GTM GMBTA94 Pnp epitaxial planar transistor Datasheet

ISSUED DATE :2002/03/25
REVISED DATE :2006/10/13B
G M B TA 9 4
P N P EP I TAXI AL P L AN AR T R AN S I ST O R
Description
The GMBTA94 is designed for application requires high voltage.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Electrical Characteristics (Ta = 25
Symbol
Ratings
+150
-55~+150
-400
-400
-6
-300
350
Unit
V
V
V
mA
mW
, unless otherwise noted)
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-400
-
-
V
IC=-100uA, IE=0
BVCEO
-400
-
-
V
IC=-1mA, IB=0
BVEBO
-6
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-100
nA
VCB=-400V, IE=0
IEBO
-
-
-100
nA
VEB=-4V, IC=0
ICES
-
-
-500
nA
VCE=-400V
VCE(sat)1
-
-
-350
mV
IC=-1mA, IB=-0.1mA
VCE(sat)2
-
-
-500
mV
IC=-20mA, IB=-2mA
VCE(sat)3
-
-
-750
mV
IC=-50mA, IB=-5mA
VBE(sat)
-
-
-750
mV
IC=-10mA, IB=-1mA
hFE1
40
-
-
VCE=-10V, IC=-1mA
hFE2
50
-
300
VCE=-10V, IC=-10mA
hFE3
45
-
-
VCE=-10V, IC=-50mA
hFE4
20
-
-
VCE=-10V, IC=-100mA
GMBTA94
Page: 1/2
ISSUED DATE :2002/03/25
REVISED DATE :2006/10/13B
Characteristics Curve
Important Notice:
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GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
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TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GMBTA94
Page: 2/2
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