Seme LAB BDY26A High current npn silicon transistor Datasheet

BDY26A
MECHANICAL DATA
HIGH CURRENT
NPN SILICON TRANSISTOR
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
2
•
•
•
•
•
22.23
(0.875)
max.
1
FEATURES
1.52 (0.06)
3.43 (0.135)
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
HIGH SWITCHING CURRENTS
HIGH RELIABILITY
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
JAN LEVEL SCREENING OPTIONS
3
(case)
APPLICATIONS
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
•
•
SWITCHING REGULATORS
LINEAR APPLICATIONS
TO3 (TO204AA)
Pin 1 = Base
Pin 2 = Emitter
Case = Collector
ABSOLUTE MAXIMUM RATINGS
TCASE = 25°C unless otherwise stated
VCBO
VCEO
VEBO
IC
IB
Ptot
TJ
Tstg
Collector - Base Voltage
Collector - Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
Total Power Dissipation at
Tcase = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature
300V
180V
10V
6A
3A
50W
0.29 W/°C
200°C
-65 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
DOC 7654, ISSUE 1
BDY26A
THERMAL CHARACTERISTICS
Rth j-case
Max
3.5
°C/W
Min. Typ. Max.
Unit
Thermal resistance to case
Unit
ELECTRICAL CHARACTERISTICS (Tcase=25°C unless otherwise stated)
Parameter
Test Conditions
ICEO
Collector Cut-Off Current
VCE = 140V
IB = 0
1.0
ICES
Collector Cut-Off Current
VCE = 180V
VBE = 0
1.0
IEBO
Emitter Cut-Off Current
VEB = 10V
IC = 0
1.0
V(BR)CEO*
Collector-Emitter Breakdown Voltage
IC = 50mA
IB = 0
V(BR)CBO*
Collector-Base Breakdown Voltage
IC = 3mA
VCE(sat)*
Collector-Emitter Saturation Voltage
IC = 2.0A
IB = 0.25A
0.6
VBE(sat)*
Base-Emitter Saturation Voltage
IC = 2.0A
IB = 0.25A
1.2
hFE*
Forward-current transfer ratio
IC = 1.0A
VCE = 4.0V
IC = 2.0A
VCE = 4.0V
IE = 0
VCB = 10V
mA
180
300
V
55
15
20
45
65
120
DYNAMIC CHARACTERISTICS
Cobo
Output Capacitance
FT
Transition Frequency
Ton
Turn-on time
IC= 5.0A
IB1= 1.0A
Toff
Turn-off time
IC= 5.0A
IB1=-IB2= 1.0A
f = 1.0MHz
IC = 0.5A
VCE = 15V
f = 10.0MHz
10
pF
MHz
1.0
2
µs
* Pulse test tp = 300µs, δ < 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
DOC 7654, ISSUE 1
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