ON MBRM130LT3G Surface mount schottky power rectifier Datasheet

MBRM130LT1G,
NRVBM130LT1G,
MBRM130LT3G,
NRVBM130LT3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The SchottkyPOWERMITE employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
thePOWERMITE has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles,  1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features









SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
ANODE
CATHODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
1
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
 Human Body Model = 3B (> 16 kV)
 Machine Model = C (> 400 V)
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:





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POWERMITE is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
M
BCGG
2
M
= Date Code
BCG = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRM130LT1G
POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
NRVBM130LT1G
POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
MBRM130LT3G
POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
NRVBM130LT3G
POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 5
1
Publication Order Number:
MBRM130L/D
MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 135C)
Symbol
Value
Unit
VRRM
VRWM
VR
30
V
IO
A
1.0
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 135C)
IFRM
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
Storage Temperature
Tstg
−55 to 150
C
Operating Junction Temperature
TJ
−55 to 125
C
Voltage Rate of Change
(Rated VR, TJ = 25C)
A
2.0
A
50
dv/dt
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Value
Unit
Rtjl
Rtjtab
Rtja
35
23
277
C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
VF
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
IR
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 30 V)
(VR = 20 V)
(VR = 10 V)
Unit
TJ = 25C
TJ = 85C
0.30
0.38
0.52
0.20
0.33
0.50
TJ = 25C
TJ = 85C
0.41
0.13
0.05
11
5.3
3.2
V
mA
10
TJ = 150C
TJ = 125C
1.0
TJ = 85C
TJ = 25C
TJ = −40C
0.1
0
0.1
0.2
0.3
0.4
0.6
0.5
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%
10
TJ = 150C
1.0
TJ = 125C
TJ = 85C
TJ = 25C
TJ = −40C
0.1
0
0.1
0.2
0.3
0.4
0.5
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
0.6
100E−3
IR, REVERSE CURRENT (AMPS)
10E−3
TJ = 85C
1.0E−3
100E−6
TJ = 25C
10E−3
TJ = 85C
1.0E−3
100E−6
10E−6
1.0E−6
IR, MAXIMUM REVERSE CURRENT (AMPS)
MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
25
5.0
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
0
30
10E−6
TJ = 25C
0
1.8
dc
1.6
FREQ = 20 kHz
1.4
SQUARE WAVE
1.2
1.0
Ipk/Io = p
0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
25
35
45
85 95 105 115 125
55 65 75
TL, LEAD TEMPERATURE (C)
TJ, DERATED OPERATING TEMPERATURE (_C)
Figure 5. Current Derating
C, CAPACITANCE (pF)
1000
TJ = 25C
100
10
0
5.0
20
25
10
15
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 4. Maximum Reverse Current
PFO, AVERAGE POWER DISSIPATION (WATTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Reverse Current
25
5.0
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 7. Capacitance
0.7
0.6
Ipk/Io = 5
0.5
Ipk/Io = p
SQUARE
WAVE
dc
Ipk/Io = 10
0.4
Ipk/Io = 20
0.3
0.2
0.1
0
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
0.2
0.6
1.4
0.4
0.8
1.0
1.2
IO, AVERAGE FORWARD CURRENT (AMPS)
1.6
Figure 6. Forward Power Dissipation
Rtja = 10C/W
15C/W
20C/W
25C/W
35C/W
0
25
15
5.0
10
20
VR, DC REVERSE VOLTAGE (VOLTS)
30
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ = TJmax − r(t)(Pf + Pr) where
TJ may be calculated from the equation:
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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3
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
1.0%
0.001
0.00001
Rtjl(t) = Rtjl*r(t)
0.0001
0.001
0.01
1.0
0.1
10
100
T, TIME (s)
Figure 9. Thermal Response Junction to Lead
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
Rtjl(t) = Rtjl*r(t)
1.0%
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
T, TIME (s)
Figure 10. Thermal Response Junction to Ambient
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4
10
100
1,000
MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE E
F
0.08 (0.003)
C
−A−
J
M
T B
S
C
S
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
PIN 1
−B−
DIM
A
B
C
D
F
H
J
K
L
R
S
K
PIN 2
R
L
J
D
H
−T−
0.08 (0.003)
M
T B
S
C
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.75
2.05 0.069
0.081
1.75
2.18 0.069
0.086
0.85
1.15 0.033
0.045
0.40
0.69 0.016
0.027
0.70
1.00 0.028
0.039
-0.05
+0.10 -0.002 +0.004
0.10
0.25 0.004
0.010
3.60
3.90 0.142
0.154
0.50
0.80 0.020
0.031
1.20
1.50 0.047
0.059
0.50 REF
0.019 REF
STYLE 1:
PIN 1. CATHODE
2. ANODE
S
SOLDERING FOOTPRINT*
0.635
0.025
2.67
0.105
0.762
0.030
2.54
0.100
1.27
0.050
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MBRM130L/D