUIREMENTS W r i t e C y c l e (LC series Ta= 0~55°C, V C C =4.50~5.25V, unless otherwise noted) (LS series Ta=-20~70°C, V C C =4.50~5.25V, unless otherwise noted) Symbol Parameter Min. Limits Typ. Max. Unit tCW Write cycle time 200 ns tw(WE) Write pulse width 120 ns tsu(A) Address set up time 20 ns tsu(A-WEH) Address set up time with respect to WE# high 140 ns tsu(CE-WEH) Card enable set up time with respect to WE# high 140 ns tsu(D-WEH) Data set up time with respect to WE# high 60 ns th(D) Data hold time 30 ns trec(WE) Write recovery time 30 tdis(WE) Output disable time (from WE#) tdis(OE) Output disable time (from OE#) ten(WE) Output enable time (from WE#) ten(OE) Output enable time (from OE#) tsu(OE-WE) OE# set up time with respect to WE# low th(OE-WE) OE# hold time with respect to WE# high 10 ns MITSUBISHI ELECTRIC 6/11 ns 90 ns 90 ns 5 ns 5 ns 10 ns MITSUBISHI MEMORY CARD STATIC RAM CARDS TIMING DIAGRAM Read Cycle An tCR VIH VIL ta(A) ta(CE) VIH tV(A) CE# VIL tdis(CE) ten(CE) ta(OE) VIH OE# VIL ten(OE) VOH Dm (DOUT) VOL Hi-Z tdis(OE) OUTPUT VALID WE#=“H” level REG#=“H” level Note 5 : Indicates the don’t care input W r i t e C y c l e (WE# control) tCW VIH An VIL tSU(CE-WEH) VIH CE# VIL tSU(A-WEH) VIH OE# VIL tW(WE) tSU(A) trec(WE) VIH WE# VIL tSU(OE-WE) Dm (DIN) tSU(D-WEH) VIH Hi-Z th(OE-WE) DATA INPUT STABLE VIL tdis(OE) VOH Dm (DOUT) VOL th(D) tdis(WE) Hi-Z REG#=“H” level MITSUBISHI ELECTRIC 7/11 ten(OE) ten(WE) MITSUBISHI MEMORY CARD STATIC RAM CARDS W r i t e C y c l e (CE# control) tCW VIH An VIL tSU(CE-WEH) tSU(A) trec(WE) VIH CE# VIL VIH WE# VIL tSU(D-WEH) Dm (DIN) VIH Hi-Z th(D) DATA INPUT STABLE VIL OE#=“H” level REG#=“H” level SWITCHING CHARACTERISTICS (Attribute) R e a d C y c l e (LC series Ta= 0~55°C, V C C =4.50~5.25V, unless otherwise noted) (LS series Ta=-20~70°C, V C C =4.50~5.25V, unless otherwise noted) Symbol tCRR ta(A)R ta(CE)R ta(OE)R tdis(CE)R tdis(OE)R ten(CE)R ten(OE)R tV(A)R Parameter Read cycle time Address access time Card enable access time Output enable access time Output disable time (from CE#) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time after address change MITSUBISHI ELECTRIC 8/11 Min. 300 Limits Typ. Max. 300 300 150 100 100 5 5 0 Unit ns ns ns ns ns ns ns ns ns MITSUBISHI MEMORY CARD STATIC RAM CARDS TIMING DIAGRAM (Attribute) Read Cycle An tCRR VIH VIL ta(A)R ta(CE)R VIH tV(A)R CE# VIL tdis(CE)R ten(CE)R ta(OE)R VIH OE# VIL ten(OE)R VOH Dm (DOUT) VOL Hi-Z tdis(OE)R OUTPUT VALID WE#=“H” level REG#=“L” level Note 6 : Test Conditions Input pulse levels : VI L =0.4V, VIH=4.0V Input p u l s e r i s e , f a l l t i m e : t r = t f = 1 0 n s Reference voltage Input : VI L = 0 . 8 V , V I H = 3 . 5 V Output : VOL=0.8V, VOH=3.0V (ten and tdis are measured when output voltage is± 500mV from steady state. ) Load : 100pF+1 TTL gate 5pF+1 TTL gate (at ten and tdis measuring) 7 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory) 8 : Don’t apply inverted phase signal externally when Dm pin is in output mode. 9 : CE# is indicated as follows: Read A/Write A : CE#=CE1#=CE2# Read B/Write B : CE#=CE1#, CE2#=“H” level Read C/Write C : CE#=CE2#, CE1#=“H” level MITSUBISHI ELECTRIC 9/11 MITSUBISHI MEMORY CARD STATIC RAM CARDS ELECTRICAL CHARACTERISTICS B A T T E R Y B A C K U P (LC series Ta= 0~55°C, unless otherwise noted) (LS series Ta=-20~70°C, unless otherwise noted) Symbol V BATT VI(CE) Parameter Back-up enable battery voltage Card enable voltage ICC(BUP) Battery back-up supply current ICC(BUP) Battery back-up supply current Test Conditions All pins open 2 . 4 V ≤V CC ≤5 . 2 5 V 0V≤V CC <2 . 4 V 64KB 128KB All pins open, 256KB V BATT = 3 V , 512KB Ta=25°C 1MB 2MB 4MB 64KB 128KB 256KB All pins open, 512KB V BATT = 3 V 1MB 2MB 4MB Limits Typ. Min. 2.6 2.4 V CC - 0 . 1 V CC Max. V CC+0. 1 3 5 3 5 9 17 9 40 70 100 200 400 800 400 Unit V V µA µA T I M I N G R E Q U I R E M E N T S (LC series Ta= 0~55°C, unless otherwise noted) (LS series Ta=-20~70°C, unless otherwise noted) Symbol tpr tpf tsu(VCC) trec(VCC) Parameter Power supply rise time Power supply fall time Set up time at power on Recovery time at power off MITSUBISHI ELECTRIC 10/11 Min. 0.1 3 20 1000 Limits Typ. Max. 300 300 Unit ms ms ms ns MITSUBISHI MEMORY CARD STATIC RAM CARDS CARD INSERTION/REMOVAL TIMING DIAGRAM V CC M I N m e a n s M i n i m u m O p e r a t i n g V o l t a g e = 4 . 7 5 V . VCC VCC MIN trec(VCC) CE1#, CE2# tpf 90% tpr 90% VIH VIH 10% VCC MIN tsu(VCC) 10% Note 10: When the card is holding valuable data, the battery must not be removed unless V C C is present. BATTERY SPECIFICATIONS A replaceable battery (type BR2325) with a capacity of 165mAH is used: Estimated battery life when the card is left continuously. MF365A-LC/LSDATXX MF3129-LC/LSDATXX MF3257-LC/LSDATXX MF3513-LC/LSDATXX MF31M1-LC/LSDATXX MF32M1-LC/LSDATXX MF34M1-LC/LSDATXX Conditions Temperature : 25 ° C Humidity : 60%RH 5.9years 3.6years 5.9years 3.6years 2.0years 1.1years 2.0years MITSUBISHI ELECTRIC 11/11 VCC CE1, CE2