PHOTODIODE InGaAs PIN photodiode G8421/G8371/G5851 series Long wavelength type Features Applications l Long cut-off wavelength: 1.9 µm l Optical power meter l 3-pin TO-18 package: low price l Gas analyzer l Thermoelectrically cooled TO-18 package: low dark current l NIR (near infrared) photometry l Active area: φ0.3 to φ3 mm ■ Specifications / Absolute maximum ratings Type No. G8421-03 G8421-05 G8371-01 G8371-03 G5851-103 G5851-11 G5851-13 G5851-203 G5851-21 G5851-23 Dimensional outline/ Package Window material ➀ TO-18 ➁ TO-5 ➂ TO-8 ➃ TO-8 Active area Cooling (mm) f0.3 f0.5 f1 f3 f0.3 f1 f3 f0.3 f1 f3 Non-cooled One-stage TE-cooled Two-stage TE-cooled Absolute maximum ratings Thermistor TE-cooler Reverse Operating Storage power allowable voltage temperature temperature dissipation Topr current Tstg VR (mW) (A) (V) (°C) (°C) - Type No. G8421-03 G8421-05 G8371-01 G8371-03 G5851-103 G5851-11 G5851-13 G5851-203 G5851-21 G5851-23 (°C) (µm) 25 0.9 to 1.9 -10 0.9 to 1.87 -20 0.9 to 1.85 (µm) (A/W) 0.2 1.75 1.1 -55 to +125 -40 to +70 -55 to +85 1.0 Cut-off frequency fc VR=1 V RL=50 W -3 dB Max. (MHz) (nA) 300 100 500 80 1000 40 20000 3 30 100 100 40 2000 3 15 100 50 40 1000 3 Dark current ID VR=1 V Typ. (nA) 30 50 100 2000 3 10 200 1.5 5 100 -40 to +85 2 1.5 ■ Electrical and optical characteristics (Typ. unless otherwise noted) Measurement Spectral Peak Photo Condition response sensitivity sensitivity range S wavelength Element l lp l=lp temperature - Terminal Shunt capacitance resistance Ct Rsh VR=1 V V4=10 mV f=1 MHz (pF) 8 20 80 800 8 80 800 8 80 800 (MW) 1.5 1 0.5 0.05 15 5 0.5 35 10 1 D* l=lp NEP l=lp (cm·Hz1/2/W) (W/Hz1/2) 9 × 10-14 1.5 × 10-13 5 × 1011 2 × 10-13 8 × 10-13 3 × 10-14 12 1.5 × 10 6 × 10-14 2 × 10-13 2 × 10-14 12 2.5 × 10 4 × 10-14 1.5 × 10-13 1 InGaAs PIN photodiode ■ Spectral response G8421/G8371/G5851 series ■ Photo sensitivity temperature characteristic (Typ.) (Typ.) 1.4 TEMPERATURE COEFFICIENT (%/˚C) 2 PHOTO SENSITIVITY (A/W) 1.2 T=25 ˚C 1.0 0.8 0.6 T= -10 ˚C 0.4 0.2 0 0.8 T= -20 ˚C 1.0 1.2 1.4 1.6 1.8 2.0 1 0 -1 0.8 2.2 1 1.2 1.4 WAVELENGTH (µm) 1.6 1.8 2 2.2 2.4 2.6 WAVELENGTH (µm) KIRDB0221EA KIRDB0208EA ■ Dark current vs. reverse voltage Non-cooled type TE-cooled type (Typ. Ta=25 ˚C) 10 µA (Typ.) 1 µA G5851-13 (T= -10 ˚C) G5851-23 (T= -20 ˚C) G8371-03 100 nA DARK CURRENT DARK CURRENT 1 µA G8371-01 100 nA 10 nA G8421-03 G8421-05 G5851-21 (T= -20 ˚C) G5851-11 (T= -10 ˚C) 10 nA 1 nA G5851-103 (T= -10 ˚C) G5851-203 (T= -20 ˚C) 1 nA 0.01 0.1 1 100 pA 0.01 10 0.1 REVERSE VOLTAGE (V) 1 10 REVERSE VOLTAGE (V) KIRDB0232EB ■ Terminal capacitance vs. reverse voltage KIRDB0223EA ■ Shunt resistance vs. element temperature (Typ. Ta=25 ˚C, f=1 MHz) 10 nF (Typ. VR=10 mV) 10 MΩ G8421-03 G5851-103/-203 1 MΩ 1 nF SHUNT RESISTANCE TERMINAL CAPACITANCE G8371-03 G5851-13/-23 G8371-01 G5851-11/-21 100 pF 10 pF G8421-05 1 10 G8371-01 G5851-11/-21 10 kΩ G8371-03 G5851-13/-23 100 Ω -40 -20 0 20 40 60 80 90 100 ELEMENT TEMPERATURE (˚C) REVERSE VOLTAGE (V) KIRDB0233EA 2 100 kΩ 1 kΩ G8421-03 G5851-103/-203 1 pF 0.1 G8421-05 KIRDB0234EA InGaAs PIN photodiode ■ Thermistor temperature characteristic ■ Cooling characteristics of TE-cooler (Typ.) 6 40 ELEMENT TEMPERATURE (˚C) RESISTANCE (Ω) 10 105 104 10 G8421/G8371/G5851 series 3 20 ONE-STAGE TE-COOLED TYPE 0 -20 TWO-STAGE -40 TE-COOLED TYPE -60 -40 -20 0 20 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 0 0.4 0.8 1.2 1.6 CURRENT (A) ELEMENT TEMPERATURE (˚C) KIRDB0116EA KIRDB0231EA ■ Current vs. voltage characteristics of TE-cooler 1.6 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 1.4 CURRENT (A) 1.2 ONE-STAGE TE-COOLED TYPE 1.0 0.8 0.6 TWO-STAGE TE-COOLED TYPE 0.4 0.2 0 0 0.5 1.0 1.5 VOLTAGE (V) KIRDB0115EA 3 InGaAs PIN photodiode G8421/G8371/G5851 series ■ Dimensional outlines (unit: mm) ➀ G8421-03/-05, G8371-01 ➁ G8371-03 9.2 ± 0.2 5.4 ± 0.2 2.5 ± 0.2 4.2 ± 0.2 18 MIN. 0.15 MAX. 0.45 LEAD 0.4 MAX. 0.45 LEAD 8.1 ± 0.1 WINDOW 5.9 ± 0.1 PHOTOSENSITIVE SURFACE 13 MIN. PHOTOSENSITIVE SURFACE 3.6 ± 0.2 WINDOW 3.0 ± 0.1 2.7 ± 0.2 4.7 ± 0.1 5.1 ± 0.3 2.5 ± 0.2 1.5 MAX. CASE CASE KIRDA0150EA ➂ G5851-103/-11/-13 KIRDA0151EA ➃ G5851-203/-21/-23 12 MIN. 0.45 LEAD PHOTOSENSITIVE SURFACE 10 ± 0.2 12 MIN. PHOTOSENSITIVE SURFACE 6.4 ± 0.2 14 ± 0.2 WINDOW 10 ± 0.2 4.4 ± 0.2 14 ± 0.2 WINDOW 10 ± 0.2 6.7 ± 0.2 15.3 ± 0.2 15.3 ± 0.2 0.45 LEAD 5.1 ± 0.2 10.2 ± 0.2 10.2 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 5.1 ± 0.2 KIRDA0029EB KIRDA0031EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1046E02 Jan.2003 DN