INCHANGE Semiconductor isc Silicon NPN Power Transistors MJD47 DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 250V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICM Collector Current-Peak 2.0 A IB Base Current 0.6 A Collector Power Dissipation TC=25℃ 15 Collector Power Dissipation Ta=25℃ 1.56 Junction Temperature 150 ℃ -65~150 ℃ PD Tj Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website： www.iscsemi.com MAX UNIT 8.33 ℃/W 80 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors MJD47 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 10V 1.5 V ICBO Collector Cutoff Current VCB= 350V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 150V; IB= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.3A; VCE= 10V 30 hFE-2 DC Current Gain IC= 1A; VCE= 10V 10 Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 10 fT 250 UNIT V 150 MHz Pulse Test: PW≤300μs, Duty Cycle≤2.0% isc website： www.iscsemi.com 2 isc & iscsemi is registered trademark