Diode Semiconductor Korea ZENER DIODES DL4728 - - - DL4764 POWER DISSIPATION: 1.0 W FEATURES Silicon planar power zener diodes MELF For use in stabilizing and clipping circuits with high power rating. Standard zener voltage tolerance is ±10%. Add Cathode indification φ2.4±0.15 suffix "A" for ±5% tolerance. other zener voltage and tolerances are available upon request. MECHANICAL DATA 0.4±0.1 Case:MELF, glass case 5.3±0.2 Terminals: solderable per MIL-STD-202, method 208 Polarity: cathode band Marking: type number Approx. weight: 0.25 grams. Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. SYMBOL VALUE UNIT PDiss 1.01) W Z-current IZ PV/VZ mA Junction temperature TJ 175 Storage temperature range Ts -55---+175 RThJA 170 K/W TYP MAX UNIT 1.2 V Zener current (see Table "Characteristics") Pow er dissipation @ Tamb 50 Junction ambient I=9.5mm(3/8 ), TL=constant SYMBOL Forw ard voltage at IF=200mA VF 1)Valid provided that electrodes re kept at ambient temperature. MIN 1) www.diode.kr Diode Semiconductor Korea ELECTRICAL CHARACTERISTICS (TA=25 ) Max surge current 8.3ms Maximum regulator current 2) @V R IR@Tamb =25 IZM @Tamb =50 (μA ) (V ) (mA ) (mA ) 1.0 100 1 1380 276 400 1.0 100 1 1260 252 9 400 1.0 50 1 1190 234 58 9 400 1.0 10 1 1070 217 53 8 500 1.0 10 1 970 193 5.1 49 7 550 1.0 10 1 890 178 DL4734 5.6 45 5 600 1.0 10 2 810 462 DL4735 6.2 41 2 700 1.0 10 3 730 146 DL4736 6.8 37 3.5 700 1.0 10 4 660 133 DL4737 7.5 34 4.0 700 0.5 10 5 605 121 DL4738 8.2 31 4.5 700 0.5 10 6 550 110 DL4739 9.1 28 5.0 700 0.5 10 7 500 100 DL4740 10 25 7 700 0.25 10 7.6 454 91 DL4741 11 23 8 700 0.25 5 8.4 414 83 DL4742 12 21 9 700 0.25 5 9.1 380 76 DL4743 13 19 10 700 0.25 5 9.9 344 69 DL4744 15 17 14 700 0.25 5 11.4 304 61 DL4745 16 15.5 16 700 0.25 5 12.2 285 57 DL4746 18 14 20 750 0.25 5 13.7 250 50 DL4747 20 12.5 22 750 0.25 5 15.2 225 45 DL4748 22 11.5 23 750 0.25 5 16.7 205 41 DL4749 24 10.5 25 750 0.25 5 18.2 190 38 DL4750 27 9.5 35 750 0.25 5 20.6 170 34 DL4751 30 8.5 40 1000 0.25 5 22.8 150 30 Nominal zener voltage 1) Test current V z@IZT IZT IZT @Z ZT Z ZK@IZK IZK IR (V ) (mA ) (Ω) (Ω) (m A) DL4728 3.3 76 10 400 DL4729 3.6 69 10 DL4730 3.9 64 DL4731 4.3 DL4732 4.7 DL4733 Maximum dynamic impedance Maximum reverse leakage current Type DL4752 33 7.5 45 1000 0.25 5 25.1 135 27 DL4753 36 7.0 50 1000 0.25 5 27.4 125 25 DL4754 39 6.5 60 1000 0.25 5 29.7 115 23 DL4755 43 6.0 70 1500 0.25 5 32.7 110 22 DL4756 47 5.5 80 1500 0.25 5 35.8 95 19 DL4757 51 5.0 95 1500 0.25 5 38.8 90 18 DL4758 56 4.5 110 2000 0.25 5 42.6 80 16 DL4759 62 4.0 125 2000 0.25 5 47.1 70 14 DL4760 68 3.7 150 2000 0.25 5 51.7 65 13 DL4761 75 3.3 175 2000 0.25 5 56.0 60 12 DL4762 82 3.0 200 3000 0.25 5 62.2 55 11 DL4763 91 2.8 250 3000 0.25 5 69.2 50 10 DL4764 100 2.5 350 3000 0.25 5 79.0 45 9 1)Based on dc_m easurem ent at theral equilibrium while m aitaining the lead tem perature (TL) at 30 2)Valid prov ided that electrodes at a distance of 10 m m f orm case kept at am bient tem perature. *)Additionnal m easurem ent of v oltage gruup 9v 1 to 75 at 95% V ZMIN 35nA at TJ25 +1 ,9.5m m (3/8")f rom the D iode body . www.diode.kr Diode Semiconductor Korea DL4728 - - - DL4764 FIG.1 -- BREAKDOWN CHARACTERISTICS mA 5 100 10 15 20 25 30 V 80 IZ 60 40 20 DL4750 DL4749 DL4748 DL4747 DL4744 DL4741 DL4742 DL4739 DL4735 DL4733 DL4732 DL4728 DL4731 0 VZ FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE W 1.0 0.8 Ptot 0.6 0.4 0.2 0 0 100 200℃ Tamb www.diode.kr