Panasonic MA2S111 Silicon epitaxial planar type Datasheet

Switching Diodes
MA2S111
Silicon epitaxial planar type
Unit : mm
For switching circuits
1.60 ± 0.05
■ Features
+ 0.05
( 0.2 )
+ 0.05
0.80 − 0.03
Rating
Unit
Reverse voltage (DC)
VR
80
V
Peak reverse voltage
VRM
80
V
Average forward current
IF(AV)
100
mA
Peak forward current
IFM
225
mA
Non-repetitive peak forward
surge current*
IFSM
500
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
2
0.15 ± 0.05
Symbol
1
0.6 ± 0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1.20 − 0.03
0.30 ± 0.05
• Super-small SS-mini type package
• Allowing high-density mounting
• Short reverse recovery time trr
• Small terminal capacitance, Ct
1 : Anode
2 : Cathode
EIAJ : SC-79
SS-Mini Type Package (2-pin)
Marking Symbol: A
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
IR
VR = 75 V
Forward voltage (DC)
VF
IF = 100 mA
Reverse voltage (DC)
VR
IR =100 µA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
Reverse recovery time*
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Min
Typ
Max
Unit
100
nA
0.95
1.2
V
0.6
2
pF
3
ns
80
V
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
MA2S111
Switching Diodes
IR  V R
102
104
Ta = 150°C
100°C
25°C
10
− 20°C
1
10−1
VF  Ta
1.6
1.4
Ta = 150°C
Forward voltage VF (V)
105
Reverse current IR (nA)
Forward current IF (mA)
IF  VF
103
100°C
103
102
25°C
1.2
1.0
IF = 100 mA
0.8
10 mA
0.6
3 mA
0.4
10
0.2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
IR  Ta
100
35 V
6V
103
102
10
40
80
120
160
Ambient temperature Ta (°C)
200
40
80
120
0.8
0.6
0.4
0.2
20
40
60
80
200
100
Reverse voltage VR (V)
120
Ta = 25°C
IF(surge)
300
tW
Non repetitive
100
30
10
3
1
0.3
0.1
0
160
IF(surge)  tW
1 000
1.0
0
0
0
Ambient temperature Ta (°C)
f = 1 MHz
Ta = 25°C
Terminal capacitance Ct (pF)
VR = 75 V
0
−40
120
1.2
104
Reverse current IR (nA)
80
Ct  VR
105
2
60
Reverse voltage VR (V)
Forward voltage VF (V)
1
−40
40
Forward surge current IF(surge) (A)
10−2
0.1
0.3
1
3
10
Pulse width tW (ms)
30
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