〈SMALL-SIGNAL TRANSISTOR〉 INA5001AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION INA5001AP1 is a super mini package resin sealed silicon PNP epitaxial transistor, OUTLINE DRAWING Unit：ｍｍ It is designed for relay draive or Power supply application. 4.6 MAX 1.6 1.5 ●Super mini package for easy mounting ● High voltage 0.8 MIN ● High collector current C E ● Low VCE(sat) VCE(sat)=-0.5 V max(@IC=-500mA/IB=-50mA) IC=-1A VCEO=-50V 2.5 FEATURE B 4.2 MAX . 0.53 MAX 0.4 0.48 MAX 1.5 3.0 マーキング MARKING APPLICATION Relay drive, Power supply for audio equipment, VTR , etc TERMINAL CONNECTER ①：BASE MAXIMUM RATINGS（Ta=25℃） Symbol Parameter Ratings Unit VCBO Collector to Base voltage -50 V VEBO Emitter to Base voltage -5 V VCEO Collector to Emitter voltage -50 V IC Collector current -1 A ICM Peak collector current -2 A PC Collector dissipation 500 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ 電極接続 JEITA:SC-62 JEDEC:SOT-89 Ｅ: エミッタ ②：EMITTER Ｃ: コレクタ ③：COLLECTOR Ｂ: ベース EIAJ : SC-62 JEDEC : MARKING TYPE NAME A Z W LOT № hFE ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Symbol Test conditions Limits Min Typ Max Unit C to B break down voltage V(BR)CBO I C=-10μA，I E=0mA -50 V E to B break down voltage V(BR)EBO I E=-10μA，I C=0mA -5 V C to E break down voltage V(BR)CEO I C=-1mA，RBE=∞ -50 V Collector cut off current ICBO VCB=-50V，I E =0mA -0.1 μA Emitter cut off current IEBO VEB=-5V，I C=0mA -0.1 μA hFE VCE=-4V，IC=-0.1A DC forward current gain C to E Saturation Voltage Gain bandwidth product Collector output capacitance VCE(sat) fT Cob 160 IC=-500mA，I B=-50mA 380 - -0.5 V VCE=-2V，IE=500mA 120 MHz VCB=-10V，IE=0mA，f=1MHz 12 pF ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 INA5001AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE TYPICIAL CHARACTERISTICS COMMON EMITTER OUTPUT Collector dissipation-AMBIENT TEMPERATURE -0.6 Collector dissipation Pc (mW) 1000 Collector current IC (A) 800 600 400 200 -2.5mA -0.4 -2.0mA -1.5mA -1mA -0.2 IB=-0.5mA -0 0 40 80 120 160 AMBIENT TEMPERATURE Ta (℃) 200 -0 -0.5 DC forward current gain hFE -40℃ -1 -0.1 -0.2 -0.4 -0.6 -0.8 -1 BASE TO EMITTER VOLTAGE VBE (V) -1.2 25℃ -40℃ 100 10 -0.1 -1 -10 -100 Collector current IC(mA) COLLECTOR TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT Ta=25℃ IC/IB=10 COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat) （ｍV) -1.4 -0.5A -0.6A -0.3A -0.4A -0.2A IC=-0.1A -1.2 -100 -0.6 -0.4 -0.2 -0 -0.1 -1000 -1000 -1.6 -0.8 -3 Ta=85℃ COLLECTOR TO EMITTERSATURATION VOLTAGE VS. BASE CURRENT -1 -2.5 VCE=-4V Ta=85℃ -0 -2 1000 VCE=-4V -10 -1.5 DC forward current gain VS. Collector current COMMON EMITTER TRANSFER 25℃ -1 COLLECTOR TO EMITTER VOLTAGE VCE (V) -100 COLLECTOR TO EMITTERSATURATION VOLTAGE VCE (V) Ta=25℃ -4.0mA -3.5mA -3.0mA 0 Collector current IC(mA) -5.0mA -4.5mA PcMAX=0.5W -1 -10 BASE CURRENT IB (mA) -100 Ta=85℃ 25℃ -40℃ -10 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) ISAHAYA ELECTRONICS CORPORATION -1000 〈SMALL-SIGNAL TRANSISTOR〉 INA5001AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 100 1000 COLLECTOR OUTPUT CAPACITANCE Cob (pF) GAIN BAND WIDTH PRODUCT ｆT (MHｚ) Ta=25℃ VCE=-2V 100 10 1 0.1 1 10 100 EMITTER CURRENT IE (ｍA) Ta=25℃ single pulse 1000 Ta=25℃ IE=0 ｆ=1MHz 10 1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB (V) ASO 10 1 ICmax=-1A PW=1msec 10msec 0.1 100msec DC(500mW) 0.01 0.001 -0.1 1sec VCEmax=-50V Collector current IC (A) ICMmax=-2A(less than 100msec） -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE VCE (V) ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Apr.2009