FastIRFET™ IRFHM4226TRPbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) 25 V 2.4 m 3.3 Qg (typical) 16 nC ID (@TC (Bottom) = 25°C) 60 A PQFN 3.3 x 3.3 mm Applications Control or Synchronous MOSFET for high frequency buck converters Features Low RDSon (<2.4m) Low Charge (typical 16nC) Low Thermal Resistance to PCB (<3.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1 Base part number Package Type IRFHM4226TRPbF PQFN 3.3mm x 3.3mm Benefits Lower Conduction Losses Low Switching Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM4226TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 28 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 105 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 67 ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation 2.7 PD @TC(Bottom) = 25°C Power Dissipation 39 TJ Operating Junction and TSTG Storage Temperature Range Linear Derating Factor A 60 420 0.021 -55 to + 150 W W/°C °C Notes through are on page 9 1 2016-2-26 IRFHM4226TRPbF Static @ TJ = 25°C (unless otherwise specified) gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Min. 25 ––– ––– ––– 1.1 ––– ––– ––– ––– 136 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 1.7 2.6 1.6 -5.7 ––– ––– ––– ––– 32 16 3.6 2.0 5.8 4.6 7.8 15 1.1 11 Max. ––– ––– 2.4 3.3 2.1 ––– 1.0 100 -100 ––– ––– 24 ––– ––– ––– ––– ––– ––– ––– ––– tr td(off) tf Ciss Coss Crss Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– 35 14 8.1 2000 570 150 ––– ––– ––– ––– ––– ––– BVDSS BVDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 30A m VGS = 4.5V, ID = 30A V VDS = VGS, ID = 50µA mV/°C µA VDS = 20V, VGS = 0V VGS = 20V nA VGS = -20V S VDS = 10V, ID = 30A nC VGS = 10V, VDS = 13V, ID = 30A nC nC VDS = 13V VGS = 4.5V ID = 30A VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ns pF ID = 30A RG=1.8 VGS = 0V VDS = 13V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy Typ. ––– Max. 124 Units mJ IAR Avalanche Current ––– 30 A Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. Typ. Max. ––– ––– 60 ––– ––– 420 ––– ––– ––– ––– 16 28 1.0 24 42 Units Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V TJ = 25°C, IF = 30A, VDD = 13V di/dt = 450A/µs D A G S V ns nC Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Typ. ––– RJC (Top) Junction-to-Case ––– 35 RJA Junction-to-Ambient ––– 47 RJA (<10s) Junction-to-Ambient ––– 30 2 Max. 3.2 Units °C/W 2016-2-26 IRFHM4226TRPbF 1000 1000 VGS 10V 5.5V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 10 2.75V BOTTOM 2.75V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 100 TJ = 150°C 10 TJ = 25°C 1 VDS = 10V 60µs PULSE WIDTH ID = 30A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 0.1 1.0 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 7.0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = Cgs + C gd , Cds SHORTED C rss = Cgd VGS, Gate-to-Source Voltage (V) ID= 30A C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Crss 12.0 VDS= 20V 10.0 VDS= 13V VDS= 5.0V 8.0 6.0 4.0 2.0 0.0 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 5.5V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2016-2-26 IRFHM4226TRPbF 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 100 TJ = 25°C 10 1 100 100µsec 10 Limited by Package 1msec 1 10msec 0.1 VGS = 0V 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1.8 1 10 100 VDS , Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2.8 120 VGS(th), Gate threshold Voltage (V) Limited by package 100 ID, Drain Current (A) DC Tc = 25°C Tj = 150°C Single Pulse 80 60 40 20 2.4 2.0 1.6 1.2 ID = 50µA ID = 250µA ID = 1.0mA ID = 10mA 0.8 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TC , Case Temperature (°C) Fig 10. Threshold Voltage Vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( ZthJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2016-2-26 8.0 600 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m) IRFHM4226TRPbF ID = 30A 6.0 TJ = 125°C 4.0 2.0 TJ = 25°C 0.0 ID 5.1A 7.2A BOTTOM 30A TOP 500 400 300 200 100 0 2 4 6 8 10 12 14 16 18 20 25 100 125 150 Fig 13. Maximum Avalanche Energy vs. Drain Current 100 Avalanche Current (A) 75 Starting TJ , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On– Resistance vs. Gate Voltage 50 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Single Avalanche Current vs. pulse Width 5 2016-2-26 IRFHM4226TRPbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 16a. Unclamped Inductive Test Circuit Fig 17a. Switching Time Test Circuit I AS Fig 16b. Unclamped Inductive Waveforms Fig 17b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 Qgd Qgodr Fig 19. Gate Charge Waveform 2016-2-26 IRFHM4226TRPbF PQFN 3.3 x 3.3 Outline “B” Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3 x 3.3 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX ?YWW? XXXXX PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 2016-2-26 IRFHM4226TRPbF PQFN 3.3 x 3.3 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimension are nominal Package Type Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 3.3 X 3.3 PQFN 13 4000 12.4 3.600 3.600 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2016-2-26 IRFHM4226TRPbF Qualification Information† Moisture Sensitivity Level RoHS Compliant PQFN 3.3mm x 3.3mm MSL1 (per JEDEC J-STD-020D††) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.275mH, RG = 50, IAS = 30A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 60A by source bonding technology. Pulse drain current is limited at 240A by source bonding technology. 9 2016-2-26 IRFHM4226TRPbF Revision History Date Comments 08/07/2013 Added "FastIRFET™" above part number, on page1 12/5/2013 Updated fig.14, limit curve to 40A package limitation current, on page 5 6/3/2014 Updated IC @ TC 25C from “40A” to “60A” on page 1, 2 Updated schematic on page 1 Updated fig 8 and 9 on page 4 Updated fig14 on page 5 Updated Tape and Reel on page 8 Updated RDS(on) from 2.2m to 2.4m in accordance with PCN#188, For backwards compatibility, datasheet thermal calculations remain unchanged (RDS(on) = 2.2 m) Updated datasheet with corporate template Removed package outline “Punched Version” on page 7. 12/09/2014 2/26/2016 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2016-2-26