PD - 95219A
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
100% RG Tested
Lead-Free
IRL2203NSPbF
IRL2203NLPbF
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 7.0mΩ
G
ID = 116A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
TO-262
IRL2203NSPbF IRL2203NLPbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
Parameter
Max
Continuous Drain Current, VGS @ 10V
116
Units
i
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
IDM
400
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
3.8
W
180
W
W/°C
V
A
82
c
VGS
IAR
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
1.2
± 16
60
A
EAR
Repetitive Avalanche Energy
18
mJ
5.0
V/ns
dv/dt
c
c
Peak Diode Recovery dv/dt e
Operating Junction and
TJ
TSTG
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case)
Thermal Resistance
Symbol
k
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB mount, steady state)
www.irf.com
jk
Typ
Max
–––
0.85
–––
40
Units
°C/W
1
10/01/10
IRL2203NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max Units
30
–––
–––
Breakdown Voltage Temp. Coefficient
–––
0.029
–––
Static Drain-to-Source On-Resistance
–––
–––
7.0
VGS = 10V, ID = 60A
–––
–––
10
VGS = 4.5V, ID = 48A
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
RDS(on)
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
f
f
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
Forward Transconductance
73
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
25
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Qg
Total Gate Charge
–––
–––
60
Qgs
Gate-to-Source Charge
–––
–––
14
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
33
RG
Gate Resistance
0.2
–––
3.0
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 15V
tr
Rise Time
–––
160
–––
ID = 60A
td(off)
Turn-Off Delay Time
–––
23
–––
RG = 1.8Ω
tf
Fall Time
–––
66
–––
VGS = 4.5V, See Fig. 10
LD
Internal Drain Inductance
–––
4.5
–––
IGSS
µA
nA
VDS = VGS, ID = 250µA
VDS = 25V, I D = 60A
f
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
ID = 60A
nC
VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
Ω
Between lead,
Nh
6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Input Capacitance
–––
3290
–––
Coss
Output Capacitance
–––
1270
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
170
––– 1320
–––
290
mJ
IAS = 60A, L = 0.16mH
EAS
d
g
h
f
and center of die contact
VGS = 0V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode)
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 0.16mH RG = 25Ω,
IAS = 60A, VGS=10V (See Figure 12)
ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
Min
Typ
Max Units
116
i
Conditions
MOSFET symbol
–––
–––
–––
–––
400
–––
–––
1.2
V
–––
56
84
ns
–––
110
170
nC
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 60A, VGS = 0V
TJ = 25°C, IF = 60A
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C
www.irf.com
IRL2203NS/LPbF
1000
1000
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
2.7V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
2.7V
10
1
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
1000
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
2.0
20µs PULSE WIDTH
TJ = 175 ° C
7.0
ID = 100A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL2203NS/LPbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
5000
4000
Ciss
3000
Coss
2000
1000
0
15
VGS , Gate-to-Source Voltage (V)
6000
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
1
10
0
100
20
ID, Drain-to-Source Current (A)
10000
100
10
TJ = 25 ° C
V GS = 0 V
0.4
60
80
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
TJ = 175 ° C
1
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
0.1
0.0
0
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
VDS = 24V
VDS = 15V
12
VDS , Drain-to-Source Voltage (V)
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
ID = 60A
2.4
100
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRL2203NS/LPbF
120
VDS
LIMITED BY PACKAGE
ID , Drain Current (A)
100
VGS
RD
D.U.T.
RG
+
-VDD
80
V GS
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
175
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
15V
L
VDS
D.U.T
RG
VGS
20V
IAS
tp
DRIVER
+
V
- DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
IRL2203NS/LPbF
600
ID
24A
42A
60A
TOP
500
BOTTOM
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRL2203NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
www.irf.com
7
IRL2203NS/LPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WIT H
LOT CODE 8024
ASS EMBLED ON WW 02, 2000
IN T HE ASS EMBLY LINE "L"
INT ERNATIONAL
RECTIFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS SEMBLY
LOT CODE
PART NUMBER
F530S
DAT E CODE
P = DES IGNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WEEK 02
A = AS SEMBLY S IT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRL2203NS/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
ASS EMBLED ON WW 19, 1997
IN T HE ASS EMBLY LINE "C"
INT ERNATIONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = ASS EMBLY SIT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRL2203NS/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2010
10
www.irf.com