WILLAS MMBTH10LT1 Vhf/uhf transistor Datasheet

WILLAS
FM120-M+
THRU
MMBTH10LT1
VHF/UHF
Transistors
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
reversethat
leakage
currentofand
thermal
resistance.
compliance
with RoHS requirements.
We declare
the material
product
zbetter
SOD-123H
profilepackage
surface mounted
application in order to
• Low
Pb-Free
is available
optimize board space.
RoHS product for packing code suffix ”G”
• Low power loss, high efficiency.
Halogen
free
product low
for packing
suffix
“H”
current
capability,
forward code
voltage
drop.
• High
surge
capability.
• High
Ordering Information
• Guardring for overvoltage protection.
Device
Marking
Shipping
switching.
• Ultra high-speed
epitaxial planar chip,
metal silicon3000/Tape&Reel
junction.
• Silicon
MMBTH10LT1
3EM
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MAXIMUM
RATINGS
MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Rating
Symbol
Halogen free
product for packing code
suffix "H"
Mechanical
Collector–Emitterdata
Voltage
V
CEO
Value
Unit
25
Vdc
SOT–23
0.040(1.0)
Vdc
0.024(0.6)
: UL94-V0 Voltage
rated flame retardant
• Epoxy
Collector–Base
V CBO
30
:
Molded
plastic,
SOD-123H
• Case
Emitter–Base Voltage
V EBO
3.0
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Vdc
3
COLLECTOR
0.031(0.8) Typ.
0.031(0.8) Typ.
1
BASE
2026
THERMAL Method
CHARACTERISTICS
• Polarity : Indicated by cathode band
Characteristic
Position : Any
• Mounting
Total Device Dissipation FR– 5 Board, (1)
• Weight
: Approximated 0.011 gram
TA = 25°C
Dimensions in inches and (millimeters)
Symbol
Max
Unit
PD
225
mW
2
EMITTER
1.8
mW/°C
Derate above 25°C
MAXIMUM
RATINGS
AND
ELECTRICAL
CHARACTERISTICS
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Ratings at 25℃
temperature unless otherwise specified.
Totalambient
Device Dissipation
300
mW
PD
Single phaseAlumina
half wave,
60Hz, resistive
of inductive load.
Substrate,
(2) TA = 25°C
2.4
mW/°C
For capacitive
load,above
derate25°C
current by 20%
Derate
Thermal Resistance,
RθJA FM130-MH FM140-MH
417
°C/W FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
FM150-MH
RATINGS Junction to AmbientSYMBOL FM120-MH
TJ , Tstg 13 –55 to14
+150 15 °C
Marking CodeJunction and Storage Temperature
12
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
MaximumDEVICE
RMS Voltage
MARKING
Maximum DC Blocking Voltage
MMBTH10LT1= 3EM
VRMS
14
21
28
35
42
56
70
105
140
Volts
VDC
20
30
40
50
60
80
100
150
200
Volts
IO
Maximum Average Forward Rectified Current
1.0
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Typical Thermal
Resistance (Note 2)
OFF CHARACTERISTICS
RΘJA
Characteristic
superimposed on rated load (JEDEC
method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Collector–Emitter Breakdown Voltage
(I = 1.0 mAdc, I B= 0 )
C
Storage Temperature
Range
Collector–Base Breakdown Voltage
µAdc , I E = 0)
(I C = 100
CHARACTERISTICS
Emitter–Base
Maximum Forward
Voltage atBreakdown
1.0A DC Voltage
µAdc ,Current
I C= 0) at @T A=25℃
(I E = 10
Maximum Average
Reverse
Collector
Cutoff
Rated DC Blocking Voltage Current @T A=125℃
NOTES:
Symbol
Min
Typ
Amps
30
Max
40
120
—
-55 to +125 25
V (BR)CEO
—
V (BR)CBO
- 65 to +175
—
—
TSTG
30
℃/W
PF
Vdcto +150
-55
℃
℃
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
IR
V (BR)EBO
0.50 3.0
—
0.70
—
0.85
Vdc
—
—
10100
nAdc
I CBO
—
—
100
uAdc
Emitter Cutoff Current
( V EB = 2.0Vdc , I C= 0 )
I EBO
—
—
100
nAdc
Emitter Cutoff Current
I EBO
—
—
10
uAdc
( V CB = 25Vdc , I E = 0 )
Collector Cutoff Current
1- Measured at( 1VMHZ= and
applied
30Vdc
, I reverse
= 0 ) voltage of 4.0 VDC.
0.9
0.92
0.5
I CBO
CB
Amps
Unit
Volts
mAmp
E
2- Thermal Resistance From Junction to Ambient
(V
= 3.0Vdc , I = 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBTH10LT1
VHF/UHF
Transistors
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
ELECTRICAL
(T A = 25°C unless otherwise noted) (Continued)
optimize boardCHARACTERISTICS
space.
• Low power loss, high efficiency.
Characteristic
HighCHARACTERISTICS
current capability, low forward voltage drop.
• ON
capability.
• High surge
DC Current
Gain
for overvoltage protection.
• Guardring
(I C = 4.0 mAdc, V CE = 10 Vdc)
• Ultra high-speed switching.
Collector–Emitter Saturation Voltage
• Silicon epitaxial planar chip, metal silicon junction.
(I C = 4.0mAdc, I B = 0.4 mAdc)
• Lead-free parts meet environmental standards of
•
Symbol
Min
Typ
hFE
60
—
Base–Emitter
On Voltage
MIL-STD-19500
/228
V CEcode
= 10Vdc)
(I C = 4.0mAdc,
RoHS product
for packing
suffix "G"
Halogen free product for packing code suffix "H"
Unit
Max
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
—
0.071(1.8)
0.056(1.4)
VCE(sat)
—
—
0.5
V BE
—
—
0.95
650
—
—
—
0.7
pF
—
0.65
pF
—
9.0
ps
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Mechanical data
Current Gain–Bandwidth Product
fT
• Epoxy : UL94-V0 rated flame retardant
(V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz)
Molded plastic,
SOD-123H
• Case : Collector
–Base Capacitance
C cb,
• Terminals
terminals,
= 10 Vdc,
I E = 0, f solderable
= 1.0 MHz) per MIL-STD-750
(V CB:Plated
•
•
•
Method
2026
Collector
–Base
Feedback Capacitance
(V
=
10
Vdc,
I
1.0 MHz)
CB
E = 0, f = band
Polarity : Indicated
by cathode
Collector Base Time Constant
Mounting Position : Any
( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz)
Weight : Approximated 0.011 gram
C
0.031(0.8) Typ.
—
—
rb
rb’ C C
0.040(1.0)
0.024(0.6)
MHz
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
—
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
IO
1.0
Amps
IFSM
30
Amps
RΘJA
40
120
℃/W
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
CHARACTERISTICS
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
-55 to +125
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
Volts
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBTH10LT1
VHF/UHF
Transistors
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
TYPICAL CHARACTERISTICS
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
COMMON–BASE
voltage drop. y PARAMETERS versus FREQUENCY
• High current capability, low forward
(V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C)
• High surge capability.
• Guardring for overvoltage protection.
yib , INPUT ADMITTANCE
• Ultra high-speed switching.
• Silicon80epitaxial planar chip, metal silicon junction.
0
• Lead-free parts meet environmental standards of
g ib
y ib , INPUT ADMITTANCE(mmhos)
MIL-STD-19500
/228
70
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
–10
• RoHS product for packing code suffix "G"
60
Halogen free product for packing code suffix "H"
–20
jb ib (mmhos)
50
Mechanical
data
–b ib
• Epoxy40: UL94-V0 rated flame retardant
• Case :30Molded plastic, SOD-123H
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
20
–30
–40
1000MHz
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
700
400
Method 2026
200
–50
10
• Polarity : Indicated by cathode band
0 Position : Any
• Mounting
100
200
300
400
• Weight : Approximated 0.011 gram
100
Dimensions in inches and (millimeters)
500
700
–60
0
1000
10
20
30
f, FREQUENCY (MHz)
40
50
60
70
80
g ib (mmhos)
1. Rectangular
Form
MAXIMUMFigure
RATINGS
AND ELECTRICAL
CHARACTERISTICS
Figure 2. Polar Form
y ib , FORWARD TRANSFER ADMITTANCE (mmhos)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
y fb , FORWARD TRANSFER ADMITTANCE
For capacitive load, derate current by 20%
Marking Code
70
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
b fb
60
VRRM
Maximum Recurrent Peak Reverse Voltage
50
12
20
13
30
60
14
40
Maximum RMS Voltage
VRMS
14
21
5028
Maximum DC Blocking Voltage
VDC
20
30
40
40
–g fb
IO
Maximum Average Forward Rectified Current
20
10Current 8.3 ms single half sine-wave
Peak Forward Surge
superimposed on rated
0 load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance
(Note 2)
–10
Typical Junction –20
Capacitance (Note 1)
CJ
Operating Temperature
Range
–30
TJ
Storage Temperature
100Range
jb fb(mmhos)
30
200
300
400 TSTG
500
15
50200
100
16
400
60
35
42
56 600
60
80
40
1.0
30
30
20
40
120
115
150
120
200
Volts
70
105
140
Volts
100
700
150
200
Volts
Amp
Amp
1000MHz
℃/W
PF
-55 to +150
10
1000
10
100
50
-55 to +125
700
18
80
70
60
50
40
- 65 to +175
30
20
10
0
10
℃
20
30
℃
g fb (mmhos)
f, FREQUENCY (MHz)
FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
Figure 4. Polar0.85
Form
Figure
Volts
0.9
Maximum Forward Voltage at 1.0A
DC 3. Rectangular
0.92
VFForm
0.50
0.70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.5
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBTH10LT1
VHF/UHF
Transistors
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
y rb , REVERSE TRANSFER ADMITTANCE (mmhos)
• Low profile surface mounted application in order to
TYPICAL CHARACTERISTICS
optimize board space.
• Low power loss, high efficiency.
drop.
• High current capability, low forward voltage
COMMON–BASE
y PARAMETERS versus FREQUENCY
• High surge capability.
(V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C)
• Guardring for overvoltage protection.
y rb , REVERSE TRANSFER ADMITTANCE
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0
5.0 parts meet environmental standards of
• Lead-free
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
100
• RoHS product for packing code suffix "G"
4.0
Halogen free product for packing code suffix "H"
MPS H11
jb rb (mmhos)
Mechanical data
3.0
• Epoxy : UL94-V0 rated flame retardant
–b rb
plastic, SOD-123H
• Case : Molded
–b rb
2.0
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1.0
MPS H1
Method 2026
• Polarity : Indicated by cathode band
• Mounting0 Position : Any
100
200
300
• Weight : Approximated
0.011
gram
0.012(0.3) Typ.
500
200
–2.0
400
0.040(1.0)
0.024(0.6)
–3.0 0.031(0.8) Typ.
0.031(0.8) Typ.
700
–4.0
–g rb
400
–1.0
Dimensions in inches and (millimeters)
1000MHz
–5.0
700
2.0
1000
1.8
1.2
0.8
0.4
0
0.4
0.8
1.2
1.6
2.0
g rb (mmhos)
f, FREQUENCY (MHz)
MAXIMUM Figure
RATINGS
AND ELECTRICAL
CHARACTERISTICS Figure 6. Polar Form
5. Rectangular
Form
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
y ob , OUTPUT ADMITTANCE
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
VRRM
12
20
13
30
Maximum RMS Voltage
9.0
VRMS
14
21
Maximum DC Blocking
8.0 Voltage
VDC
20
30
IO
Maximum Average7.0
Forward Rectified Current
6.0
Peak Forward Surge Current 8.3 ms single half sine-wave
5.0
jb ob (mmhos)
y ob , OUTPUT ADMITTANCE (mmhos)
Maximum Recurrent
10Peak Reverse Voltage
IFSM
b ob
superimposed on rated load (JEDEC method)
4.0
RΘJA
Typical Thermal Resistance (Note 2)
3.0
Typical Junction Capacitance (Note 1)
CJ
2.0
Operating Temperature
Range
TJ
1.0 Range
Storage Temperature
TSTG
g ob
-55 to +125
15
50
16
60
18
80
10
100
115
150
120
200
Volts
28
35
1000MHz
42
56
70
105
140
Volts
40
8.0
50
60
80
100
150
200
Volts
700
6.0
4.0
2.0
400
200
1.0
Amps
30
Amps
40
120
℃/W
PF
-55 to +150
℃
- 65 to +175
100
0
100
200
CHARACTERISTICS
14
40
10
℃
0
300
400
500
700
1000
0 FM150-MH
2.0 FM160-MH
4.0FM180-MH6.0
FM1100-MH8.0
FM1150-MH10
FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH
Maximum Forward Voltage at 1.0A DC f , FREQUENCY (MHz)
VF
Maximum Average Reverse Current
at @T7.A=25℃
Figure
Rectangular
IR Form
@T A=125℃
Rated DC Blocking Voltage
0.50
0.70
0.85
g ob (mmhos)
0.5
Figure 8. Polar Form
0.9
0.92
10
Volts
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBTH10LT1
VHF/UHF
Transistors
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
SOT-23
offers
• Batch process design, excellent power dissipation
.006(0.15)MIN.
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
.122(3.10)
• High current capability, low forward voltage drop.
• High surge capability.
.106(2.70)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
SOD-123H
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, .080(2.04)
solderable per MIL-STD-750
.083(2.10)
.110(2.80)
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
.008(0.20)
0.031(0.8) Typ.
0.031(0.8) Typ.
.003(0.08)
.070(1.78)
Method 2026
0.012(0.3) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum RMS Voltage
12
.020(0.50)
20
.012(0.30)
14
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
Operating Temperature Range
Storage Temperature Range
16
60
CHARACTERISTICS
10
100
115
150
120
200
Volts
21
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
Volts
1.0
Amps
IFSM
30
Amps
40
120
℃/W
0.037
0.95
-55 to +125
PF
-55 to +150
℃
- 65 to +175
℃
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH
0.079
VF
Maximum Average Reverse Current at @T A=25℃
@T A=125℃ 0.035
0.50
2.0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.70
0.85
0.9
0.92
0.5
IR
10
0.9
NOTES:
2- Thermal Resistance From Junction to Ambient
18
80
Volts
TSTG
Maximum Forward Voltage at 1.0A DC
2012-11
15
50
IO
RΘJA
0.037
CJ
0.95
TJ
Typical Junction Capacitance (Note 1)
20
14
40
Dimensions in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave
Typical Thermal Resistance (Note 2)
13
30
VRRM
Maximum Recurrent Peak Reverse Voltage
Rated DC Blocking Voltage
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature
unless otherwise specified.
.004(0.10)MAX.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.031
0.8
inches
mm
WILLAS ELECTRONIC CORP.
Volts
mAmps
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