ON MUN5211DW1T1G Dual bias resistor transistor Datasheet

MUN5211DW1T1G Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1G
series, two BRT devices are housed in the SOT−363 package which is
ideal for low power surface mount applications where board space is
at a premium.
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(3)
(2)
R1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Q2
R2
(4)
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
6
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/°C
670 (Note 1)
490 (Note 2)
°C/W
Symbol
Max
Unit
PD
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
RqJA
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance,
Junction-to-Lead
RqJL
188 (Note 1)
208 (Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
(6)
1
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Symbol
R1
(5)
MAXIMUM RATINGS
Rating
R2
Q1
Features
•
•
•
•
(1)
xx M G
G
1
xx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 8
1
Publication Order Number:
MUN5211DW1T1/D
MUN5211DW1T1G Series
DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping†
MUN5211DW1T1G
SOT−363
(Pb−Free)
7A
10
10
3000 / Tape & Reel
MUN5212DW1T1G
SOT−363
(Pb−Free)
7B
22
22
3000 / Tape & Reel
MUN5213DW1T1G
SOT−363
(Pb−Free)
7C
47
47
3000 / Tape & Reel
MUN5214DW1T1G
SOT−363
(Pb−Free)
7D
10
47
3000 / Tape & Reel
MUN5215DW1T1G
SOT−363
(Pb−Free)
7E
10
∞
3000 / Tape & Reel
MUN5216DW1T1G
SOT−363
(Pb−Free)
7F
4.7
∞
3000 / Tape & Reel
MUN5230DW1T1G
SOT−363
(Pb−Free)
7G
1.0
1.0
3000 / Tape & Reel
MUN5231DW1T1G
SOT−363
(Pb−Free)
7H
2.2
2.2
3000 / Tape & Reel
MUN5232DW1T1G
SOT−363
(Pb−Free)
7J
4.7
4.7
3000 / Tape & Reel
MUN5233DW1T1G
SOT−363
(Pb−Free)
7K
4.7
47
3000 / Tape & Reel
MUN5234DW1T1G
SOT−363
(Pb−Free)
7L
22
47
3000 / Tape & Reel
MUN5235DW1T1G
SOT−363
(Pb−Free)
7M
2.2
47
3000 / Tape & Reel
MUN5236DW1T1G
SOT−363
(Pb−Free)
7N
100
100
3000 / Tape & Reel
MUN5237DW1T1G
SOT−363
(Pb−Free)
7P
47
22
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MUN5211DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
OFF CHARACTERISTICS
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
MUN5211DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5237DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5211DW1T1G
MUN5212DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5213DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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4
VCE(sat)
VOL
Vdc
Vdc
MUN5211DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
VOH
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5230DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
Resistor Ratio MUN5211DW1T1G/MUN5212DW1T1G/
MUN5213DW1T1G/MUN5236DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G/MUN5216DW1T1G
MUN5230DW1T1G/MUN5231DW1T1G/MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5237DW1T1G
Vdc
R1
R1/R2
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ALL MUN5211DW1T1G SERIES DEVICES
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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5
150
kW
MUN5211DW1T1G Series
1
1000
IC/IB = 10
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1G
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
1
0.1
0.01
0.001
50
TA=-25°C
10
VO = 5 V
0
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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6
50
10
MUN5211DW1T1G Series
1000
1
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1G
IC/IB = 10
25°C
TA=-25°C
0.1
75°C
0.01
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
0.001
0
20
IC, COLLECTOR CURRENT (mA)
50
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
100
2
1
75°C
25°C
TA=-25°C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
3
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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7
MUN5211DW1T1G Series
10
1000
IC/IB = 10
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1G
1
25°C
TA=-25°C
75°C
0.1
VCE = 10 V
TA=75°C
25°C
-25°C
100
0.01
0
10
50
20
40
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
1
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
TA=-25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
Figure 14. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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8
MUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1G
300
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
-25°C
150
100
50
0
80
1
2
4
6
Figure 17. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
10
VO = 5 V
1
50
25°C
-25°C
0
Figure 19. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
Figure 20. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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9
10
MUN5211DW1T1G Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 24. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
9
10
Figure 25. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 23. DC Current Gain
4.5
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215DW1T1G
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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10
50
MUN5211DW1T1G Series
1
1000
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
TA = −25°C
25°C
100
10
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
100
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
TA = −25°C
1
0.1
0.01
0.001
50
Figure 29. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 30. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
100
Figure 28. DC Current Gain
4.5
4
VCE = 10 V
75°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5216DW1T1G
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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11
50
MUN5211DW1T1G Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
25°C
TA = −25°C
VCE = 10 V
1
50
75°C
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 34. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 35. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
4
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
http://onsemi.com
12
50
MUN5211DW1T1G Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5231DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
TA = −25°C
VCE = 10 V
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 37. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 39. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 40. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 38. DC Current Gain
4.5
0
25°C
75°C
10
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 41. Input Voltage versus Output Current
http://onsemi.com
13
50
MUN5211DW1T1G Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
TA = −25°C
10
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
5
4
3
2
1
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 44. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 45. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 43. DC Current Gain
6
0
25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 46. Input Voltage versus Output Current
http://onsemi.com
14
50
MUN5211DW1T1G Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233DW1T1G
75°C
−25°C
25°C
0.01
0.001
0
5
20
10
15
25
IC, COLLECTOR CURRENT (mA)
75°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 47. VCE(sat) versus IC
f = 1 MHz
IE = 0 V
TA = 25°C
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 49. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 50. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
3
100
Figure 48. DC Current Gain
4
3.5
25°C
10
1
30
TA = −25°C
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 51. Input Voltage versus Output Current
http://onsemi.com
15
25
MUN5211DW1T1G Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
75°C
−25°C
0.01
0.001
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5234DW1T1G
0
5
25°C
10
15
20
25
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
100
IC, COLLECTOR CURRENT (mA)
Figure 53. DC Current Gain
TBD
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 52. VCE(sat) versus IC
TBD
25°C
10
1
30
TA = −25°C
TBD
IC, COLLECTOR CURRENT (mA)
Figure 56. Input Voltage versus Output Current
http://onsemi.com
16
MUN5211DW1T1G Series
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235DW1T1G
75°C
0.1
−25°C
25°C
0.01
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 57. VCE(sat) versus IC
f = 1 MHz
IE = 0 V
TA = 25°C
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
75°C
1
TA = −25°C
0.1
0.01
0.001
50
25°C
VO = 5 V
0
Figure 59. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
75°C
1
25°C
TA = −25°C
VO = 0.2 V
0.1
0
9
10
Figure 60. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
3.5
100
Figure 58. DC Current Gain
4.5
4
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 61. Input Voltage versus Output Current
http://onsemi.com
17
50
MUN5211DW1T1G Series
1000
1
75°C
75°C
25°C
0.1
0.01
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
VCE = 10 V
−25°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5236DW1T1G
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
1
25°C
TA = −25°C
0.1
0.01
0.001
50
Figure 64. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
10
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 65. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 63. DC Current Gain
5
0
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 66. Input Voltage versus Output Current
http://onsemi.com
18
50
MUN5211DW1T1G Series
1000
1
VCE = 10 V
IC/IB = 10
−25°C
75°C
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5237DW1T1G
25°C
0.01
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 67. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 69. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
10
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 70. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 68. DC Current Gain
5
0
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 71. Input Voltage versus Output Current
http://onsemi.com
19
50
MUN5211DW1T1G Series
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
D
e
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
DIM
A
A1
A3
b
C
D
E
e
L
HE
4
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
A3
C
A1
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
M
A
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
SOLDERING FOOTPRINT*
0.50
0.0197
L
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
SC−88/SC70−6/SOT−363
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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MUN5211DW1T1/D