Isahaya INA5001AP1 For low frequency amplify application silicon pnp epitaxial type Datasheet

〈SMALL-SIGNAL TRANSISTOR〉
INA5001AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA5001AP1 is a super mini package resin sealed
silicon PNP epitaxial transistor,
OUTLINE DRAWING
Unit:mm
It is designed for relay draive or Power supply application.
4.6 MAX
1.6
1.5
●Super mini package for easy mounting
● High voltage
0.8 MIN
● High collector current
C
E
● Low VCE(sat) VCE(sat)=-0.5 V max(@IC=-500mA/IB=-50mA)
IC=-1A
VCEO=-50V
2.5
FEATURE
B
4.2 MAX
.
0.53
MAX
0.4
0.48 MAX
1.5
3.0
マーキング
MARKING
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
TERMINAL CONNECTER
①:BASE
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
-50
V
VEBO
Emitter to Base voltage
-5
V
VCEO
Collector to Emitter voltage
-50
V
IC
Collector current
-1
A
ICM
Peak collector current
-2
A
PC
Collector dissipation
500
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
電極接続
JEITA:SC-62
JEDEC:SOT-89
E: エミッタ
②:EMITTER
C: コレクタ
③:COLLECTOR
B: ベース
EIAJ : SC-62
JEDEC :
MARKING
TYPE NAME
A Z
W
LOT №
hFE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
Limits
Min
Typ
Max
Unit
C to B break down voltage
V(BR)CBO
I C=-10μA,I E=0mA
-50
V
E to B break down voltage
V(BR)EBO
I E=-10μA,I C=0mA
-5
V
C to E break down voltage
V(BR)CEO
I C=-1mA,RBE=∞
-50
V
Collector cut off current
ICBO
VCB=-50V,I E =0mA
-0.1
μA
Emitter cut off current
IEBO
VEB=-5V,I C=0mA
-0.1
μA
hFE
VCE=-4V,IC=-0.1A
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
VCE(sat)
fT
Cob
160
IC=-500mA,I B=-50mA
380
-
-0.5
V
VCE=-2V,IE=500mA
120
MHz
VCB=-10V,IE=0mA,f=1MHz
12
pF
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
INA5001AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICIAL CHARACTERISTICS
COMMON EMITTER OUTPUT
Collector dissipation-AMBIENT TEMPERATURE
-0.6
Collector dissipation Pc (mW)
1000
Collector current IC (A)
800
600
400
200
-2.5mA
-0.4
-2.0mA
-1.5mA
-1mA
-0.2
IB=-0.5mA
-0
0
40
80
120
160
AMBIENT TEMPERATURE Ta (℃)
200
-0
-0.5
DC forward current gain hFE
-40℃
-1
-0.1
-0.2
-0.4
-0.6
-0.8
-1
BASE TO EMITTER VOLTAGE VBE (V)
-1.2
25℃
-40℃
100
10
-0.1
-1
-10
-100
Collector current IC(mA)
COLLECTOR TO EMITTERSATURATION VOLTAGE
VS. COLLECTOR CURRENT
Ta=25℃
IC/IB=10
COLLECTOR TO EMITTERSATURATION
VOLTAGE VCE(sat) (mV)
-1.4
-0.5A
-0.6A
-0.3A
-0.4A
-0.2A
IC=-0.1A
-1.2
-100
-0.6
-0.4
-0.2
-0
-0.1
-1000
-1000
-1.6
-0.8
-3
Ta=85℃
COLLECTOR TO EMITTERSATURATION VOLTAGE
VS. BASE CURRENT
-1
-2.5
VCE=-4V
Ta=85℃
-0
-2
1000
VCE=-4V
-10
-1.5
DC forward current gain VS. Collector current
COMMON EMITTER TRANSFER
25℃
-1
COLLECTOR TO EMITTER VOLTAGE VCE (V)
-100
COLLECTOR TO EMITTERSATURATION
VOLTAGE VCE (V)
Ta=25℃
-4.0mA
-3.5mA
-3.0mA
0
Collector current IC(mA)
-5.0mA
-4.5mA
PcMAX=0.5W
-1
-10
BASE CURRENT IB (mA)
-100
Ta=85℃
25℃
-40℃
-10
-0.1
-1
-10
-100
COLLECTOR CURRENT IC(mA)
ISAHAYA ELECTRONICS CORPORATION
-1000
〈SMALL-SIGNAL TRANSISTOR〉
INA5001AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
100
1000
COLLECTOR OUTPUT CAPACITANCE
Cob (pF)
GAIN BAND WIDTH PRODUCT fT (MHz)
Ta=25℃
VCE=-2V
100
10
1
0.1
1
10
100
EMITTER CURRENT IE (mA)
Ta=25℃
single pulse
1000
Ta=25℃
IE=0
f=1MHz
10
1
-0.1
-1
-10
COLLECTOR TO BASE VOLTAGE VCB (V)
ASO
10
1
ICmax=-1A
PW=1msec
10msec
0.1
100msec
DC(500mW)
0.01
0.001
-0.1
1sec
VCEmax=-50V
Collector current IC (A)
ICMmax=-2A(less than 100msec)
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE VCE (V)
ISAHAYA ELECTRONICS CORPORATION
-100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2009
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