Power Transistors www.jmnic.com BD895 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER 45 V VCEO Collector to emitter voltage 45 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 8.0 A PC Collector power dissipation 70 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TO-220 Electrical Characteristics Tc=25 SYMBOL MAX UNIT ICBO Collector-base cut-off current VCB=45V; IE=0 0.2 mA IEBO Emitter-base cut-off current VEB=5.0V; IC=0 2.0 mA ICEO Collector-emitter cut-off current VCE=45V; IB=0 0.5 mA VCBO Collector-base breakdown voltage V(BR)ceo VEBO PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio hFE-2 Forward current transfer ratio hFE-3 Forward current transfer ratio VBE(on)2 IC=0.1A; IB=0 MIN TYPE 45 V Emitter-base breakdown voltage VCE(sat-1) VBE(on)1 CONDITIONS Base-emitter on voltages Base-emitter on voltages fT Transition frepuency Cob Output Capacitance IC=3A; IB=12mA IC=3A; VCE=3V IC=3A; VCE=3V 2.5 V 2.5 V 750