JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS CJND2007 Dual N-Channel MOSFET DFNWB5×2-6L-A V(BR)DSS ID RDS(on)MAX 20mΩ@10 V 22mΩ @4.5V 24 mΩ@3.8V 20V 7A 26mΩ @2.5V 35mΩ@1.8V DESCRIPTION The CJND2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A IDM * 30 A 175 ℃/W 70 ℃/W Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient(note1) RθJA Thermal Resistance from Junction to Ambient(note2) Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ *Repetitive rating：Pluse width limited by junction temperature. Note：1.When mounted on a minimum pad. 2 2.When mounted on 1 in of 2oz copper board. www.cj-elec.com 1 C,May,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA 1 V VGS =10V, ID =7A 20 mΩ VGS =4.5V, ID =6.6A 22 mΩ VGS =3.8V, ID =6A 24 mΩ VGS =2.5V, ID =5.5A 26 mΩ VGS =1.8V, ID =5A 35 mΩ Gate threshold voltage (note 1) Drain-source on-resistance (note 1) VGS(th) RDS(on) VDS =VGS, ID =250µA Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 20 V 0.4 9 S 1 V DYNAMIC PARAMETERS (note 2) 1150 pF 185 pF Crss 145 pF Total gate charge Qg 15 nC Gate-source charge Qgs 0.8 nC Gate-drain charge Qgd 3.2 nC td(on) 6 ns VGS=5V,VDD=10V, 13 ns RL=1.35Ω,RGEN=3Ω 52 ns 16 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 C,May,2015 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics 20 22 2.2V Pulsed VDS=5V 20 Pulsed DRAIN CURRENT DRAIN CURRENT 1.8V 12 8 15 ID (A) 16 ID (A) 2.0V 1.5V 10 Ta=100℃ 5 Ta=25℃ 4 VGS=1.2V 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 80 5 4 VDS 0 6 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE ID RDS(ON) 80 —— VGS (V) VGS Ta=25℃ Ta=25℃ Pulsed (mΩ) 40 ON-RESISTANCE ON-RESISTANCE 60 RDS(ON) 60 RDS(ON) (mΩ) Pulsed VGS=2V VGS=10V 20 40 ID=3A 20 0 0 0 4 8 12 DRAIN CURRENT ID 16 0 20 2 4 6 GATE TO SOURCE VOLTAGE (A) 10 (V) IS —— VSD Threshold Voltage 10 0.80 8 VGS Ta=25℃ IS (A) 0.75 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) Pulsed 0.70 ID=250uA 0.65 1 0.1 0.60 0.55 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 0.01 0.4 125 (℃ ) 0.6 0.8 SOURCE TO DRAIN VOLTAGE 3 1.0 1.2 VSD (V) C,May.2015 ')1:%;/$3DFNDJH2XWOLQH'LPHQVLRQV 6\PERO A A1 A3 D E D1 E1 k b e L 'LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[ 0.700 0.800 0.000 0.050 0.203REF. 1.924 2.076 4.924 5.076 1.350 1.550 2.950 3.150 0.200MIN. 0.200 0.300 0.500TYP. 0.424 0.576 'LPHQVLRQV,Q,QFKHV 0LQ 0D[ 0.028 0.031 0.000 0.002 0.008REF. 0.076 0.082 0.194 0.200 0.053 0.061 0.116 0.124 0.008MIN. 0.008 0.012 0.020TYP. 0.017 0.023 ')1:%;/$6XJJHVWHG3DG/D\RXW 4 C,May,2015 DFNWB5X2-6L Tape and Reel www.cj-elec.com 5 C,May,2015