Inchange Semiconductor Product Specification BD176 BD178 BD180 Silicon PNP Power Transistors · DESCRIPTION With TO-126 package ·Complement to type BD175 /177 /179 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD176 VCBO VCEO Collector-base voltage Collector-emitter voltage BD178 Open emitter Emitter -base voltage IC -60 BD180 -80 BD176 -45 BD178 UNIT -45 Open base BD180 VEBO VALUE -60 V V -80 Open collector -5 V Collector current (DC) -3 A ICM Collector current-Peak -7 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD176 BD178 BD180 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage Base-emitter on voltage VBE CONDITIONS MAX UNIT IC=-1A; IB=-0.1A -0.8 V IC=-1A ; VCE=-2V -1.3 V BD176 VCEO(SUS) Collector-emitter sustaining voltage BD178 IC=-0.1A; IB=0 -80 BD176 VCB=-45V; IE=0 BD178 VCB=-60V; IE=0 BD180 VCB=-80V; IE=0 Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-150mA ; VCE=-2V 40 hFE-2 DC current gain IC=-1A ; VCE=-2V 15 Transition frequency IC=-250mA; VCE=-10V 3 hFE-1 Classifications 6 10 16 40-100 63-160 100-250 V -60 IEBO fT Collector cut-off current TYP. -45 BD180 ICBO MIN ※ classification 16 :only BD176 2 -100 μA -1 mA 250 MHz Inchange Semiconductor Product Specification BD176 BD178 BD180 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3