HANBit HMF1M32M4GL FLASH-ROM MODULE 4MByte (1M x 32-Bit),72pin-SIMM, 5V Part No. HMF1M32M4GL GENERAL DESCRIPTION The HMF1M32M4GL is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of four 1M x 8 FROM mounted on a 72 -pin, single-sided, FR4-printed circuit board. The HMF1M32M4GL is entirely pin and command set compatible with JEDEC single-power-supply flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/WE0, /WE1, /WE2, /WE3) are used to enable the module’s 8bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standb y mode, system designer can get low-power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. PIN ASSIGNMENT FEATURES w Access time : 75, 90 and 120ns w High-density 4MByte design w High-reliability, low-power design PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 Vss 25 DQ17 49 /BANK-E0 2 NC 26 DQ18 50 A18 3 DQ0 27 DQ19 51 A17 w Single + 5V ± 0.5V power supply 4 DQ1 28 DQ20 52 A16 w Easy memory expansion 5 DQ2 29 DQ21 53 A15 6 DQ3 30 Vcc 54 A14 7 DQ4 31 DQ22 55 A13 8 DQ5 32 DQ23 56 A12 w Low profile 72-pin SIMM 9 DQ6 33 /WE2 57 A11 w Minimum 1,000,000 write/erase cycle 10 Vcc 34 NC 58 A10 11 DQ7 35 DQ24 59 Vcc 12 /WE0 36 DQ25 60 A9 w Sector group protection 13 RY-/BY 37 DQ26 61 A8 w Temporary sector group unprotection 14 DQ8 38 DQ27 62 A7 w The used device is AM29F080 15 DQ9 39 Vss 63 A6 16 DQ10 40 DQ28 64 A5 17 DQ11 41 DQ29 65 A4 18 DQ12 42 DQ30 66 A3 19 DQ13 43 DQ31 67 A2 20 DQ14 44 /WE3 68 A1 21 DQ15 45 NC 69 A0 NC w All inputs and outputs are TTL-compatible w FR4-PCB design w Sector erase architecture OPTIONS MARKING w Timing 75ns access -75 90ns access -90 22 /WE1 46 /Reset 70 120ns access -120 23 NC 47 A19 71 NC 24 DQ16 48 /OE 72 Vss w Packages 72-pin SIMM URL: www.hbe.co.kr REV.02(August,2002) M 72-PIN SIMM TOP VIEW 1 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL FUNCTIONAL BLOCK DIAGRAM 32 DQ0 - DQ31 20 A0 - A19 A0-19 DQ 0-7 /WE0 /WE U1 /OE /CE RY-BY /Reset A0-19 DQ 8-15 /WE1 /WE U2 /OE /CE RY-BY /Reset A0-19 /WE2 /WE DQ16-23 U3 /OE /CE RY-BY /Reset A0-19 DQ24-31 /WE3 /WE /OE /OE /BANK-E0 RY-/BY /Reset URL: www.hbe.co.kr REV.02(August,2002) U4 /CE RY-BY /Reset 2 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +125oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ±5% device Supply Voltages VCC 4.75V 5.25V Vcc for ± 10% device Supply Voltages Vcc 4.5V 5.5V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read(1) /CE = VIL, /OE=VIH, ICC1 40 mA /CE = VIL, /OE=VIH ICC2 60 mA /CE= VIH ICC3 1.0 mA 4.2 V 2.4 V Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage VLKO 3.2 Notes: URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL 1. The Icc current listed is typically less than than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc =Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. COMMENTS MAX. Excludes 00H programming Sector Erase Time - 1 8 sec prior to erasure Byte Programming Time - 7 300 Excludes system-level µs overhead Excludes system-level Chip Programming Time - 7.2 21.6 sec overhead CAPACITANCE PARAMETER PARAMETER SYMBOL DESCRIPTION CIN TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC STANDARD tAVAV tRC tAVQV tACC DESCRIPTION -75 -90 UNIT Min 70 90 ns Max 70 90 ns Max 70 90 ns TEST SETUP Read Cycle Time /CE = V IL Address to Output Delay /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 40 40 ns tEHQZ tDF Chip Enable to Output High-Z Max 20 20 ns tGHQZ tDF Output Enable to Output High-Z Max 20 20 ns tAXQX tQH Min 0 0 ns Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First TEST SPECIFICATIONS URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL TEST CONDITION 75 ALL OTHERS Output load UNIT 1TTL gate Output load capacitance, 30 100 pF 5 20 ns 0.0 - 3.0 0.45-2.4 V Input timing measurement reference levels 1.5 0.8, 2.0 V Output timing measurement reference levels 1.5 0.8, 2.0 V CL (Including jig capacitance) Input rise and full times Input pulse levels 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION -75 -90 UNIT Min 70 90 ns Address Setup Time Min 0 0 ns tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns tGHWL tGHWL Read Recover Time Before Write Min 0 0 ns tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns JEDEC STANDARD tAVAV tWC Write Cycle Time tAVWL tAS tWLAX URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Vcc set up time Min 50 50 µs -75 -90 UNIT tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tWC Write Cycle Time Min 70 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns tGHWL tGHWL Read Recover Time Before Write Min 0 0 ns tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF1M32M4GL PACKAGE DIMENSIONS 108mm 3.2 6.35 mm 72 1 2.03 mm 6.35 mm 1.02 mm 1.27 mm 3.34 mm 95.25 mm 2.54 mm MIN 0.25 mm MAX 1.27 1.27(±0.08) Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF1M32M4GL-75 4MByte 1M×32bit 72Pin-SIMM HMF1M32M4GL-90 4MByte 1M×32bit HMF1M32M4GL-120 4MByte 1M×32bit URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 5.0V 75ns 72Pin-SIMM 4EA 5.0V 90ns 72Pin-SIMM 4EA 5.0V 120ns 11 Number HANBit Electronics Co., Ltd.