NZD560A NZD560A NPN Low Saturation Transistor • These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. • Sourced from process NA. D-PAK 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 55 VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current TJ, TSTG Operating and Storage Junction Temperature Range - Continuous Units V 3 A - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operation. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Conditions Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 55 V BVCBO Emitter-Base Breakdown Voltage IE = 100µA, IE = 0 80 V BVEBO Collector-Base Breakdown Voltage IE = 100µA, IC = 0 5 ICBO Collector-Base Cutoff Current VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 100°C 100 10 nA µA IEBO Emitter-Base Cutoff Current VEB = 4V, IC = 0 10 nA V On Characteristics * hFE DC Current Gain IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 3A, VCE = 2V IC = 1A, VCE = 3V 70 250 80 25 200 550 VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA IC = 2A, IB = 200mA IC = 1A, IB = 8mA 300 400 1.5 mV mV V VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA IC = 1A, IB = 8mA 1.25 1 V V VBE(on) Base-Emitter On Voltage IC = 1A, VCE = 2V 1 V Small Signal Characteristics Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz fT Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz 30 75 pF MHz * Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 Symbol Parameter PD Total Device Dissipation RθJA Thermal Resistance, Junction to Ambient ©2002 Fairchild Semiconductor Corporation Max. 1.5 Units W 83 °C/W Rev. B1, August 2002 NZD560A Thermal Characteristics TA=25°C unless otherwise noted NZD560A Typical Characteristics 1000 1000 0 0 Ta=-40 C 0 VCE=2V Ta=125 C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN Ta=125 C 0 Ta=25 C 100 10 0.1 1 0 Ta=-40 C VCE=3V 0 Ta=25 C 100 10 0.1 10 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. DC Current Gain IC=10IB IC=10IB VBE(sat)[V], SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE 10 1 0 Ta=125 C 0.1 0 Ta=25 C 0 Ta=-40 C 0.01 1E-3 0.01 0.1 1 10 0 Ta=25 C 0 Ta=-25 C 1 0 Ta=125 C 0.1 0.1 IC[A], COLLECTOR CURRENT 1 Figure 3. Colletor-Emitter Saturation Voltage 3 Figure 4. Base-Emitter Saturation Voltage 80 VCE=2V IE=0,f=1MHZ Cob[pF], OUTPUT CAPACITANCE 70 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT 60 2 50 40 0 125 C 1 0 25 C 0 30 -40 C 20 10 0 0.0 0.2 0.4 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1.2 0 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 6. Collector Output Capacitance Rev. B1, August 2002 NZD560A Typical Characteristics (Continued) PD[W], POWER DISSIPATION 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 NZD560A Package Dimensions D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.30 ±0.10 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1