Freescale MRF9060NR1 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF9060N
Rev. 10, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9060NR1
MRF9060NBR1
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — - 31.5 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
945 MHz, 60 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF9060NR1
CASE 1337 - 03, STYLE 1
TO - 272- 2
PLASTIC
MRF9060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
223
1.79
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
0.56
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9060NR1
MRF9060NBR1
C6 (Minimum)
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
1
3
260
260
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
MRF9060NR1
MRF9060NBR1
Unit
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 450 mAdc)
VGS(Q)
3
3.7
5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on)
—
0.21
0.4
Vdc
gfs
—
5.3
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
101
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
53
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.5
—
pF
Characteristic
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
Dynamic Characteristics
(continued)
MRF9060NR1 MRF9060NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
17
18
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
40
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
- 31.5
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
- 14.5
-9
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Gps
—
18
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
η
—
40
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
IRL
—
- 12.5
—
dB
Functional Tests (In Freescale Test Fixture, 50 ohm system)
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
3
B1
VGG
B2
+
+
C6
C7
L1
L2
C4
RF
INPUT
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
VDD
+
+
C15
C16
C17
RF
OUTPUT
C9
DUT Z11
Z1
C14
Z12
Z13
Z14
Z15
Z16
Z17
C10
C11
C12
Z18
Z10
C13
C1
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C3
C8
C5
0.240″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.100″ x 0.270″ x 0.080″, Taper
0.330″ x 0.270″ Microstrip
0.120″ x 0.270″ Microstrip
0.270″ x 0.520″ x 0.140″, Taper
0.240″ x 0.520″ Microstrip
0.340″ x 0.520″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.060″ x 0.520″ Microstrip
0.360″ x 0.270″ Microstrip
0.060″ x 0.270″ Microstrip
0.130″ x 0.060″ Microstrip
0.300″ x 0.060″ Microstrip
0.210″ x 0.060″ Microstrip
0.600″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
95F786
Newark
B2
Long Ferrite Bead
95F787
Newark
C1, C7, C13, C14
47 pF Chip Capacitors
100B470JP 500X
ATC
C2, C3, C11
0.8- 8.0 Gigatrim Variable Capacitors
44F3360
Newark
C4, C5
11 pF Chip Capacitors (MRF9060NR1)
10 pF Chip Capacitors (MRF9060NBR1)
100B110JP 500X
100B100JP 500X
ATC
C6, C15, C16
10 mF, 35 V Tantalum Chip Capacitors
93F2975
Newark
C8, C9
10 pF Chip Capacitors
100B100JP 500X
Newark
C10
3.9 pF Chip Capacitor
100B3R9CP 500X
ATC
C12
1.7 pF Chip Capacitor
100B1R7BP 500X
ATC
C17
220 mF Electrolytic Chip Capacitor
14F185
Newark
L1, L2
12.5 nH Inductors
A04T- 5
Coilcraft
N1, N2
N - Type Panel Mount, Stripline
3052- 1648- 10
Avnet
WB1, WB2
15 mil Brass Wear Blocks
Board Material
30 mil Glass Teflon®, εr = 2.55 Copper Clad, 2 oz Cu
RF - 35- 0300
Taconic
PCB
Etched Circuit Board
TO - 270/TO - 272 Surface/Bolt
DSelectronics
MRF9060NR1 MRF9060NBR1
4
RF Device Data
Freescale Semiconductor
C6
VGG
C17
VDD
B1
B2
C7
C14
L1
C1
C2
C3
C5
C15 C16
L2
WB1
WB2
CUT OUT AREA
INPUT
C4
C8
C9
OUTPUT
C10
C11
C12
C13
MRF9060M
MRF9060MB
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
5
19
50
Gps
45
η
40
VDD = 26 Vdc
Pout = 60 W (PEP)
IDQ = 450 mA
Two−Tone, 100 kHz Tone Spacing
16
15
35
−28
−30
14
IMD
−32
13
IRL
−34
12
11
930
935
940
945
950
955
−36
960
−10
−12
−14
−16
IRL, INPUT RETURN
LOSS (dB)
17
IMD, INTERMODULATION
DISTORTION (dBc)
G ps , POWER GAIN (dB)
18
η, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−18
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc)
IDQ = 625 mA
G ps , POWER GAIN (dB)
18.5
500 mA
18
450 mA
17.5
275 mA
17
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
16.5
10
−20
−25
IDQ = 275 mA
−30
−35
450 mA
−40
500 mA
−45
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
625 mA
−50
−55
100
1
100
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
−10
20
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
−20
−30
3rd Order
−40
−50
60
Gps
18
G ps , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
1
−15
5th Order
−60
7th Order
16
40
14
30
12
20
−80
VDD = 26 Vdc
IDQ = 450 mA
f = 945 MHz
η
10
−70
50
8
1
10
100
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
η, DRAIN EFFICIENCY (%)
19
10
0
100
MRF9060NR1 MRF9060NBR1
6
RF Device Data
Freescale Semiconductor
20
60
Gps
G ps , POWER GAIN (dB)
18
40
η
16
20
14
0
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
12
−20
IMD
−40
10
8
IMD, INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency, and IMD versus Output Power
MTTF FACTOR (HOURS X AMPS2)
1011
1010
109
108
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
7
f = 930 MHz
Zo = 2 Ω
f = 960 MHz
Zsource
f = 930 MHz
Zload
f = 960 MHz
VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP
f
MHz
Zsource
Ω
Zload
Ω
930
0.63 + j0.57
1.8 + j0.84
945
0.60 + j0.41
1.7 + j0.55
960
0.57 + j0.45
1.6 + j0.36
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF9060NR1 MRF9060NBR1
8
RF Device Data
Freescale Semiconductor
NOTES
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF9060NR1 MRF9060NBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF9060NR1 MRF9060NBR1
12
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
13
MRF9060NR1 MRF9060NBR1
14
RF Device Data
Freescale Semiconductor
2X
aaa
M
A
E1
B
r1
C A B
GATE
LEAD
D1
2X
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
DRAIN
LEAD
b1
aaa
M
D
C A
2
E
DRAIN ID
PIN 3
1
NOTE 8
E2
VIEW Y - Y
c1
H
F
ZONE "J"
DATUM
PLANE
A
A1
A2
7
E2
Y
Y
C
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 1337 - 03
ISSUE C
TO - 272 - 2
PLASTIC
MRF9060NBR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
E
E1
E2
F
b1
c1
r1
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.928
.932
.810 BSC
.438
.442
.248
.252
.241
.245
.025 BSC
.199
.193
.007
.011
.063
.068
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
23.57
23.67
20.57 BSC
11.12
11.23
6.30
6.40
6.12
6.22
0.64 BSC
4.90
5.05
.28
.18
1.73
1.60
.10
MRF9060NR1 MRF9060NBR1
RF Device Data
Freescale Semiconductor
15
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MRF9060NR1 MRF9060NBR1
Document Number: MRF9060N
Rev. 10, 5/2006
16
RF Device Data
Freescale Semiconductor
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