MGSF2N02EL, MVSF2N02EL Power MOSFET 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. www.onsemi.com 2.8 A, 20 V RDS(on) = 85 mW (max) Features • • • • • Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature AEC Q101 Qualified and PPAP Capable − MVSF2N02EL These Devices are Pb−Free and are RoHS Compliant N−Channel D Applications • DC−DC Converters • Power Management in Portable and Battery Powered Products, ie: G Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones S MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 8.0 Vdc Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) IDM 2.8 5.0 Total Power Dissipation @ TA = 25°C PD 1.25 W Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance Junction−to−Ambient (Note 1) Thermal Resistance Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds A ID 3 SOT−23 CASE 318 STYLE 21 1 NT MG G 1 2 xxx M G = Specific Device Code = Date Code = Pb−Free Package °C/W RqJA 100 PIN ASSIGNMENT 300 TL 3 °C 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 1” Pad, t < 10 sec. 2. Min pad, steady state. Drain 1 Gate 2 Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2002 October, 2016 − Rev. 5 1 Publication Order Number: MGSF2N02EL/D MGSF2N02EL, MVSF2N02EL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 10 mAdc) Temperature Coefficient (Positive) V(BR)DSS Min Typ Max Unit 20 − − 22 − − Vdc mV/°C − − − − 1.0 10 − − "100 nA 0.5 − − −2.3 1.0 − Vdc mV/°C − − 78 105 85 115 Ciss − 150 − Coss − 130 − Crss − 45 − td(on) − 6.0 − tr − 95 − td(off) − 28 − tf − 125 − QT − 3.5 − Qgs − 0.6 − Qgd − 1.5 − − − 0.76 − 1.2 − trr − 104 − ta − 42 − tb − 62 − QRR − 0.20 − OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Source Leakage Current (VGS = $ 8.0 Vdc, VDS = 0 Vdc) IGSS mAdc ON CHARACTERISTICS (Note 3) Gate−Source Threshold Voltage (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (VGS = 4.5 Vdc, ID = 3.6 A) (VGS = 2.5 Vdc, ID = 3.1 A) RDS(on) mW DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 MHz) Output Capacitance Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time (VDD = 16 Vdc, ID = 2.8 Adc, Vgs = 4.5 V, RG = 2.3 W) Turn−Off Delay Time Fall Time Gate Charge (VDS = 16 Vdc, ID = 1.75 Adc, VGS = 4.0 Vdc) (Note 3) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS VSD Forward Voltage (IS = 1.0 Adc, VGS = 0 Vdc) (Note 3) Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dlS/ dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge V ns mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Package Shipping† SOT−23 (Pb−Free) 3,000 / Tape & Reel Device MGSF2N02ELT1G MVSF2N02ELT1G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *MVSF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 MGSF2N02EL, MVSF2N02EL TYPICAL CHARACTERISTICS 5 VDS w 10 V TJ = 25°C VGS = 7 V VGS = 5 V 6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 8 VGS = 2.2 V VGS = 2.0 V VGS = 2.6 V 4 VGS = 1.8 V VGS = 3 V VGS = 1.6 V 2 4 3 2 TJ = 55°C TJ = 100°C 1 VGS = 1.2 V 0 0 0 0.5 1 1.5 2 2.5 0 1.5 2 2.5 3 Figure 2. Transfer Characteristics 0.3 0.12 TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1 VGS, GATE−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics TJ = 25°C 0.10 ID = 3.6 A 0.2 0.08 0.06 0.1 0.04 VGS = 2.5 V 0 0.02 0 2 4 6 4 8 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.8 6 7 8 Figure 4. On−Resistance vs. Gate Voltage 10000 ID = 3.6 A VGS = 4.5 V VGS = 0 V IDSS, LEAKAGE (nA) 1.5 1.2 0.9 0.6 −50 5 −ID, DRAIN CURRENTS (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.5 −25 0 25 50 75 100 125 150 TJ = 150°C 1000 TJ = 100°C 100 10 4 TJ, JUNCTION TEMPERATURE (°C) 8 12 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature www.onsemi.com 3 Figure 6. Drain−to−Source Leakage Current vs. Voltage 20 MGSF2N02EL, MVSF2N02EL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 300 C, CAPACITANCE (pF) 250 200 150 Ciss 100 Coss 50 Crss 0 0 4 8 12 16 20 5 QT 4 3 Q1 Q2 2 1 0 ID = 3.6 A TJ = 25°C 0 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) 2 3 Qg, TOTAL GATE CHARGE, (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 350 1.8 1000 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 2.8 A VGS = 4.5 V tf 100 t, TIME (ns) tr td(off) 10 td(on) 10 1.2 0.9 0.6 0.3 0 0.20 1 1 VGS = 4.5 V TJ = 25°C 1.5 100 0.30 0.40 0.50 0.60 0.70 0.80 0.90 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current www.onsemi.com 4 1.00 MGSF2N02EL, MVSF2N02EL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MGSF2N02EL/D