APT55M65JFLL
550V
POWER MOS 7
R
FREDFET
®
VDSS
ID
S
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
0.065Ω
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
63A
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT55M65JFLL
UNIT
550
Volts
Drain-Source Voltage
63
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
595
Watts
Linear Derating Factor
4.76
W/°C
PD
TJ,TSTG
1
252
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
63
(Repetitive and Non-Repetitive)
1
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
550
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 31.5A)
TYP
MAX
UNIT
Volts
0.065
Ohms
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
7-2004
Characteristic / Test Conditions
050-7227 Rev A
Symbol
APT55M65JFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 275V
ID = 63A @ 25°C
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
1155
VDD = 367V, VGS = 15V
1510
ID = 63A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
10
RG = 0.6Ω
Eon
UNIT
pF
80
205
55
105
23
16
55
VDD = 275V
Fall Time
MAX
9165
1700
ID = 63A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
µJ
1650
VDD = 367V, VGS = 15V
ID = 63A, RG = 5Ω
1500
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
IS
TYP
MAX
63
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
MIN
Peak Diode Recovery
dt
dv/
UNIT
Amps
(Body Diode)
256
(VGS = 0V, IS = -63A)
1.3
Volts
15
V/ns
dt
5
t rr
Reverse Recovery Time
(IS = -63A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -63A, di/dt = 100A/µs)
Tj = 25°C
2.6
Tj = 125°C
10
IRRM
Peak Recovery Current
(IS = -63A, di/dt = 100A/µs)
Tj = 25°C
17
Tj = 125°C
34
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.21
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.15
0.7
0.5
0.10
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7227 Rev A
7-2004
0.25
0.9
0.3
0
t1
t2
0.05
Duty Factor D = t1/t2
SINGLE PULSE
0.1
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
°C/W
4 Starting Tj = +25°C, L = 1.61mH, RG = 25Ω, Peak IL = 63A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ ID-63A di/dt ≤ 700A/µs VR ≤ 550V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.20
UNIT
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
Power
(watts)
0.142
0.0189
0.0273F
0.469F
44.2F
ID, DRAIN CURRENT (AMPERES)
0.0492
VGS =15 & 10V
180
RC MODEL
Junction
temp. (°C)
APT55M65JFLL
200
Case temperature. (°C)
160
6.5V
6V
140
5.5V
120
100
80
5V
60
40
4.5V
20
4V
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
120
100
80
60
TJ = -55°C
40
TJ = +25°C
20
0
TJ = +125°C
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
D
= 31.5A
GS
40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
= 10V
2.0
1.5
1.0
0.5
0.0
-50
20
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ 31.5A
GS
1.30
1.15
70
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7-2004
ID, DRAIN CURRENT (AMPERES)
160
050-7227 Rev A
180
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
10,000
100µS
50
10
1mS
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
550
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 63A
12
VDS= 110V
VDS= 275V
8
VDS= 440V
4
0
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
C, CAPACITANCE (pF)
100
1
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
100
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
td(off)
R
G
100
G
= 5Ω
J
L = 100µH
60
J
L = 100µH
100
80
60
tr
20
0
10
30
0
10
70
90
110
130
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
50
70
90
110
130
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4500
6,000
5,000
3000
2500
2000
V
Eon
R
G
1000
= 367V
= 5Ω
T = 125°C
J
L = 100µH
500
0
10
DD
Eoff
30
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
I
3500
30
V
4000
1500
tf
40
td(on)
20
7-2004
= 367V
= 5Ω
120
= 367V
40
050-7227 Rev A
DD
R
T = 125°C
T = 125°C
80
V
140
tr and tf (ns)
DD
TJ =+150°C
TJ =+25°C
160
V
Crss
10
180
120
Coss
1,000
180
140
td(on) and td(off) (ns)
APT55M65JFLL
30,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
252
DD
D
50
= 367V
= 63A
T = 125°C
J
Eoff
L = 100µH
EON includes
4,000
diode reverse recovery.
3,000
Eon
2,000
1,000
EON includes
diode reverse recovery.
50
70
90
110
130
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT55M65JFLL
90%
Gate Voltage
10%
TJ125°C
Gate Voltage
T 125°C
J
td(off)
td(on)
tr
Drain Voltage
90%
Drain Current
90%
tf
5%
10%
5%
10%
0
Drain Voltage
Switching Energy
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
V DS
ID
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
7-2004
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7227 Rev A
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)