NSC LM6132BIMNOPB Lm6132/lm6134 dual and quad low power 10 mhz rail-to-rail i/o operational amplifier Datasheet

LM6132
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SNOS751D – APRIL 2000 – REVISED FEBRUARY 2013
LM6132/LM6134 Dual and Quad Low Power 10 MHz Rail-to-Rail I/O Operational Amplifiers
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FEATURES
DESCRIPTION
•
•
•
•
•
•
•
•
•
•
The LM6132/34 provides new levels of speed vs.
power performance in applications where low voltage
supplies or power limitations previously made
compromise necessary. With only 360 μA/amp supply
current, the 10 MHz gain-bandwidth of this device
supports new portable applications where higher
power devices unacceptably drain battery life.
1
2
(For 5V Supply, Typ Unless Noted)
Rail-to-Rail Input CMVR −0.25V to 5.25V
Rail-to-Rail Output Swing 0.01V to 4.99V
High Gain-Bandwidth, 10 MHz at 20 kHz
Slew Rate 12 V/μs
Low Supply Current 360 μA/Amp
Wide Supply Range 2.7V to over 24V
CMRR 100 dB
Gain 100 dB with RL = 10k
PSRR 82 dB
APPLICATIONS
•
•
•
•
•
Battery Operated Instrumentation
Instrumentation Amplifiers
Portable Scanners
Wireless Communications
Flat Panel Display Driver
The LM6132/34 can be driven by voltages that
exceed both power supply rails, thus eliminating
concerns over exceeding the common-mode voltage
range. The rail-to-rail output swing capability provides
the maximum possible dynamic range at the output.
This is particularly important when operating on low
supply voltages. The LM6132/34 can also drive large
capacitive loads without oscillating.
Operating on supplies from 2.7V to over 24V, the
LM6132/34 is excellent for a very wide range of
applications, from battery operated systems with
large bandwidth requirements to high speed
instrumentation.
Connection Diagram
Figure 1. 8-Pin SOIC/PDIP (Top View)
See Package Number D and P
Figure 2. 14-Pin SOIC/PDIP (Top View)
See Package Number D and NFF0014A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2000–2013, Texas Instruments Incorporated
LM6132
SNOS751D – APRIL 2000 – REVISED FEBRUARY 2013
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Absolute Maximum Ratings (1) (2)
ESD Tolerance (3)
2500V
Differential Input Voltage
15V
(V+)+0.3V, (V−)−0.3V
Voltage at Input/Output Pin
Supply Voltage (V+–V−)
35V
Current at Input Pin
±10 mA
Current at Output Pin (4)
±25 mA
Current at Power Supply Pin
50 mA
Lead Temp. (soldering, 10 sec.)
260°C
−65°C to +150°C
Storage Temperature Range
Junction Temperature (5)
(1)
(2)
(3)
(4)
(5)
150°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical characteristics.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Human body model, 1.5 kΩ in series with 100 pF.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) − TA)/θJA. All numbers apply for packages soldered directly into a PC board.
Operating Ratings (1)
1.8V ≤ V+ ≤ 24V
Supply Voltage
−40°C ≤ TJ ≤ +85°C
Junction Temperature Range
LM6132, LM6134
Thermal resistance (θJA)
P Package, 8-pin PDIP
115°C/W
D Package, 8-pin SOIC
193°C/W
NFF0014A Package, 14-pin PDIP
D Package, 14-pin SOIC
(1)
2
81°C/W
126°C/W
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical characteristics.
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5.0V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C, V+ = 5.0V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2.
Boldface limits apply at the temperature extremes
Symbol
Parameter
Conditions
LM6134AI
LM6132AI
Limit
LM6134BI
LM6132BI
Limit
2
4
6
8
110
140
300
180
350
nA
max
3.4
30
50
30
50
nA
max
Typ
(1)
(2)
VOS
Input Offset Voltage
TCVOS
Input Offset Voltage Average Drift
IB
Input Bias Current
IOS
Input Offset Current
RIN
Input Resistance, CM
CMRR
Common Mode Rejection Ratio
0.25
104
100
75
70
75
70
0V ≤ VCM ≤ 5V
80
60
55
60
55
±2.5V ≤ V+ ≤ ±12V
82
78
75
78
75
dB
min
−0.25
5.25
0
5.0
0
5.0
V
100
25
8
15
6
V/mV
min
4.992
4.98
4.93
4.98
4.93
V
min
0.007
0.017
0.019
0.017
0.019
V
max
4.952
4.94
4.85
4.94
4.85
V
min
0.032
0.07
0.09
0.07
0.09
V
max
4.923
4.90
4.85
4.90
4.85
V
min
0.051
0.095
0.12
0.095
0.12
V
max
4
2
2
2
1
mA
min
3.5
1.8
1.8
1.8
1
mA
min
3
2
1.6
2
1
mA
min
3.5
1.8
1.3
1.8
1
mA
min
400
450
400
450
μA
max
Power Supply Rejection Ratio
VCM
Input Common-Mode Voltage Range
AV
Large Signal Voltage Gain
RL = 10k
VO
Output Swing
100k Load
10k Load
5k Load
Output Short Circuit Current
LM6132
Sourcing
Sinking
ISC
Output Short Circuit Current
LM6134
Sourcing
Sinking
IS
(1)
(2)
Supply Current
MΩ
0V ≤ VCM ≤ 4V
PSRR
ISC
mV
max
μV/C
5
0V ≤ VCM ≤ 5V
Units
(2)
Per Amplifier
360
dB
min
Typical Values represent the most likely parametric normal.
All limits are guaranteed by testing or statistical analysis.
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5.0V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C, V+ = 5.0V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2.
Boldface limits apply at the temperature extremes
Symbol
Parameter
Conditions
LM6134AI
LM6132AI
Limit
LM6134BI
LM6132BI
Limit
14
8
7
8
7
V/μs
min
10
7.4
7
7.4
7
MHz
min
Typ
(1)
(2)
Units
(2)
SR
Slew Rate
±4V @ VS = ±6V
RS < 1 kΩ
GBW
Gain-Bandwidth Product
f = 20 kHz
θm
Phase Margin
RL = 10k
33
deg
Gm
Gain Margin
RL = 10k
10
dB
en
Input Referred Voltage Noise
f = 1 kHz
27
nV/√Hz
in
Input Referred Current Noise
f = 1 kHz
0.18
pA/√Hz
(1)
(2)
Typical Values represent the most likely parametric normal.
All limits are guaranteed by testing or statistical analysis.
2.7V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C, V+ = 2.7V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2.
Boldface limits apply at the temperature extreme
Symbol
Parameter
Conditions
Typ
(1)
LM6134AI
LM6132AI
Limit
LM6134BI
LM6132BI
Limit
2
8
6
12
(2)
0.12
Units
(2)
VOS
Input Offset Voltage
IB
Input Bias Current
IOS
Input Offset Current
2.8
nA
RIN
Input Resistance
134
MΩ
CMRR
Common Mode Rejection Ratio
82
dB
0V ≤ VCM ≤ 2.7V
0V ≤ VCM ≤ 2.7V
+
±1.35V ≤ V ≤ ±12V
PSRR
Power Supply Rejection Ratio
VCM
Input Common-Mode Voltage Range
AV
Large Signal Voltage Gain
RL = 10k
VO
Output Swing
RL = 100k
IS
(1)
(2)
Supply Current
Per Amplifier
90
mV
max
nA
80
dB
2.7
0
2.7
0
0.03
0.08
0.112
0.08
0.112
V
max
2.66
2.65
2.25
2.65
2.25
V
min
100
V
V/mV
μA
330
Typical Values represent the most likely parametric normal.
All limits are guaranteed by testing or statistical analysis.
2.7V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C, V+ = 2.7V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2.
Symbol
Parameter
Conditions
Typ
(1)
LM6134AI
LM6132AI
Limit
(2)
LM6134BI
LM6132BI
Limit
Units
(2)
GBW
Gain-Bandwidth Product
RL = 10k, f = 20 kHz
7
MHz
θm
Phase Margin
RL = 10k
23
deg
Gm
Gain Margin
12
dB
(1)
(2)
4
Typical Values represent the most likely parametric normal.
All limits are guaranteed by testing or statistical analysis.
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24V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C, V+ = 24V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2.
Boldface limits apply at the temperature extreme
Symbol
Parameter
Conditions
Typ
(1)
LM6134AI
LM6132AI
Limit
LM6134BI
LM6132BI
Limit
3
5
7
9
(2)
1.7
Units
(2)
VOS
Input Offset Voltage
IB
Input Bias Current
IOS
Input Offset Current
4.8
nA
RIN
Input Resistance
210
MΩ
CMRR
Common Mode Rejection Ratio
80
dB
0V ≤ VCM ≤ 24V
0V ≤ VCM ≤ 24V
+
2.7V ≤ V ≤ 24V
PSRR
Power Supply Rejection Ratio
VCM
Input Common-Mode Voltage Range
AV
Large Signal Voltage Gain
RL = 10k
VO
Output Swing
RL = 10k
IS
(1)
(2)
Supply Current
125
Per Amplifier
nA
82
−0.25
24.25
mV
max
dB
0
24
0
24
102
V min
V max
V/mV
0.075
23.86
0.15
23.8
0.15
23.8
390
450
490
450
490
V
max
V
min
μA
max
Typical Values represent the most likely parametric normal.
All limits are guaranteed by testing or statistical analysis.
24V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C, V+ = 24V, V− = 0V, VCM = VO = V+/2 and RL > 1 MΩ to V+/2.
Symbol
Parameter
Conditions
Typ
(1)
LM6134AI
LM6132AI
Limit
(2)
LM6134BI
LM6132BI
Limit
Units
(2)
GBW
Gain-Bandwidth Product
RL = 10k, f = 20 kHz
11
MHz
θm
Phase Margin
RL = 10k
23
deg
Gm
Gain Margin
RL = 10k
12
dB
THD + N
Total Harmonic Distortion and Noise
AV = +1, VO = 20VP-P
f = 10 kHz
0.0015
%
(1)
(2)
Typical Values represent the most likely parametric normal.
All limits are guaranteed by testing or statistical analysis.
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Typical Performance Characteristics
TA = 25°C, RL = 10 kΩ unless otherwise specified
6
Supply Current
vs.
Supply Voltage
Offset Voltage
vs.
Supply Voltage
Figure 3.
Figure 4.
dVOS
vs.
VCM
dVOS
vs.
VCM
Figure 5.
Figure 6.
dVOS
vs.
VCM
IBIAS
vs.
VCM
Figure 7.
Figure 8.
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Typical Performance Characteristics (continued)
TA = 25°C, RL = 10 kΩ unless otherwise specified
IBIAS
vs.
VCM
IBIAS
vs.
VCM
Figure 9.
Figure 10.
Input Bias Current
vs.
Supply Voltage
Negative PSRR
vs.
Frequency
Figure 11.
Figure 12.
Positive PSSR
vs.
Frequency
dVOS
vs.
Output Voltage
Figure 13.
Figure 14.
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Typical Performance Characteristics (continued)
TA = 25°C, RL = 10 kΩ unless otherwise specified
8
dVOS
vs.
Output Voltage
dVOS
vs.
Output Voltage
Figure 15.
Figure 16.
CMRR
vs.
Frequency
Output Voltage
vs.
Sinking Current
Figure 17.
Figure 18.
Output Voltage
vs.
Sinking Current
Output Voltage
vs.
Sinking Current
Figure 19.
Figure 20.
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Typical Performance Characteristics (continued)
TA = 25°C, RL = 10 kΩ unless otherwise specified
Output Voltage
vs.
Sourcing Current
Output Voltage
vs.
Sourcing Current
Figure 21.
Figure 22.
Output Voltage
vs.
Sourcing Current
Noise Voltage
vs.
Frequency
Figure 23.
Figure 24.
Noise Current
vs.
Frequency
NF
vs.
Source Resistance
Figure 25.
Figure 26.
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Typical Performance Characteristics (continued)
TA = 25°C, RL = 10 kΩ unless otherwise specified
10
Gain and Phase
vs.
Frequency
Gain and Phase
vs.
Frequency
Figure 27.
Figure 28.
Gain and Phase
vs.
Frequency
GBW
vs.
Supply Voltage at 20 kHz
Figure 29.
Figure 30.
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LM6132/34 APPLICATION INFORMATION
The LM6132 brings a new level of ease of use to op amp system design.
With greater than rail-to-rail input voltage range concern over exceeding the common-mode voltage range is
eliminated.
Rail-to-rail output swing provides the maximum possible dynamic range at the output. This is particularly
important when operating on low supply voltages.
The high gain-bandwidth with low supply current opens new battery powered applications, where high power
consumption, previously reduced battery life to unacceptable levels.
To take advantage of these features, some ideas should be kept in mind.
ENHANCED SLEW RATE
Unlike most bipolar op amps, the unique phase reversal prevention/speed-up circuit in the input stage eliminates
phase reversal and allows the slew rate to be very much a function of the input signal amplitude.
Figure 32 shows how excess input signal is routed around the input collector-base junctions directly to the
current mirrors.
The LM6132/34 input stage converts the input voltage change to a current change. This current change drives
the current mirrors through the collectors of Q1–Q2, Q3–Q4 when the input levels are normal.
If the input signal exceeds the slew rate of the input stage and the differential input voltage rises above a diode
drop, the excess signal bypasses the normal input transistors, (Q1–Q4), and is routed in correct phase through
the two additional transistors, (Q5, Q6), directly into the current mirrors.
This rerouting of excess signal allows the slew-rate to increase by a factor of 10 to 1 or more. (See Figure 31).
As the overdrive increases, the op amp reacts better than a conventional op amp. Large fast pulses will raise the
slew- rate to around 25V to 30 V/μs.
Slew Rate vs. Differential VIN
VS = ±12V
Figure 31.
This effect is most noticeable at higher supply voltages and lower gains where incoming signals are likely to be
large.
This speed-up action adds stability to the system when driving large capacitive loads.
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DRIVING CAPACITIVE LOADS
Capacitive loads decrease the phase margin of all op amps. This is caused by the output resistance of the
amplifier and the load capacitance forming an R-C phase lag network. This can lead to overshoot, ringing and
oscillation. Slew rate limiting can also cause additional lag. Most op amps with a fixed maximum slew-rate will lag
further and further behind when driving capacitive loads even though the differential input voltage raises. With the
LM6132, the lag causes the slew rate to raise. The increased slew-rate keeps the output following the input
much better. This effectively reduces phase lag. After the output has caught up with the input, the differential
input voltage drops down and the amplifier settles rapidly.
Figure 32.
These features allow the LM6132 to drive capacitive loads as large as 500 pF at unity gain and not oscillate. The
scope photos (Figure 33 and Figure 34) above show the LM6132 driving a 500 pF load. In Figure 33 , the lower
trace is with no capacitive load and the upper trace is with a 500 pF load. Here we are operating on ±12V
supplies with a 20 VPP pulse. Excellent response is obtained with a Cf of 39 pF. In Figure 34, the supplies have
been reduced to ±2.5V, the pulse is 4 VPP and CF is 39 pF. The best value for the compensation capacitor should
be established after the board layout is finished because the value is dependent on board stray capacity, the
value of the feedback resistor, the closed loop gain and, to some extent, the supply voltage.
Another effect that is common to all op amps is the phase shift caused by the feedback resistor and the input
capacitance. This phase shift also reduces phase margin. This effect is taken care of at the same time as the
effect of the capacitive load when the capacitor is placed across the feedback resistor.
The circuit shown in Figure 35 was used for these scope photos.
Figure 33.
12
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Figure 34.
Figure 35.
Figure 36 shows a method for compensating for load capacitance (CO) effects by adding both an isolation
resistor RO at the output and a feedback capacitor CFdirectly between the output and the inverting input pin.
Feedback capacitor CF compensates for the pole introduced by RO and CO, minimizing ringing in the output
waveform while the feedback resistor RF compensates for dc inaccuracies introduced by RO. Depending on the
size of the load capacitance, the value of ROis typically chosen to be between 100Ω to 1 kΩ.
Figure 36.
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Typical Applications
3 OP AMP INSTRUMENTATION AMP WITH RAIL-TO-RAIL INPUT AND OUTPUT
Using the LM6134, a 3 op amp instrumentation amplifier with rail-to-rail inputs and rail to rail output can be made.
These features make these instrumentation amplifiers ideal for single supply systems.
Some manufacturers use a precision voltage divider array of 5 resistors to divide the common-mode voltage to
get an input range of rail-to-rail or greater. The problem with this method is that it also divides the signal, so to
even get unity gain, the amplifier must be run at high closed loop gains. This raises the noise and drift by the
internal gain factor and lowers the input impedance. Any mismatch in these precision resistors reduces the CMR
as well. Using the LM6134, all of these problems are eliminated.
In this example, amplifiers A and B act as buffers to the differential stage (Figure 37). These buffers assure that
the input impedance is over 100 MΩ and they eliminate the requirement for precision matched resistors in the
input stage. They also assure that the difference amp is driven from a voltage source. This is necessary to
maintain the CMR set by the matching of R1–R2 with R3–R4.
Figure 37.
FLAT PANEL DISPLAY BUFFERING
Three features of the LM6132/34 make it a superb choice for TFT LCD applications. First, its low current draw
(360 μA per amplifier @ 5V) makes it an ideal choice for battery powered applications such as in laptop
computers. Second, since the device operates down to 2.7V, it is a natural choice for next generation 3V TFT
panels. Last, but not least, the large capacitive drive capability of the LM6132 comes in very handy in driving
highly capacitive loads that are characteristic of LCD display drivers.
The large capacitive drive capability of the LM6132/34 allows it to be used as buffers for the gamma correction
reference voltage inputs of resistor-DAC type column (Source) drivers in TFT LCD panels. This amplifier is also
useful for buffering only the center reference voltage input of Capacitor-DAC type column (Source) drivers such
as the LMC750X series.
Since for VGA and SVGA displays, the buffered voltages must settle within approximately 4 μs, the well known
technique of using a small isolation resistor in series with the amplifier's output very effectively dampens the
ringing at the output.
With its wide supply voltage range of 2.7V to 24V), the LM6132/34 can be used for a diverse range of
applications. The system designer is thus able to choose a single device type that serves many sub-circuits in
the system, eliminating the need to specify multiple devices in the bill of materials. Along with its sister parts, the
LM6142 and LM6152 that have the same wide supply voltage capability, choice of the LM6132 in a design
eliminates the need to search for multiple sources for new designs.
14
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REVISION HISTORY
Changes from Revision C (February 2013) to Revision D
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 14
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PACKAGE OPTION ADDENDUM
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27-Mar-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM6132AIM
NRND
SOIC
D
8
95
TBD
Call TI
Call TI
-40 to 85
LM61
32AIM
LM6132AIM/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM61
32AIM
LM6132AIMX
NRND
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 85
LM61
32AIM
LM6132AIMX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM61
32AIM
LM6132BIM
NRND
SOIC
D
8
95
TBD
Call TI
Call TI
-40 to 85
LM61
32BIM
LM6132BIM/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM61
32BIM
LM6132BIMX
NRND
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 85
LM61
32BIM
LM6132BIMX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM61
32BIM
LM6132BIN
LIFEBUY
PDIP
P
8
40
TBD
Call TI
Call TI
-40 to 85
LM6132
BIN
LM6132BIN/NOPB
ACTIVE
PDIP
P
8
40
Green (RoHS
& no Sb/Br)
CU SN
Level-1-NA-UNLIM
-40 to 85
LM6132
BIN
LM6134AIM
NRND
SOIC
D
14
55
TBD
Call TI
Call TI
-40 to 85
LM6134AIM
LM6134AIM/NOPB
ACTIVE
SOIC
D
14
55
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM6134AIM
LM6134AIMX
NRND
SOIC
D
14
2500
TBD
Call TI
Call TI
-40 to 85
LM6134AIM
LM6134AIMX/NOPB
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM6134AIM
LM6134BIM
NRND
SOIC
D
14
55
TBD
Call TI
Call TI
-40 to 85
LM6134BIM
LM6134BIM/NOPB
ACTIVE
SOIC
D
14
55
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM6134BIM
LM6134BIMX/NOPB
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LM6134BIM
LM6134BIN
LIFEBUY
PDIP
NFF
14
25
TBD
Call TI
Call TI
-40 to 85
LM6134BIN
LM6134BIN/NOPB
ACTIVE
PDIP
NFF
14
25
Green (RoHS
& no Sb/Br)
SN
Level-1-NA-UNLIM
-40 to 85
LM6134BIN
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
27-Mar-2014
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM6132AIMX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM6132AIMX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM6132BIMX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM6132BIMX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM6134AIMX
SOIC
D
14
2500
330.0
16.4
6.5
9.35
2.3
8.0
16.0
Q1
LM6134AIMX/NOPB
SOIC
D
14
2500
330.0
16.4
6.5
9.35
2.3
8.0
16.0
Q1
LM6134BIMX/NOPB
SOIC
D
14
2500
330.0
16.4
6.5
9.35
2.3
8.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM6132AIMX
SOIC
D
8
2500
367.0
367.0
35.0
LM6132AIMX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM6132BIMX
SOIC
D
8
2500
367.0
367.0
35.0
LM6132BIMX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM6134AIMX
SOIC
D
14
2500
367.0
367.0
35.0
LM6134AIMX/NOPB
SOIC
D
14
2500
367.0
367.0
35.0
LM6134BIMX/NOPB
SOIC
D
14
2500
367.0
367.0
35.0
Pack Materials-Page 2
MECHANICAL DATA
NFF0014A
N0014A
N14A (Rev G)
www.ti.com
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