MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon www.onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • COLLECTOR 3 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage VCBO −350 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Base Current IB −250 mA Collector Current − Continuous IC −500 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM PD RqJA PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2Z M G G 1 2Z = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT6520LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBT6520LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel NSVMMBT6520LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 7 1 Publication Order Number: MMBT6520LT1/D MMBT6520L, NSVMMBT6520L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = −1.0 mA) V(BR)CEO −350 − Vdc Collector−Base Breakdown Voltage (IC = −100 mA) V(BR)CBO −350 − Vdc Emitter−Base Breakdown Voltage (IE = −10 mA) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCB = −250 V) ICBO − −50 nA Emitter Cutoff Current (VEB = −4.0 V) IEBO − −50 nA 20 30 30 20 15 − − 200 200 − − − − − −0.30 −0.35 −0.50 −1.0 − − − −0.75 −0.85 −0.90 Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = −1.0 mA, VCE = −10 V) (IC = −10 mA, VCE = −10 V) (IC = −30 mA, VCE = −10 V) (IC = −50 mA, VCE = −10 V) (IC = −100 mA, VCE = −10 V) hFE Collector−Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) (IC = −20 mA, IB = −2.0 mA) (IC = −30 mA, IB = −3.0 mA) (IC = −50 mA, IB = −5.0 mA) VCE(sat) Base−Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) (IC = −20 mA, IB = −2.0 mA) (IC = −30 mA, IB = −3.0 mA) VBE(sat) Base−Emitter On Voltage (IC = −100 mA, VCE = −10 V) VBE(on) − −2.0 Vdc fT 40 200 MHz Collector−Base Capacitance (VCB= −20 V, f = 1.0 MHz) Ccb − 6.0 pF Emitter−Base Capacitance (VEB= −0.5 V, f = 1.0 MHz) Ceb − 100 pF − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mA, VCE = −20 V, f = 20 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 hFE, DC CURRENT GAIN 200 VCE = 10 V TJ = 125°C 100 25°C 70 -55°C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) MMBT6520L, NSVMMBT6520L 100 70 50 20 10 1.0 1.4 TJ = 25°C V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 100 2.5 IC + 10 IB 2.0 1.5 25°C to 125°C 1.0 0.5 0 -1.5 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 -2.0 -2.5 1.0 70 100 RqVC for VCE(sat) -55°C to 25°C 100 70 50 2.0 1.0k 700 500 TJ = 25°C Ceb 30 -55°C to 125°C RqVB for VBE 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 4. Temperature Coefficients Figure 3. “On” Voltages td @ VBE(off) = 2.0 V 300 VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C 200 20 t, TIME (ns) C, CAPACITANCE (pF) 50 70 -1.0 0.2 10 7.0 5.0 Ccb tr 100 70 50 3.0 30 2.0 20 1.0 0.2 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) -0.5 0.4 0 1.0 2.0 Figure 2. Current−Gain — Bandwidth Product RθV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 1. DC Current Gain 1.2 TJ = 25°C VCE = 20 V f = 20 MHz 30 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 10 1.0 50 100 200 Figure 5. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−On Time www.onsemi.com 3 50 70 100 MMBT6520L, NSVMMBT6520L IC, COLLECTOR CURRENT (A) 1 10k 7.0k 5.0k ts 3.0k t, TIME (ns) 2.0k 1.0k 700 500 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C tf 300 200 100 1.0 10 ms 0.1 1.0 s 0.01 0.001 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 1 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.3 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 7. Turn−Off Time 1.0 0.7 0.5 100 Figure 8. Safe Operating Area D = 0.5 0.2 0.2 0.1 P(pk) 0.1 0.07 0.05 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 0.03 0.02 0.01 0.1 SINGLE PULSE 0.05 0.2 0.5 1.0 t1 t2 DUTY CYCLE, D = t1/t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k Figure 9. Thermal Response +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 W SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH ≈ 100 ms tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) Figure 10. Switching Time Test Circuit www.onsemi.com 4 5.0k 10k MMBT6520L, NSVMMBT6520L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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