ON MGSF2N02EL Power mosfet Datasheet

MGSF2N02EL,
MVSF2N02EL
Power MOSFET
2.8 Amps, 20 Volts, N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
www.onsemi.com
2.8 A, 20 V
RDS(on) = 85 mW (max)
Features
•
•
•
•
•
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT−23 Surface Mount Package Saves Board Space
IDSS Specified at Elevated Temperature
AEC Q101 Qualified and PPAP Capable − MVSF2N02EL
These Devices are Pb−Free and are RoHS Compliant
N−Channel
D
Applications
• DC−DC Converters
• Power Management in Portable and Battery Powered Products, ie:
G
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
S
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 8.0
Vdc
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp = 10 ms)
IDM
2.8
5.0
Total Power Dissipation @ TA = 25°C
PD
1.25
W
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to
150
°C
Thermal Resistance
Junction−to−Ambient (Note 1)
Thermal Resistance
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
A
ID
3
SOT−23
CASE 318
STYLE 21
1
NT MG
G
1
2
xxx
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
°C/W
RqJA
100
PIN ASSIGNMENT
300
TL
3
°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. 1” Pad, t < 10 sec.
2. Min pad, steady state.
Drain
1
Gate
2
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2002
October, 2016 − Rev. 5
1
Publication Order Number:
MGSF2N02EL/D
MGSF2N02EL, MVSF2N02EL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 10 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Min
Typ
Max
Unit
20
−
−
22
−
−
Vdc
mV/°C
−
−
−
−
1.0
10
−
−
"100
nA
0.5
−
−
−2.3
1.0
−
Vdc
mV/°C
−
−
78
105
85
115
Ciss
−
150
−
Coss
−
130
−
Crss
−
45
−
td(on)
−
6.0
−
tr
−
95
−
td(off)
−
28
−
tf
−
125
−
QT
−
3.5
−
Qgs
−
0.6
−
Qgd
−
1.5
−
−
−
0.76
−
1.2
−
trr
−
104
−
ta
−
42
−
tb
−
62
−
QRR
−
0.20
−
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Source Leakage Current (VGS = $ 8.0 Vdc, VDS = 0 Vdc)
IGSS
mAdc
ON CHARACTERISTICS (Note 3)
Gate−Source Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 3.6 A)
(VGS = 2.5 Vdc, ID = 3.1 A)
RDS(on)
mW
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
(VDD = 16 Vdc, ID = 2.8 Adc,
Vgs = 4.5 V, RG = 2.3 W)
Turn−Off Delay Time
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 1.75 Adc,
VGS = 4.0 Vdc) (Note 3)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
VSD
Forward Voltage
(IS = 1.0 Adc, VGS = 0 Vdc) (Note 3)
Reverse Recovery Time
(IS = 1.0 Adc, VGS = 0 Vdc,
dlS/ dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
V
ns
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
Package
Shipping†
SOT−23
(Pb−Free)
3,000 / Tape & Reel
Device
MGSF2N02ELT1G
MVSF2N02ELT1G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*MVSF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
2
MGSF2N02EL, MVSF2N02EL
TYPICAL CHARACTERISTICS
5
VDS w 10 V
TJ = 25°C
VGS = 7 V
VGS = 5 V
6
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
8
VGS = 2.2 V
VGS = 2.0 V
VGS = 2.6 V
4
VGS = 1.8 V
VGS = 3 V
VGS = 1.6 V
2
4
3
2
TJ = 55°C
TJ = 100°C
1
VGS = 1.2 V
0
0
0
0.5
1
1.5
2
2.5
0
1.5
2
2.5
3
Figure 2. Transfer Characteristics
0.3
0.12
TJ = 25°C
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
1
VGS, GATE−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
TJ = 25°C
0.10
ID = 3.6 A
0.2
0.08
0.06
0.1
0.04
VGS = 2.5 V
0
0.02
0
2
4
6
4
8
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.8
6
7
8
Figure 4. On−Resistance vs. Gate Voltage
10000
ID = 3.6 A
VGS = 4.5 V
VGS = 0 V
IDSS, LEAKAGE (nA)
1.5
1.2
0.9
0.6
−50
5
−ID, DRAIN CURRENTS (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.5
−25
0
25
50
75
100
125
150
TJ = 150°C
1000
TJ = 100°C
100
10
4
TJ, JUNCTION TEMPERATURE (°C)
8
12
16
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Temperature
www.onsemi.com
3
Figure 6. Drain−to−Source Leakage
Current vs. Voltage
20
MGSF2N02EL, MVSF2N02EL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
300
C, CAPACITANCE (pF)
250
200
150
Ciss
100
Coss
50
Crss
0
0
4
8
12
16
20
5
QT
4
3
Q1
Q2
2
1
0
ID = 3.6 A
TJ = 25°C
0
1
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
3
Qg, TOTAL GATE CHARGE, (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total Charge
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
350
1.8
1000
IS, SOURCE CURRENT (AMPS)
VDD = 16 V
ID = 2.8 A
VGS = 4.5 V
tf
100
t, TIME (ns)
tr
td(off)
10
td(on)
10
1.2
0.9
0.6
0.3
0
0.20
1
1
VGS = 4.5 V
TJ = 25°C
1.5
100
0.30
0.40
0.50
0.60
0.70
0.80
0.90
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
www.onsemi.com
4
1.00
MGSF2N02EL, MVSF2N02EL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
◊
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MGSF2N02EL/D
Similar pages