AP6N3R5S Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Low On-resistance 60V RDS(ON) 3.58mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 130A S Description AP4604 series AP6N3R5 seriesare arefrom fromAdvanced Advanced Power Power innovated design and silicon and silicon process process technology technology to to achieve achievethe thelowest lowest possible onon-resistance resistance andand fast fast switching switching performance. performance. It provides It provides the designer the designer with anefficient extremedevice efficient userange in a wide with an extreme for device use in aforwide of power range of power applications. applications. The TO-220 package is widely preferred for all commercialindustrial through holeis applications. Theforlow thermal The TO-263 package widely preferred all commercialresistance low package cost contribute to theinfrared worldwide industrial and surface mount applications using reflow popular package. technique and suited for high current application due to the low connection resistance. GD S TO-263(S) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol . Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V 130 A ID@TC=100℃ Drain Current, VGS @ 10V 80 A 300 A 104 W 3.12 W 183 mJ 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation 4 3 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value Units 1.2 ℃/W 40 ℃/W 1 201612131 AP6N3R5S Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 60 - - V VGS=10V, ID=40A - - 3.58 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=5V, ID=40A - 53 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=40A - 80 128 nC Qgs Gate-Source Charge VDS=30V - 25 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 25 - nC td(on) Turn-on Delay Time VDS=30V - 17 - ns tr Rise Time ID=40A - 74 - ns td(off) Turn-off Delay Time RG=1Ω - 34 - ns tf Fall Time VGS=10V - 21 - ns Ciss Input Capacitance VGS=0V - 4500 7200 pF Coss Output Capacitance VDS=30V - 2800 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Rg Gate Resistance - 2.3 4.6 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V . f=1.0MHz Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=40A, VGS=0V - 55 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 56 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test o 3.Starting Tj=25 C , VDD=30V , L=0.3mH , RG=25Ω 2 4.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6N3R5S 400 200 o o T C =150 C 10V 9.0V T C = 25 C 10V 9.0V 8.0V 7.0V ID , Drain Current (A) ID , Drain Current (A) 160 300 8.0V 7.0V 200 V G =6.0V 120 V G =6.0V 80 100 40 0 0 0 4 8 12 16 0 20 Fig 1. Typical Output Characteristics 4 6 8 10 Fig 2. Typical Output Characteristics 2.4 8 I D =40A I D =40A V G =10V T C =25 o C 2.0 6 5 . 4 Normalized RDS(ON) 7 RDS(ON) (mΩ) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 1.6 1.2 0.8 3 0.4 2 5 6 7 8 9 -100 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 100 I D =250uA Normalized VGS(th) 1.6 IS(A) 10 T j =150 o C T j =25 o C 1.2 0.8 1 0.4 0.1 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP6N3R5S f=1.0MHz 8000 I D =40A V DS =30V 10 6000 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 C iss 4000 C oss 4 2000 2 C rss 0 0 0 20 40 60 80 1 100 21 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 61 81 Fig 8. Typical Capacitance Characteristics 1000 Operation in this area limited by RDS(ON) 10 100us 1ms 1 10ms 100ms DC 0.1 T C =25 o C Single Pulse . Normalized Thermal Response (Rthjc) 1 100 ID (A) 41 V DS ,Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.01 0.01 0.1 1 10 0.00001 100 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 160 160 ID , Drain Current (A) ID , Drain Current (A) V DS =5V 120 80 120 80 T j =150 o C 40 40 0 0 o T j =25 C o T j = -55 C 25 50 75 100 T C , Case Temperature ( 125 o C) Fig 11. Drain Current v.s. Case Temperature 150 0 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 12. Transfer Characteristics 4 AP6N3R5S 40 160 PD, Power Dissipation(W) T j =25 o C RDS(ON) (mΩ) 30 20 10 120 80 40 V GS =10V 0 0 0 20 40 60 80 100 0 120 50 100 150 T C , Case Temperature( o C) I D , Drain Current (A) Fig 13. Typ. Drain-Source on State Resistance Fig 14. Total Power Dissipation 2 I D =1mA Normalized BVDSS 1.6 1.2 . 0.8 0.4 0 -100 -50 T 0 j 50 100 150 , Junction Temperature ( o C) Fig 15. Normalized BVDSS v.s. Junction Temperature 5 AP6N3R5S MARKING INFORMATION Part Number 6N3R5 YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 6