Fairchild FDS4559 60v complementary powertrench mosfet Datasheet

FDS4559
60V Complementary PowerTrenchMOSFET
General Description
Features
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
•
Q1: N-Channel
RDS(on) = 55 mΩ @ VGS = 10V
4.5 A, 60 V
RDS(on) = 75 mΩ @ VGS = 4.5V
•
Applications
Q2: P-Channel
–3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V
• DC/DC converter
RDS(on) = 135 mΩ @ VGS = –4.5V
• Power management
• LCD backlight inverter
DD2
DD2
D1
D
DD1
G2
S2 G
G1
S1 S
S
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
2
8
1
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
7
S
Absolute Maximum Ratings
Q1
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
Q2
Units
60
–60
±20
4.5
20
±20
–3.5
–20
V
V
A
2
1.6
1.2
1
-55 to +175
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
3
Q1
Pin 1 SO-8
PD
4
6
SO-8
Symbol
Q2
5
Operating and Storage Junction Temperature Range
W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4559
FDS4559
13”
12mm
2500 units
2000 Fairchild Semiconductor Corporation
FDS4559 Rev C1(W)
FDS4559
April 2002
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W DSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
VDD = 30 V,
ID = 4.5 A
Q1
90
mJ
Q1
4.5
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
On Characteristics
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 48 V, VGS = 0 V
VDS = –48 V, VGS = 0 V
VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
60
–60
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 4.5 A
VGS = 10 V, ID = 4.5 A, TJ = 125°C
VGS = 4.5 V, ID = 4 A
VGS = –10 V, ID = –3.5 A
VGS = –10 V, ID = –3.5 A, TJ = 125°C
VGS = –4.5 V, ID = –3.1 A
VGS = 10 V, VDS = 5 V
VGS = –10 V, VDS = –5 V
VDS = 10 V, ID = 4.5 A
VDS = –5 V, ID = –3 5 A
Q1
Q2
Q1
Q2
Q1
1
–1
Q1
Q2
Q1
Q2
Q1
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Q2
VDS = –30 V, VGS = 0 V,
f = 1.0 MHz
Q1
VDD = 30 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
V
58
–49
mV/°C
1
–1
+100
+100
µA
3
–3
V
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
Q2
2.2
–1.6
–5.5
4
42
72
55
82
130
105
mV/°C
55
94
75
105
190
135
20
–20
mΩ
A
14
9
S
Q1
Q2
Q1
Q2
Q1
Q2
650
759
80
90
35
39
pF
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11
7
8
10
19
19
6
12
12.5
15
2.4
2.5
2.6
3.0
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
pF
pF
(Note 2)
Q2
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
Q1
VDS = 30 V, ID = 4.5 A, VGS = 10 V
Q2
VDS = –30 V, ID = –3.5 A, VGS = –10V
20
14
18
20
35
34
15
22
18
21
ns
ns
ns
ns
nC
nC
nC
FDS4559 Rev C1(W)
FDS4559
Electrical Characteristics
Symbol
Parameter
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2)
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
Q1
Q2
Q1
Q2
0.8
–0.8
1.3
–1.3
1.2
–1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4559 Rev C1(W)
FDS4559
Electrical Characteristics
FDS4559
Typical Characteristics: Q2
1.8
-ID, DRAIN CURRENT (A)
VGS = -10V
-6.0V
12
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
15
-4.5V
-4.0V
-5.0V
-3.5V
9
6
-3.0V
3
-2.5V
VGS = -3.5V
1.6
-4.0V
1.4
-4.5V
-5.0V
1.2
-6.0V
0
-10V
1
2
3
4
0
5
2
4
6
8
10
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
0.4
ID = -3.5A
VGS = -10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-8.0V
1
0.8
0
1.6
1.4
1.2
1
0.8
0.6
0.4
ID = -1.5A
0.3
TA = 125oC
0.2
0.1
TA = 25oC
0
-50
-25
0
25
50
75
100
125
150
175
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
TA = -55oC
VDS = -5V
-IS, REVERSE DRAIN CURRENT (A)
15
-ID, DRAIN CURRENT (A)
-7.0V
25oC
12
125oC
9
6
3
0
VGS = 0V
10
TA = 125oC
25oC
1
-55oC
0.1
0.01
0.001
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4559 Rev C1(W)
FDS4559
Typical Characteristics: Q2
1200
VDS = 10V
ID = -3.0A
20V
f = 1 MHz
V GS = 0 V
1000
8
30V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
800
C ISS
600
400
2
200
C OSS
C RSS
0
0
0
4
8
12
16
0
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
40
50
60
Figure 8. Capacitance Characteristics.
40
P(pk), PEAK TRANSIENT POWER (W)
100
100µs
ID, DRAIN CURRENT (A)
20
-V DS , DRAIN TO SOURCE VOLTAGE (V)
RDS(ON) LIMIT
10
10ms
100ms
1
1s
10s
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
0.1
DC
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4559 Rev C1(W)
FDS4559
Typical Characteristics: Q1
1.8
VGS = 10V
6.0V
16
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN-SOURCE CURRENT (A)
20
4.5V
5.0V
4.0V
12
8
3.5V
4
1.6
VGS = 4.0V
1.4
4.5V
5.0V
1.2
6.0V
8.0V
0.8
0
0
1
2
3
0
4
4
8
12
16
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
2.2
ID = 2.3A
ID = 4.5A
VGS = 10V
2
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
1
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
0.12
0.1
TA = 125oC
0.08
0.06
0.04
TA = 25oC
0.02
0
175
2
4
6
8
10
o
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
ID, DRAIN CURRENT (A)
25oC
IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
VDS = 5V
o
16
125 C
12
8
4
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4559 Rev C1(W)
FDS4559
Typical Characteristics: Q1
ID = 4.5A
900
VDS = 10V
8
30V
f = 1MHz
VGS = 0 V
800
20V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
2
700
CISS
600
500
400
300
200
COSS
100
0
CRSS
0
0
2
4
6
8
10
12
14
0
10
Qg, GATE CHARGE (nC)
20
30
40
50
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
40
100
SINGLE PULSE
RθJA = 135oC/W
RDS(ON) LIMIT
100µs
10
TA = 25oC
30
1m
POWER (W)
ID, DRAIN CURRENT (A)
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
1
1s
DC
VGS= 10V
SINGLE PULSE
RθJA= 135oC/W
0.1
20
10
TA= 25oC
0.01
0.1
1
10
0
0.01
100
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 135°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4559 Rev C1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST â
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC â
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench â
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER â UHC™
SMART START™
UltraFET â
SPM™
VCX™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5