DCR604SE DCR604SE Phase Control Thyristor Advance Information Supersedes January 2000 version, DS4450-4.0 DS4450-5.0 July 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VDRM 2100V ■ High Surge Capability IT(AV) 706A ITSM 8100A ■ High Mean Current ■ Fatigue Free dVdt* 1000V/µs dI/dt APPLICATIONS 700A/µs *Higher dV/dt selections available ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control VOLTAGE RATINGS Type Number DCR604SE21 DCR604SE20 DCR604SE19 DCR604SE18 DCR604SE17 Repetitive Peak Voltages VDRM VRRM V Conditions 2100 2000 1900 1800 1700 Tvj = 0˚ to 125˚C, IDRM = IRRM = 30mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: E See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR604SE20 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DCR604SE CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Symbol Parameter Conditions Max. Units 706 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 1109 A Continuous (direct) on-state current - 995 A 487 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 766 A Continuous (direct) on-state current - 646 A Conditions Max. Units 562 A IT Half wave resistive load CURRENT RATINGS Tcase = 80˚C unless stated otherwise. Symbol Parameter Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 882 A Continuous (direct) on-state current - 770 A 380 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 595 A Continuous (direct) on-state current - 480 A IT Half wave resistive load 2/8 www.dynexsemi.com DCR604SE SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 6.5 kA VR = 50% VRRM - 1/4 sine 0.21 x 106 A2s 10ms half sine; Tcase = 125oC 8.1 kA VR = 0 0.33 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.041 o Anode dc - 0.074 o Cathode dc - 0.092 o C/W Double side - 0.018 o C/W Single side - 0.036 o C/W On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range –55 125 o Clamping force 7.2 8.8 kN Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 8.0kN with mounting compound C Virtual junction temperature C C 3/8 www.dynexsemi.com DCR604SE DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 30 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. Gate open circuit. - 1000 V/µs - 350 A/µs Rate of rise of on-state current From 67% VDRM to 1100A Gate source 20V, 20Ω tr ≤ 0.5µs, Tj = 125oC Repetitive 50Hz dI/dt Non-repetitive - 700 A/µs IRRM/IDRM Threshold voltage At Tvj = 125oC - 0.93 V rT On-state slope resistance At Tvj = 125oC - 0.667 mΩ tgd Delay time VD = 67% VDRM, Gate source 10V, 5Ω tr = 0.5µs, Tj = 25oC - 1.5 µs IL Latching current Tj = 25oC, VD = 5V - 500 mA IH Holding current Tj = 25oC, VD = 5V - 70 mA tq Turn-off time IT = 500A, tp = 1ms, Tj = 125˚C, VR = 50V, dIRR/dt = 20A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear 300 400 µs Max. Units VT(TO) GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 150 mA VGD Gate non-trigger voltage At 67% VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table, gate characteristics curve 100 W PG(AV) Mean gate power 5 W 4/8 www.dynexsemi.com DCR604SE CURVES 1200 1600 Measured under pulse conditions Tj = 125˚C Half wave 3 phase 1400 1000 Instantaneous on-state current, IT - (A) d.c. 6 phase Mean power dissipation - (W) 1200 1000 800 600 800 600 400 400 200 200 0 0.5 1.0 1.5 Instantaneous on-state voltage, VT - (V) 2.0 Fig.2 Maximum (limit) on-state characteristics 00 200 400 600 Mean on-state current, IT(AV) - (A) 800 Fig.3 Dissipation curves VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT Where A = 1.086551 B = –0.173031 C = –3.307461 x 10–5 D = 0.056345 these values are valid for Tj = 125˚C for IT 500A to 1600A 5/8 www.dynexsemi.com DCR604SE 100 Gate trigger voltage, VGT - (V) IT = 500A 1000 Pulse width µs 20 25 100 500 1ms 10ms Frequency Hz 400 50 100 100 100 100 100 100 100 100 100 100 25 100 100 12.5 100 50 10 - 10 Up lim per it 9 5% 1 tp 100 0.1 VGD 0.25xIRM dIT/dt IRM 1.0 10 Rate of decay of on-state current, dIT/dt - (A/µs) e L ow 0.1 0.001 100 it 5% 0.01 Region of certain triggering 0.1 1 10 IFGM Gate trigger current, IGT - (A) Fig.4 Recovered charge 0.1 r lim Tj = 125˚C IT QR 0W 10 W 50 IT = 1500A Table gives pulse power PGM in Watts W 20 W 10 5W Recovered charge, QR - (µC) Conditions: Tj = 125˚C VR = 50V tp = 1ms Tj = 25˚C Tj = -40˚C 10000 Fig.5 Gate characteristics 20 Anode side cooled 0.01 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.001 0.001 0.01 0.1 Time - (s) Effective thermal resistance Junction to case ˚C/W Double side 0.041 0.044 0.051 0.061 Anode side 0.074 0.077 0.084 0.093 1.0 10 Peak half sine wave on-state current - (kA) Double side cooled 15 225 10 200 I2t 175 5 0 1 10 ms 1 2 3 45 10 I2t value - (A2s x 103) Thermal Impedance - junction to case - (˚C/W) I2t = Î2 x t 2 150 20 30 50 Cycles at 50Hz Duration Fig.6 Maximum (limit) transient thermal impedance junction to case Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase 125˚C) 6/8 www.dynexsemi.com DCR604SE PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 30˚ 15˚ 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode tab Cathode Ø42max Ø25nom. 15 14 Ø1.5 Gate Ø25nom. Anode Nominal weight: 82g Clamping force: 8kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: E 7/8 www.dynexsemi.com DCR604SE POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4450-5 Issue No. 5.0 July 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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