NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transistors Darlington, General Purpose Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT–23 type surface mount case designed for general–purpose applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350K/W Note 1. Mounted on a ceramic substrate of .590 (15mm) x .590 (15mm) x .027 (0.7mm). Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Current ICBO VCBO = 30V – – 100 nA Emitter–Base Current IEBO VEB = 10V – – 100 nA Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA 30 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA 40 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100nA 10 – – V Collector–Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 0.1mA – – 1 V Base–Emitter Saturation Voltage VBE(sat) IC = 100mA, IB = 0.1mA – – 1.5 V IC = 1mA, VCE = 5V 4000 – – IC = 10mA, VCE = 5V 10000 – – IC = 100mA, VCE = 5V 20000 – – DC Current Gain hFE Transition Frequency fT IC = 30mA, VCE = 5V, f = 100MHz – 220 – MHz Collector Capacitance Cc IE = 0, VCB = 30V – 3.5 – pF Schematic Diagram C C B B E E NPN PNP .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)