Filtronic LP6836P70 Packaged medium power phemt Datasheet

LP6836P70
PACKAGED MEDIUM POWER PHEMT
•
FEATURES
♦ 23 dBm Output Power at 1-dB Compression at 15 GHz
♦ 11.5 dB Power Gain at 15 GHz
♦ 50% Power-Added Efficiency
•
DESCRIPTION AND APPLICATIONS
The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range.
It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam
photolithography.
Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers.
•
ELECTRICAL SPECIFICATIONS @ TAmbient = 25°°C*
Parameter
Symbol
Test Conditions
Min
Saturated Drain-Source Current**
IDSS
VDS = 2 V; VGS = 0 V
80
Power at 1-dB Compression
P-1dB
VDS = 5 V; IDS = 50% IDSS
22
23
dBm
Power Gain at 1-dB Compression
G-1dB
VDS = 5 V; IDS = 50% IDSS
10.5
12
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
PIN = 20 dBm
50
%
Maximum Drain-Source Current
IMAX
VDS = 2 V; VGS = 1 V
190
mA
Transconductance
GM
VDS = 2 V; VGS = 0 V
95
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 2 mA
Gate-Source Breakdown
Voltage Magnitude
|VBDGS|
IGS = mA
70
Typ
Max
Units
125
mA
1
15
µA
-0.25
-0.8
-2.0
V
-11
-15
V
Gate-Drain Breakdown
|VBDGD|
IGD = 2 mA
-12
-16
V
Voltage Magnitude
*frequency=15 GHz, unless otherwise noted
**Formerly binned as: LP6836P70-1 = 80-95 mA, LP6836P70–2 = 96-105 mA, and LP6836P70-3 = 106-125 mA
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/22/01
Email: [email protected]
LP6836P70
PACKAGED MEDIUM POWER PHEMT
•
ABSOLUTE MAXIMUM RATINGS
Notes:
•
•
•
•
Parameter
Symbol
Test Conditions
Drain-Source Voltage
VDS
Gate-Source Voltage
Min
Max
Units
TAmbient = 22 ± 3 °C
7
V
VGS
TAmbient = 22 ± 3 °C
-4
V
Drain-Source Current
IDS
TAmbient = 22 ± 3 °C
IDSS
mA
Gate Current
IG
TAmbient = 22 ± 3 °C
18
mA
RF Input Power
PIN
TAmbient = 22 ± 3 °C
150
mW
Channel Operating Temperature
TCH
TAmbient = 22 ± 3 °C
175
ºC
Storage Temperature
TSTG
—
175
ºC
Total Power Dissipation
PTOT
TAmbient = 22 ± 3 °C
1.0
W
-65
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
PTOT= 1.0W – (.0036W/°C) x THS
where THS = heatsink or ambient temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
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HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/22/01
Email: [email protected]
LP6836P70
PACKAGED MEDIUM POWER PHEMT
•
PACKAGE OUTLINE
(dimensions in mils)
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/22/01
Email: [email protected]
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