CYStech Electronics Corp. Spec. No. : C032J3 Issued Date : 2017.10.06 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTE012P08J3 BVDSS ID @VGS=-10V, TC=25°C ID @VGS=-10V, TA=25°C RDS(ON)@VGS=-10V, ID=-50A -80V -52A -9.3A 12.8mΩ(typ) Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package Symbol Outline MTE012P08J3 TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTE012P08J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE012P08J3 CYStek Product Specification Spec. No. : C032J3 Issued Date : 2017.10.06 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C Continuous Drain Current @VGS=-10V, TA=100°C Pulsed Drain Current Single Pulse Avalanche Current @ L=0.1mH Single Pulse Avalanche Energy @ L=1mH, IAS=-40A, VDD=-25V TC=25℃ TC=100℃ Power Dissipation TA=25℃ TA=100℃ Operating Junction and Storage Temperature VDS VGS ID IDM IAS EAS PD Tj, Tstg Limits Unit -80 ±20 -52 -32.9 -9.3 -5.9 -208 *1 -90 800 *2 78 *4 31.2 *4 2.5 1.0 -55~+150 V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 1.6 50 *3 Unit °C/W Note : *1. Pulse width limited by safe operating area. *2 . 100% tested by conditions of VDD=-25V, L=0.1mH, VGS=-10V, IAS=-30A. *3 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. *4 . The power dissipation PD is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determined the current rating, when this rating falls below the package limit. Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd MTE012P08J3 Min. Typ. Max. -80 -2 - 32.5 12.8 -4 ±100 -1 -25 18 - 94.1 20.4 30.9 - Unit Test Conditions mΩ VGS=0V, ID=-250μA VDS = VGS, ID=-250μA VDS =-10V, ID=-20A VGS=±20V, VDS=0V VDS =-64V, VGS =0V VDS =-64V, VGS =0V, Tj=70°C VGS =-10V, ID=-50A nC ID=-50A, VDS=-40V, VGS=-10V V S nA μA CYStek Product Specification CYStech Electronics Corp. *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode * IS *ISM *VSD *trr *Qrr - 35.2 30 78.2 20.6 5117 400 130 - -0.86 28 34.3 -52 -208 -1.2 - Spec. No. : C032J3 Issued Date : 2017.10.06 Revised Date : Page No. : 3/9 ns VDS=-40V, VGS=-10V, RG=1Ω, ID=-50A pF VGS=0V, VDS=-40V, f=1MHz A V ns nC IS=-30A, VGS=0V IF=-30A, VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTE012P08J3 CYStek Product Specification Spec. No. : C032J3 Issued Date : 2017.10.06 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V, 9V, 8V,7V, 6V 90 -I D, Drain Current(A) -BVDSS, Normalized Drain-Source Breakdown Voltage 100 80 70 60 5V 50 40 30 4.5V 20 10 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 -VGS=4V 0.4 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 70 -VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) 80 VGS=-4.5V -6V -10V 60 50 40 30 20 VGS=0V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 10 0.2 0 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 20 30 40 50 60 70 80 -IDR , Reverse Drain Current(A) 90 100 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 50 2.4 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 10 45 40 35 ID=-50A 30 25 20 ID=-30A 15 10 2 VGS=-10V, ID=-50A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 12.8mΩ typ 5 0 0 0 MTE012P08J3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C032J3 Issued Date : 2017.10.06 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss Crss f=1MHz 1.4 1.2 ID=-1mA 1 0.8 ID=-250μA 0.6 0.4 100 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) 35 -75 -50 -25 40 Gate Charge Characteristics Maximum Safe Operating Area 10 RDS(ON) Limited 100 -VGS, Gate-Source Voltage(V) 1000 -I D, Drain Current (A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 100μs 1ms 10ms 10 100ms 1s 1 TC=25°C, Tj=150°C, VGS=-10V, RθJC=1.6°C/W, single pulse DC VDS=-40V 8 6 VDS=-64V 4 2 ID=-50A 0 0.1 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 0 1000 10 Maximum Drain Current vs Case Temperature 20 30 40 50 60 70 80 Qg, Total Gate Charge(nC) 90 100 Typical Transfer Characteristics 100 60 -I D, Drain Current(A) -I D, Maximum Drain Current(A) VDS=-10V 50 40 30 20 VGS=-10V, Tj(max)=150°C, RθJC=1.6°C/W, single pulse 10 80 60 40 20 0 0 25 MTE012P08J3 50 75 100 125 TC , Case Temperature(°C) 150 175 0 1 2 3 4 5 6 7 8 -VGS, Gate-Source Voltage(V) 9 10 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C032J3 Issued Date : 2017.10.06 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Maximum Power Dissipation GFS , Forward Transfer Admittance(S) 100 5000 4500 Peak Transient Power (W) VDS=-10V 10 1 VDS=-15V 0.1 Pulsed Ta=25°C 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 TJ(MAX) =150°C TC=25°C RθJC=1.6°C/W 4000 3500 3000 2500 2000 1500 1000 500 100 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.6 ° C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE012P08J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C032J3 Issued Date : 2017.10.06 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE012P08J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C032J3 Issued Date : 2017.10.06 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE012P08J3 CYStek Product Specification Spec. No. : C032J3 Issued Date : 2017.10.06 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name E012 P08 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE012P08J3 CYStek Product Specification