JMNIC BFG505 Npn 9 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D071
BFG505; BFG505/X
NPN 9 GHz wideband transistors
Product specification
Supersedes data of September 1995
1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
FEATURES
PINNING
• High power gain
DESCRIPTION
PIN
• Low noise figure
BFG505
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
BFG505/X
1
collector
collector
2
base
emitter
3
emitter
base
4
emitter
emitter
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
handbook, 2 columns
4
3
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
1
MARKING
2
Top view
TYPE NUMBER
MSB014
CODE
BFG505
N33
BFG505/X
N39
Fig.1 Simplified outline SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
TYP.
MAX.
UNIT
−
−
20
V
−
−
15
V
VCBO
collector-base voltage
VCES
collector-emitter voltage RBE = 0
IC
collector current (DC)
−
−
18
mA
Ptot
total power dissipation
Ts ≤ 130 °C
−
−
150
mW
hFE
DC current gain
VCE = 6 V; IC = 5 mA
60
120
250
Cre
feedback capacitance
VCB = 6 V; IC = ic = 0; f = 1 MHz
−
0.2
−
fT
transition frequency
VCE = 6 V; IC = 5 mA; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain
VCE = 6 V; IC = 5 mA;
Tamb = 25 °C; f = 900 MHz
−
20
−
dB
VCE = 6 V; IC = 5 mA;
Tamb = 25 °C; f = 2 GHz
−
13
−
dB
pF
S212
insertion power gain
VCE = 6 V; Ic = 5 mA;
Tamb = 25 °C; f = 900 MHz
16
17
−
dB
F
noise figure
Γs = Γopt; VCE = 6 V; Ic = 1.25 mA;
Tamb = 25 °C; f = 900 MHz
−
1.2
1.7
dB
Γs = Γopt; VCE = 6 V; Ic = 5 mA;
Tamb = 25 °C; f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; VCE = 6 V; Ic = 1.25 mA;
Tamb = 25 °C; f = 2 GHz
−
1.9
−
dB
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
18
mA
Ptot
total power dissipation
Ts ≤ 130 °C; see Fig.2; note 1
−
150
mW
Tstg
storage temperature range
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MRA638-1
200
handbook, halfpage
Ptot
(mW)
150
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
1998 Oct 02
3
VALUE
UNIT
290
K/W
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
TYP.
−
MAX.
50
UNIT
ICBO
collector cut-off current
VCB = 6 V; IE = 0
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V; see Fig.3
60
120
250
Ce
emitter capacitance
IC = ic = 0 VEB = 0.5 V; f = 1 MHz
−
0.4
−
pF
Cc
collector capacitance
VCB = 6 V; IE = ie = 0; f = 1 MHz
−
0.3
−
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4
−
0.2
−
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
see Fig.5
−
9
−
GHz
GUM
maximum unilateral
power gain; note 1
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
20
−
dB
Ic = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
13
−
dB
S212
insertion power gain
Ic = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
16
17
−
dB
F
noise figure
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.2
1.7
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
IC = 5 mA; VCE = 6 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
−
4
−
dBm
ITO
third order intercept point
note 2
−
10
−
dBm
Notes
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
2. VCE = 6 V; IC = 5 mA; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
MRA639
250
MRA640
0.4
handbook, halfpage
handbook, halfpage
hFE
Cre
(pF)
200
0.3
150
0.2
100
0.1
50
0
10−3
10−2
10−1
1
10
0
102
IC (mA)
0
4
6
8
10
VCB (V)
IC = 0; f = 1 MHz.
VCE = 6 V.
Fig.3
2
DC current gain as a function of collector
current.
Fig.4
MRA641
12
Feedback capacitance as a function of
collector-base voltage.
MRA642
25
handbook, halfpage
handbook, halfpage
fT
gain
(dB)
VCE = 6 V
(GHz)
GUM
20
VCE = 3 V
8
MSG
15
10
4
5
0
10−1
1
10
IC (mA)
0
102
0
1998 Oct 02
8
12
IC (mA)
VCE = 6 V; f = 900 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Tamb = 25 °C; f = 1 GHz.
Fig.5
4
Transition frequency as a function of
collector current.
Fig.6 Gain as a function of collector current.
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
MRA643
25
MRA644
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
40
MSG
Gmax
15
GUM
30
MSG
GUM
10
20
5
10
0
0
4
8
0
10
12
IC (mA)
VCE = 6 V; f = 2 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
103
MRA645
MRA650
5
50
handbook, halfpage
Fmin
GUM
f = 900 MHz
(dB)
4
40
1000 MHz
MSG
30
3
20
2
Gmax
10
102
103
f (MHz)
1
0
10−1
104
VCE = 6 V; IC = 5 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Gass
20
Gass
(dB)
15
2000 MHz
10
5
2000 MHz
Fmin
1000 MHz
900 MHz
500 MHz
0
1
IC (mA)
−5
10
VCE = 6 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.9 Gain as a function of frequency.
1998 Oct 02
104
Fig.8 Gain as a function of frequency.
handbook, halfpage
0
10
f (MHz)
VCE = 6 V; IC = 1.25 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.7 Gain as a function of collector current.
gain
(dB)
102
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
MRA651
5
andbook, halfpageIC = 1.25 mA
5 mA
Fmin
(dB)
4
20
Gass
(dB)
15
Gass
3
10
2
5
5 mA
1
BFG505; BFG505/X
Fmin
0
1.25 mA
0
102
103
−5
104
f (MHz)
VCE = 6 V.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
pot. unst.
region
handbook, full pagewidth
90°
1.0
1
135°
2
0.5
0.8
45°
0.6
stability
0.2
circle
180°
Fmin = 1. 2 dB
0.2
0
0.5
1
0.4
5
ΓOPT
F = 1.5 dB
2
5
0.2
0°
0
F = 2 dB
F = 3 dB
0.2
−135°
0.5
5
2
−45°
1
MRA652
Zo = 50 Ω.
VCE = 6 V; Ic = 1.25 mA; f = 900 MHz.
−90°
Fig.12 Noise circle figure.
1998 Oct 02
7
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, full pagewidth
90°
pot. unst.
region
1.0
1
135°
0.8
45°
2
0.5
0.6
ΓOPT
0.2
stability
circle
180°
0.4
5
Fmin = 1. 9 dB
0.2
0.2
0
0.5
F = 2.5 dB
1
2
5
0°
0
F = 3 dB
F = 4 dB
5
0.2
−135°
0.5
2
−45°
1
MRA653
−90°
Zo = 50 Ω.
VCE = 6 V; Ic = 1.25 mA; f = 2000 MHz.
Fig.13 Noise circle figure.
1998 Oct 02
8
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
3 GHz
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
5
0.2
0.5
−135°
2
−45°
1
MRA646
−90°
VCE = 6 V; IC = 5 mA.
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
15
12
9
6
0°
3
−135°
−45°
−90°
MRA647
VCE = 6 V; IC = 5 mA.
Fig.15 Common emitter forward transmission coefficient (S21).
1998 Oct 02
9
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.25
0.20
0.15
0.10
0°
0.05
−135°
−45°
−90°
MRA648
VCE = 6 V; IC = 5 mA.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
40 MHz
0
5
0.2
3 GHz
−135°
0.5
2
−45°
1
MRA649
VCE = 6 V; IC = 5 mA.
Zo = 50 Ω.
−90°
Fig.17 Common emitter output reflection coefficient (S22).
1998 Oct 02
10
1.0
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1998 Oct 02
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
NOTES
1998 Oct 02
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
NOTES
1998 Oct 02
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
NOTES
1998 Oct 02
15
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© Philips Electronics N.V. 1998
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Printed in The Netherlands
125104/00/03/pp16
Date of release: 1998 Oct 02
Document order number:
9397 750 04348