Sirectifier BTA10-1200 Discrete triac Datasheet

BTA10
Discrete Triacs(Isolated)
T2
T2
G
T2
T1
BTA10-200
BTA10-400
BTA10-600
BTA10-800
BTA10-1000
BTA10-1200
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
G
T1
VDRM/RRM VDSM/RSM
V
V
200
300
400
500
600
700
800
900
1000
1100
1200
1300
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I²t
dI/dt
PG(AV)
Tstg
Tj
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
V
Unit
Parameter
RMS on-state current (full sine wave)
TO-220AB
Tc = 105°C
10
A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
100
105
A
55
A²s
I²t Value for fusing
Critical rate of rise of on-state current
_ 100 ns
I G = 2 x I GT , tr <
tp = 10 ms
VDSM/V RSM Non repetitive surge peak off-state
voltage
IGM
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Peak gate current
F = 120 Hz
Tj = 125°C
50
A/µs
tp = 10 ms
Tj = 25°C
VDRM/VRRM
V
tp = 20 µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
Average gate p ower diss ipation
+ 100
Storage junction temperature range
Operating junction temperature range
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
SNUBBERLESS and LOGIC LEVEL(3 Quadrants)
■
Symbol
IGT
VGT
Test Conditions
VD = 12 V
VGD
VD = VDRM
IH
IT = 500 mA
IL
dV/dt
(dI/dt)c
P1
Quadrant
RL = 33 Ω
RL = 3.3 kΩ
Tj = 125°C
BTA
Unit
CW
BW
35
50
mA
I - II - III
MAX.
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.2
V
I - III
IG = 1.2 IGT
MAX.
35
50
mA
MAX.
50
70
mA
60
80
II
VD = 67 % VDRM gate open Tj = 125°C
MIN.
500
1000
V/µs
Without snubber
MIN.
5.5
9.0
A/ms
Tj = 125°C
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Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
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BTA10
Discrete Triacs(Isolated)
■
STANDARD (4 Quadrants)
Symbol
Test Conditions
IGT
VD = 12 V
VGT
VGD
VD = VDRM
IH
IT = 500 mA
IL
IG = 1.2 IGT
Quadrant
RL = 33 Ω
RL = 3.3 Ω
Value
Unit
I - II - III
IV
MAX.
50
100
mA
ALL
MAX.
1.3
V
ALL
MIN.
0.2
V
MAX.
50
mA
MAX.
50
Tj = 125°C
I - III - IV
II
dV/dt
(dV/dt)c
mA
100
VD = 67 % VDRM gate open Tj = 125°C
MIN.
400
V/µs
(dI/dt)c =4.4 A/ms
MIN.
10
V/µs
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
tp = 380 µs
Value
Unit
1.55
V
VTM
ITM = 10 A
Vto
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125°C
MAX.
40
mΩ
IDRM
VDRM = VRRM
Tj = 25°C
5
µA
1
mA
Tj = 25°C
IRRM
Tj = 125°C
MAX.
MAX.
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
1.5
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
200 V ~~ 100 V
BTA10
X
X
Sensitivity
Type
Package
50 mA
Standard
TO-220AB
Weight
Base
quantity
Packing
mode
2.3 g
250
Bulk
OTHER INFORMATION
Part Number
BTA10
P2
Marking
BTA10
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
BTA10
Discrete Triacs(Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
F ig.2:
R MS on-state current vers us cas e
temperature (full cycle).
P (W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
IT (R MS ) (A )
IT (R MS ) (A )
0
1
2
3
4
5
6
7
8
9
10
F ig. 3 : R elative variation of thermal impeda nce
versus pulse duration.
1E +0
12
11
10
9
8
7
6
5
4
3
2
1
0
B TB
B TA
T c (°C )
0
25
F ig. 4 :
values ).
50
On-s tate
75
100
cha racteris tics
125
(maximum
IT M (A )
K =[Zth/R th]
100
1E -1
T j max
T j max.
V to = 0.85
V
R d = 40 W
m
Zth(j-c )
10
Zth(j-a)
T j=25°C
tp (s )
1E -2
1E -3
1E -2
1E -1
V T M (V )
1E +0
1E +1
1E +2 5E +2
F ig. 5 :
S urge peak on-state current vers us
number of cycles .
1
0.5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
F ig. 6 :
Non-repetitive s urge pea k on-s tate
current for a s inus oidal puls e with width
tp < 10ms, and corres ponding value of I²t.
IT S M (A ),I²t (A ²s )
IT S M (A )
110
100
90
80
70
60
50
40
30
20
10
0
1.0
1000
T j initial=25°C
t=20ms
dI/dt limitation:
50A /µs
One cycle
Non repetitive
T j initial=25°C
IT S M
100
I²t
R epetitive
T c=95°C
tp (ms )
Number of ycles
c
1
10
100
1000
10
0.01
0.10
1.00
10.00
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BTA10
Discrete Triacs(Isolated)
F ig. 7 : R ela tive variation of gate trigger current,
holding current and latching current vers us
junction temperature (typical values).
2.5
IG T,IH,IL [T j] / IG T ,IH,IL [T j=25°C ]
2.0
C
1.6
IG T
1.4
1.5
B
1.2
IH & IL
B W/C W
1.0
0.8
0.5
0.6
T j(°C )
0.0
-40
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
1.8
2.0
1.0
F ig.8 : R ela tive variation of critica l rate of decreas e
of main current versus (dV /dt)c (typical values).
-20
0
20
40
60
80
100
120
140
0.4
0.1
(dV /dt)c (V /µs )
1.0
10.0
100.0
F ig. 9 : R elative varia tion of critical rate of
decreas e of main current vers us junction
temperature.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
3
2
1
0
T j (°C )
0
25
50
75
100
125
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P4
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Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
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