Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060NR1 MRF9060NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — - 31.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power 945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF9060NR1 CASE 1337 - 03, STYLE 1 TO - 272- 2 PLASTIC MRF9060NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, + 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 223 1.79 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.56 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF9060NR1 MRF9060NBR1 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model MRF9060NR1 MRF9060NBR1 C6 (Minimum) C5 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature 1 3 260 260 Per JESD 22 - A113, IPC/JEDEC J - STD - 020 MRF9060NR1 MRF9060NBR1 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) 3 3.7 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) — 0.21 0.4 Vdc gfs — 5.3 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 101 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 53 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.5 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics (continued) MRF9060NR1 MRF9060NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — - 31.5 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — - 14.5 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Gps — 18 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) η — 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) IRL — - 12.5 — dB Functional Tests (In Freescale Test Fixture, 50 ohm system) MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 3 B1 VGG B2 + + C6 C7 L1 L2 C4 RF INPUT Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 VDD + + C15 C16 C17 RF OUTPUT C9 DUT Z11 Z1 C14 Z12 Z13 Z14 Z15 Z16 Z17 C10 C11 C12 Z18 Z10 C13 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C3 C8 C5 0.240″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.100″ x 0.270″ x 0.080″, Taper 0.330″ x 0.270″ Microstrip 0.120″ x 0.270″ Microstrip 0.270″ x 0.520″ x 0.140″, Taper 0.240″ x 0.520″ Microstrip 0.340″ x 0.520″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 0.060″ x 0.520″ Microstrip 0.360″ x 0.270″ Microstrip 0.060″ x 0.270″ Microstrip 0.130″ x 0.060″ Microstrip 0.300″ x 0.060″ Microstrip 0.210″ x 0.060″ Microstrip 0.600″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead 95F786 Newark B2 Long Ferrite Bead 95F787 Newark C1, C7, C13, C14 47 pF Chip Capacitors 100B470JP 500X ATC C2, C3, C11 0.8- 8.0 Gigatrim Variable Capacitors 44F3360 Newark C4, C5 11 pF Chip Capacitors (MRF9060NR1) 10 pF Chip Capacitors (MRF9060NBR1) 100B110JP 500X 100B100JP 500X ATC C6, C15, C16 10 mF, 35 V Tantalum Chip Capacitors 93F2975 Newark C8, C9 10 pF Chip Capacitors 100B100JP 500X Newark C10 3.9 pF Chip Capacitor 100B3R9CP 500X ATC C12 1.7 pF Chip Capacitor 100B1R7BP 500X ATC C17 220 mF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Inductors A04T- 5 Coilcraft N1, N2 N - Type Panel Mount, Stripline 3052- 1648- 10 Avnet WB1, WB2 15 mil Brass Wear Blocks Board Material 30 mil Glass Teflon®, εr = 2.55 Copper Clad, 2 oz Cu RF - 35- 0300 Taconic PCB Etched Circuit Board TO - 270/TO - 272 Surface/Bolt DSelectronics MRF9060NR1 MRF9060NBR1 4 RF Device Data Freescale Semiconductor C6 VGG C17 VDD B1 B2 C7 C14 L1 C1 C2 C3 C5 C15 C16 L2 WB1 WB2 CUT OUT AREA INPUT C4 C8 C9 OUTPUT C10 C11 C12 C13 MRF9060M MRF9060MB Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 5 19 50 Gps 45 η 40 VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 450 mA Two−Tone, 100 kHz Tone Spacing 16 15 35 −28 −30 14 IMD −32 13 IRL −34 12 11 930 935 940 945 950 955 −36 960 −10 −12 −14 −16 IRL, INPUT RETURN LOSS (dB) 17 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 18 η, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS −18 f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance IMD, INTERMODULATION DISTORTION (dBc) IDQ = 625 mA G ps , POWER GAIN (dB) 18.5 500 mA 18 450 mA 17.5 275 mA 17 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 16.5 10 −20 −25 IDQ = 275 mA −30 −35 450 mA −40 500 mA −45 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 625 mA −50 −55 100 1 100 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power −10 20 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz −20 −30 3rd Order −40 −50 60 Gps 18 G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 1 −15 5th Order −60 7th Order 16 40 14 30 12 20 −80 VDD = 26 Vdc IDQ = 450 mA f = 945 MHz η 10 −70 50 8 1 10 100 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power η, DRAIN EFFICIENCY (%) 19 10 0 100 MRF9060NR1 MRF9060NBR1 6 RF Device Data Freescale Semiconductor 20 60 Gps G ps , POWER GAIN (dB) 18 40 η 16 20 14 0 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz 12 −20 IMD −40 10 8 IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS −60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency, and IMD versus Output Power MTTF FACTOR (HOURS X AMPS2) 1011 1010 109 108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 7 f = 930 MHz Zo = 2 Ω f = 960 MHz Zsource f = 930 MHz Zload f = 960 MHz VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz Zsource Ω Zload Ω 930 0.63 + j0.57 1.8 + j0.84 945 0.60 + j0.41 1.7 + j0.55 960 0.57 + j0.45 1.6 + j0.36 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRF9060NR1 MRF9060NBR1 8 RF Device Data Freescale Semiconductor NOTES MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 9 NOTES MRF9060NR1 MRF9060NBR1 10 RF Device Data Freescale Semiconductor NOTES MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MRF9060NR1 MRF9060NBR1 12 RF Device Data Freescale Semiconductor MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 13 MRF9060NR1 MRF9060NBR1 14 RF Device Data Freescale Semiconductor 2X aaa M A E1 B r1 C A B GATE LEAD D1 2X ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ DRAIN LEAD b1 aaa M D C A 2 E DRAIN ID PIN 3 1 NOTE 8 E2 VIEW Y - Y c1 H F ZONE "J" DATUM PLANE A A1 A2 7 E2 Y Y C SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 1337 - 03 ISSUE C TO - 272 - 2 PLASTIC MRF9060NBR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .199 .193 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 4.90 5.05 .28 .18 1.73 1.60 .10 MRF9060NR1 MRF9060NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF9060NR1 MRF9060NBR1 Document Number: MRF9060N Rev. 10, 5/2006 16 RF Device Data Freescale Semiconductor