Yea Shin MUN5314DW Dual bias resistor transistor Datasheet

DATA SHEET
MUN5311DW Series
SEMICONDUCTOR
Dual Bias Resistor Transistors
H
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
6
5
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
MUN5311DW series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
4
1
2
3
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
SOT-363/SC-88
• We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1
and Q 2 , – minus sign for Q 1 (PNP) omitted)
Rating
Collector-Base Voltage
Symbol Value
V CBO
50
Collector-Emitter Voltage
Collector Current
Emitter-Base Voltage
V CEO
IC
V EBO
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation
PD
T A = 25°C
Derate above 25°C
50
100
6
Unit
Vdc
4
R1
Q2
Vdc
mAdc
6
5
R2
Q1
R2
R1
Vdc
1
Max
Unit
187 (Note 1.)
mW
256 (Note 2.)
1.5 (Note 1.)
mW/°C
3
2
MARKING DIAGRAM
6
4
5
XX
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R θJA
670 (Note 1.)
°C/W
490 (Note 2.)
1
2
3
xx = Device Marking
= (See Page 2)
Characteristic
(Both Junctions Heated)
Total Device Dissipation
Symbol
PD
Max
250 (Note 1.)
Unit
mW
385 (Note 2.)
Derate above 25°C
2.0 (Note 1.)
3.0 (Note 2.)
mW/°C
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
°C/W
R θJA
Junction-to-Ambient
Thermal Resistance –
R θJL
1. FR–4 @ Minimum Pad
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this data sheet.
°C/W
208 (Note 2.)
Junction-to-Lead
Junction and Storage
Temperature
INFORMATION
See specific marking information in
the device marking table on page 2 of
T A = 25°C
Thermal Resistance –
DEVICE MARKING
T J , T stg
–55 to +150
°C
2. FR–4 @ 1.0 x 1.0 inch Pad
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MUN5311DW Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1(K)
R2(K)
Shipping
MUN5311DW
SOT-363
11
10
10
3000/Tape&Reel
MUN5311DW
SOT-363
11
10
10
10000/Tape&Reel
MUN5312DW
SOT-363
12
22
22
3000/Tape&Reel
MUN5312DW
SOT-363
12
22
22
10000/Tape&Reel
MUN5313DW
SOT-363
13
47
47
3000/Tape&Reel
MUN5313DW
SOT-363
13
47
47
10000/Tape&Reel
MUN5314DW
SOT-363
14
10
47
3000/Tape&Reel
MUN5314DW
SOT-363
14
10
47
10000/Tape&Reel
MUN5315DW
SOT-363
15
10
Ğ
3000/Tape&Reel
MUN5315DW
SOT-363
15
10
Ğ
10000/Tape&Reel
MUN5316DW
SOT-363
16
4.7
Ğ
3000/Tape&Reel
MUN5316DW
SOT-363
16
4.7
Ğ
10000/Tape&Reel
MUN5330DW
SOT-363
30
1
1
3000/Tape&Reel
MUN5330DW
SOT-363
30
1
1
10000/Tape&Reel
MUN5331DW
SOT-363
31
2.2
2.2
3000/Tape&Reel
MUN5331DW
SOT-363
31
2.2
2.2
10000/Tape&Reel
MUN5332DW
SOT-363
32
4.7
4.7
3000/Tape&Reel
MUN5332DW
SOT-363
32
4.7
4.7
10000/Tape&Reel
MUN5333DW
SOT-363
33
4.7
47
3000/Tape&Reel
MUN5333DW
SOT-363
33
4.7
47
10000/Tape&Reel
MUN5334DW
SOT-363
34
22
47
3000/Tape&Reel
MUN5334DW
SOT-363
34
22
47
10000/Tape&Reel
MUN5335DW
SOT-363
35
2.2
47
3000/Tape&Reel
MUN5335DW
SOT-363
35
2.2
47
10000/Tape&Reel
Device
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MUN5311DW Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
kW
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.0
0.21
−
1.0
0.1
0.47
0.047
1.2
0.25
−
1.2
0.185
0.56
0.056
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5311DW
MUN5312DW
MUN5313DW
MUN5314DW
MUN5315DW
MUN5316DW
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5330DW/MUN5331DW
(IC = 10 mA, IB = 1 mA) MUN5315DW/MUN5316DW
MUN5332DW/MUN5333DW/MUN5334DW
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
VOL
MUN5311DW
MUN5312DW
MUN5314DW
MUN5315DW
MUN5316DW
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
MUN5313DW
Vdc
Vdc
MUN5330DW
MUN5315DW
MUN5316DW
MUN5333DW
MUN5311DW
MUN5312DW
MUN5313DW
MUN5314DW
MUN5315DW
MUN5316DW
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
Resistor Ratio MUN5311DW/MUN5312DW/MUN5313DW
MUN5314DW
MUN5315DW/MUN5316DW
MUN5330DW/MUN5331DW/MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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DEVICE CHARACTERISTICS
MUN5311DW Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
Characteristic
OFF CHARACTERISTICS
MUN5311DW
MUN5312DW
MUN5313DW
MUN5314DW
MUN5315DW
MUN5316DW
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ALL MUN5311DW SERIES DEVICES
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 490°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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DEVICE CHARACTERISTICS
MUN5311DW Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW NPN TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
−25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
3
100
1
0.1
0.01
VO = 5 V
0.001
50
TA=−25°C
10
Figure 4. Output Capacitance
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
Figure 5. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW PNP TRANSISTOR
TA=−25°C
0.1
25°C
75°C
0.01
0
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
100
10
50
VCE = 10 V
−25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
100
f = 1 MHz
lE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
3
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
V in , INPUT VOLTAGE (VOLTS)
25°C
75°C
VO = 5 V
0
Figure 9. Output Capacitance
100
100
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
Figure 10. Output Current versus Input
Voltage
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW NPN TRANSISTOR
IC/IB = 10
25°C
TA=−25°C
0.1
75°C
0.01
0.001
0
20
−25°C
100
1
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4
100
f = 1 MHz
IE = 0 V
TA = 25°C
3
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
TA=75°C
25°C
10
50
40
VCE = 10 V
2
1
75°C
25°C
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
Figure 14. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
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DEVICE CHARACTERISTICS
MUN5311DW Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW PNP TRANSISTOR
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
20
IC, COLLECTOR CURRENT (mA)
40
TA=75°C
1
10
Figure 18. DC Current Gain
100
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 19. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
3
25°C
−25°C
100
10
50
VCE = 10 V
TA=−25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
Figure 20. Output Current versus Input Voltage
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5311DW Series
10
1000
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW NPN TRANSISTOR
TA=75°C
25°C
−25°C
100
10
50
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
1
Figure 22. VCE(sat) versus IC
1
100
0.6
0.4
0.2
0
0
25°C
75°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
Figure 23. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
10
IC, COLLECTOR CURRENT (mA)
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0.001
Figure 24. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
Figure 25. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5311DW Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
1000
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
0
100
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
−25°C
10
1
0.1
0.01
0.001
50
25°C
TA=75°C
Figure 29. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
Figure 30. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
10
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 31. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5311DW Series
300
1
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW NPN TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
−25°C
150
100
50
0
80
1
2
4
6
Figure 32. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
Cob , CAPACITANCE (pF)
90 100
Figure 33. DC Current Gain
4
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
−25°C
10
VO = 5 V
1
50
Figure 34. Output Capacitance
25°C
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
Figure 35. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 36. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5311DW Series
1
180
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW PNP TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10 V
160
25°C
140
−25°C
120
100
80
60
40
20
0
80
1
2
4
6
Figure 37. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
Cob , CAPACITANCE (pF)
80 90 100
Figure 38. DC Current Gain
4.5
3
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
50
Figure 39. Output Capacitance
25°C
−25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
Figure 40. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=−25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
http://www.yeashin.com
10
12
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
TA = −25°C
100
10
1
50
25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
100
Figure 43. DC Current Gain
12
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW NPN TRANSISTOR
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 44. Output Capacitance
0
1
2
6
5
4
8
3
7
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 45. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 46. Input Voltage versus Output Current
http://www.yeashin.com
10
13
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
100
10
IC, COLLECTOR CURRENT (mA)
1
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
100
4
IC, COLLECTOR CURRENT (mA)
4.5
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW PNP TRANSISTOR
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 49. Output Capacitance
0
1
2
8
7
6
5
4
3
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 50. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 51. Input Voltage versus Output Current
http://www.yeashin.com
10
14
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 52. VCE(sat) versus IC
100
Figure 53. DC Current Gain
12
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW NPN TRANSISTOR
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 54. Output Capacitance
0
1
2
7
3
8
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 55. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 56. Input Voltage versus Output Current
http://www.yeashin.com
10
15
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
10
1
50
25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 57. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
100
Figure 58. DC Current Gain
4.5
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW PNP TRANSISTOR
3
2.5
2
1.5
1
0.5
75°C
10
25°C
TA = −25°C
1
0.1
0.01
VO = 5 V
0.001
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 59. Output Capacitance
0
1
2
6
5
8
4
7
3
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 60. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 61. Input Voltage versus Output Current
http://www.yeashin.com
10
16
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
100
75°C
10
25°C
TA = −25°C
0.001
5
0
1
30
25
20
15
10
IC, COLLECTOR CURRENT (mA)
1
10
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
10
100
75°C
10
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
100
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
TA = −25°C
1
25°C
VO = 0.2 V
0.1
0.001
0
1
2
3
7
8
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 64. Output Current versus Input Voltage
http://www.yeashin.com
17
75°C
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 65. Input Voltage versus Output Current
REV.02 20130927
25
DEVICE CHARACTERISTICS
MUN5311DW Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
75°C
10
25°C
TA = −25°C
VCE = 10 V
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 66. VCE(sat) versus IC
Figure 67. DC Current Gain
4.5
IC, COLLECTOR CURRENT (mA)
100
4
Cob, CAPACITANCE (pF)
100
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 68. Output Capacitance
0
1
2
8
7
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 69. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 70. Input Voltage versus Output Current
http://www.yeashin.com
10
18
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
TA = −25°C
1
30
25°C
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 71. VCE(sat) versus IC
Figure 72. DC Current Gain
12
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
10 75°C
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 73. Output Capacitance
0
1
2
8
7
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 74. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
20
5
10
15
IC, COLLECTOR CURRENT (mA)
25
Figure 75. Input Voltage versus Output Current
http://www.yeashin.com
10
19
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
TA = −25°C
VCE = 10 V
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
1
50
100
10
IC, COLLECTOR CURRENT (mA)
1
Figure 76. VCE(sat) versus IC
Figure 77. DC Current Gain
4.5
IC, COLLECTOR CURRENT (mA)
100
4
Cob, CAPACITANCE (pF)
25°C
75°C
10
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 78. Output Capacitance
0
1
2
8
7
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 79. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 80. Input Voltage versus Output Current
http://www.yeashin.com
10
20
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
25°C
10
TA = −25°C
1
50
Figure 81. VCE(sat) versus IC
Figure 82. DC Current Gain
12
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
10
IC, COLLECTOR CURRENT (mA)
1
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 83. Output Capacitance
0
1
2
8
7
6
5
4
3
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 84. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
25°C
1
75°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 85. Input Voltage versus Output Current
http://www.yeashin.com
10
21
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
TA = −25°C
10
1
50
75°C
100
100
10
IC, COLLECTOR CURRENT (mA)
1
Figure 86. VCE(sat) versus IC
Figure 87. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
6
Cob, CAPACITANCE (pF)
25°C
f = 1 MHz
IE = 0 V
TA = 25°C
5
4
3
2
1
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 88. Output Capacitance
0
1
2
8
7
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 89. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 90. Input Voltage versus Output Current
http://www.yeashin.com
10
22
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
100
10
IC, COLLECTOR CURRENT (mA)
1
Figure 91. VCE(sat) versus IC
Figure 92. DC Current Gain
8
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
7
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
6
5
4
3
2
1
0
75°C
10
25°C
1
0.1
TA = −25°C
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30
35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 93. Output Capacitance
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 94. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 95. Input Voltage versus Output Current
http://www.yeashin.com
10
23
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW PNP TRANSISTOR
75°C
−25°C
25°C
0.01
0.001
0
5
20
10
15
25
IC, COLLECTOR CURRENT (mA)
75°C
25°C
10
1
30
TA = −25°C
100
Figure 96. VCE(sat) versus IC
Figure 97. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
Cob, CAPACITANCE (pF)
100
10
IC, COLLECTOR CURRENT (mA)
1
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 98. Output Capacitance
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 99. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
20
5
10
15
IC, COLLECTOR CURRENT (mA)
25
Figure 100. Input Voltage versus Output
Current
http://www.yeashin.com
10
24
REV.02 20130927
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
100
100
10
IC, COLLECTOR CURRENT (mA)
1
Figure 101. VCE(sat) versus IC
Figure 102. DC Current Gain
3.5
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
3
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
0.1
TA = −25°C
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 103. Output Capacitance
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 104. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)
100
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 105. Input Voltage versus Output
Current
http://www.yeashin.com
25
REV.02 20130927
10
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW PNP TRANSISTOR
75°C
−25°C
25°C
0.01
0.001
0
5
25
15
10
20
IC, COLLECTOR CURRENT (mA)
30
Figure 106. VCE(sat) versus IC
http://www.yeashin.com
75°C
100
TA = −25°C
25°C
10
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 107. DC Current Gain
26
REV.02 20130927
100
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 108. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
Figure 109. DC Current Gain
12
f = 1 MHz
IE = 0 V
TA = 25°C
10
25°C
10
1
50
TA = −25°C
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 110. Output Capacitance
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 111. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 112. Input Voltage versus Output
Current
http://www.yeashin.com
27
REV.02 20130927
10
DEVICE CHARACTERISTICS
MUN5311DW Series
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
30
40
20
10
IC, COLLECTOR CURRENT (mA)
0
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 113. VCE(sat) versus IC
100
Figure 114. DC Current Gain
4.5
IC, COLLECTOR CURRENT (mA)
100
4
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
25°C
10
75°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
35 40 45
10 15 20 25 30
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
50
Figure 115. Output Capacitance
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
Figure 116. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
75°C
1
25°C
TA = −25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 117. Input Voltage versus Output
Current
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REV.02 20130927
10
PACKAGE OUTLINE & DIMENSIONS
MUN5311DW Series
SC-88/SOT-363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
G
DIM
6
5
4
- B-
S
1
2
3
0.2 (0.008) M B M
D6PL
N
J
A
B
C
D
G
H
J
K
N
S
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
C
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
K
H
0.4 mm (min)
0.65 mm 0.65 mm
0.5 mm (min)
1.9 mm
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REV.02 20130927