CJP02N80 TO-220-3L Plastic-Encapsulate MOSFETS CJP02N80 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION The CJP02N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The CJP02N80 is universally applied in high efficiency switch mode power supply. 1. GATE 2. DRAIN 3. SOURCE FEATURE Excellent package for good heat dissipation z High switching speed z z 100% avalanche tested APPLICATION z Power switching application z DC/DC converters Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 800 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 2.4 Pulsed Drain Current IDM 9.6 Single Pulsed Avalanche Energy (note1) EAS 180 mJ Thermal Resistance from Junction to Ambient ℃/W RθJA 62.5 Junction Temperature TJ 150 Storage Temperature Range TSTG -55 ~+150 TL 260 Maximum lead temperature for soldering purposes , 1/8”from case for 5 seconds [email protected] www.zpsemi.com V A ℃ 1 of 2 CJP02N80 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 800 V Zero gate voltage drain current IDSS VDS =800V, VGS =0V 10 µA Gate-body leakage current IGSS VDS =0V, VGS =±30V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 5 V Static drain-source on-resistance RDS(on) VGS =10V, ID =1.2A 6.3 Ω gfs VDS =50V, ID =1.2A On characteristics Forward transconductance (note2) 3 1.5 2.65 S Dynamic characteristics (note 3) Input capacitance Ciss 550 Output capacitance Coss Reverse transfer capacitance Crss 7 td(on) 35 VDS =25V,VGS =0V,f =1MHz 60 pF Switching characteristics (note 2,3) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) 70 VDD=400V, RG=25Ω, ID =2.4A 60 tf 65 Total Gate Charge Qg 15 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =640V,VGS =10V,ID =2.4A ns nC 2.6 nC 6 nC Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS = 0V, IS =2.4A 1.4 V IS 2.4 A ISM 9.6 A Notes : 1. IL=2.4A, VDD=50V, RG=25Ω,Starting TJ=25℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. Guaranteed by design, not subject to production [email protected] www.zpsemi.com 2 of 2