Kexin BAR61 Silicon pin diode Datasheet

Diodes
SMD Type
Silicon PIN Diodes
BAR60;BAR61
Unit: mm
Features
RF switch
RF attenuator for frequencies above 10 MHz
Absolute M axim um R atings T a = 25
P aram eter
R everse voltage
Forward current
Total power dissipation, T S
65
(N ote 1)
S ym bol
V alue
U nit
VR
100
V
IF
140
mA
P tot
250
mW
Tj
150
S torage tem perature range
T stg
-55 to +150
O perating tem perature range
T op
-55 to +150
Junction tem perature
Junction - am bient
1)
Junction - soldering point
R th
JA
580
K /W
R th
JS
340
K /W
N ote
1.U nit R ating.Total R ating = U nit R ating
1.5
Electrical Characteristics Ta = 25
Parameter
Symbol
Reverse current
IR
Forward voltage
VF
CT
Diode capacitance
Conditions
Max
Unit
V R = 50 V
Min
Typ
100
nA
V R = 100 V
1
IF = 100 mA
1.25
V R = 50 V, f = 1 MHz
0.25
V R = 0, f = 100 MHz
0.2
0.5
A
V
pF
Zero bias conductance
gp
V R =0 V,f=100 MHz
50
S
Charge carrier life time
ôL
IF = 10 mA, IR = 6 mA
1
S
f = 100 MHz, IF = 0.01 mA
2800
IF = 0.1 mA
380
IF = 1.0 mA
45
IF = 10 mA
7
Differential forward resistance
rf
Marking
Type
BAR60
BAR61
Marking
60
61
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