MSP3415E -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V Lead Free ESD Rating: 2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Application ● PWM application Marking and pin Assignment ● Load switch PIN Configuration SOT-23 Schematic diagram top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP3415E SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit -20 V ±10 V -4 A -30 A 1.4 W -55 To 150 ℃ 89.3 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) MORE Semiconductor Company Limited RθJA http://www.moresemi.com 1/6 MSP3415E Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - 1 μA - - ±10 μA VDS=VGS,ID=-250μA -0.35 -0.55 -0.9 V VGS=-4.5V, ID=-4A - 34 45 mΩ VGS=-2.5V, ID=-4A - 44 60 mΩ VDS=-5V,ID=-4A 8 - - S - 950 - PF - 165 - PF - PF Off Characteristics On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss - 120 Turn-on Delay Time td(on) - 12 nS Turn-on Rise Time tr VDD=-10V,RL=2. 5Ω - 10 nS td(off) VGS=-4.5V,RGEN=3Ω - 19 nS - 25 nS - 12 nC - 1.4 - nC - 3.6 - nC - - -1.2 V - - -4 A VDS=-10V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-4A, VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-4A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP3415E Typical Electrical and Thermal Characteristics Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) 90% Vout VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Safe Operation Area ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output Characteristics MORE Semiconductor Company Limited ID- Drain Current (A) Figure 6 Drain-Source On-Resistance http://www.moresemi.com 3/6 ID- Drain Current (A) Normalized On-Resistance MSP3415E TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance Rdson (mΩ) C Capacitance (pF) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward http://www.moresemi.com 4/6 r(t),Normalized Effective Transient Thermal Impedance MSP3415E Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSP3415E SOT-23 Package Information Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e e1 0.950TYP 1.800 L 2.000 0.550REF L1 0.300 0.500 θ 0° 8° Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. MORE Semiconductor Company Limited http://www.moresemi.com 6/6