Filtronic FMS2003-005 High power reflective gaas sp4t switch Datasheet

FMS2003QFN-1
Preliminary Data Sheet 2.1
High Power Reflective GaAs SP4T Switch
Features:
♦
♦
♦
♦
♦
♦
♦
Functional Schematic
3x3x0.9mm Packaged pHEMT Switch
NiPdAu finish for Military and High
reliability applications
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
High isolation: >30dB at 0.9GHz
Low Insertion loss: 0.5dB at 0.9GHz
Low control current
ANT
RF1
RF2
RF3
RF4
Description and Applications:
The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset applications. The die is fabricated using the
Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for
switch applications. The FMS2003QFN is designed for use in dual/tri and quad band GSM handset
antenna switch modules and RF front-end modules. It can also find use in other applications where
high power and linear RF switching is necessary.
Electrical Specifications:
Parameter
Insertion Loss
Return Loss
Isolation
2nd Harmonic Level
3rd Harmonic Level
Switching speed : Trise, Tfall
P0.1dB
IP3
Cross modulation
Control Current
(TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω)
Test Conditions
Min
Typ
Max
Units
0.5 – 1.0 GHz
<0.62
dB
1.0 – 2.0 GHz
<0.65
dB
0.5 – 2.5 GHz
20
dB
0.5 – 1.0 GHz
>30
dB
1.0 – 2.0 GHz
>26
dB
1 GHz, Pin = +35 dBm, 100% Duty Cycle
-69
dBc
2 GHz, Pin = +33dBm, 100% Duty Cycle
-67
dBc
1 GHz, Pin = +35 dBm, 100% Duty Cycle
-69
dBc
2 GHz, Pin = +33dBm, 100% Duty Cycle
-70
dBc
10% to 90% RF
<0.15
µs
90% to 10% RF
<0.06
µs
0.5 – 1.0 GHz
38
1.0 – 2.0 GHz
38
0.5 – 1.0 GHz
>65
1.0 – 2.0 GHz
>62
Tx1 836Hz Tx2 837MHz +21dBm Rx1 880MHz –25dBm
Tx1 1879.5MHz Tx2 1880.5MHz +21dBm,Rx1 1960MHz –25dBm
+35dBm RF input @1GHz
dBm
dBm
>110
dBm
<10
µA
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email: [email protected]
Website: www.filtronic.com
FMS2003QFN-1
Preliminary Data Sheet 2.1
Absolute Maximum Ratings:
Parameter
Symbol
Absolute Maximum
Max Input Power
Pin
+38dBm
Control Voltage
V ctrl
+5V
Operating Temp
T oper
-40°C to +100°C
Storage Temp
T stor
-55°C to +150°C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
ANT
TO
RF1
ANT
TO
RF2
ANT
TO
RF1
ANT
TO
RF2
Isolation
Isolation
Isolation
Isolation
Isolation
Switch
State
V1
V2
V3
V4
(A)
HIGH
LOW
LOW
LOW
(B)
LOW
HIGH
LOW
LOW
Isolation
(C)
LOW
LOW
HIGH
LOW
Isolation
Isolation
(D)
LOW
LOW
LOW
HIGH
Isolation
Isolation
Insertion
Loss
Insertion
Loss
Insertion
Loss
Isolation
Isolation
Insertion
Loss
General Test Conditions:
LOW = 0V to 0.2V
Bias Voltages
Note:
HIGH +2.5V to +5V
Port Impedances
50Ω
Off arm termination
50Ω
External DC blocking capacitors are required on all RF ports (typ: 100pF)
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email: [email protected]
Website: www.filtronic.com
Preliminary Data Sheet 2.1
FMS2003QFN-1
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions VCTRL = 2.5V (high) & 0V (low), TAMBIENT = 25°C unless otherwise stated)
FMS2003QFN DE EMBEDDED INSERTION LOSS
0
-0.1
-0.2
-0.3
dB
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
FMS2003QFN ISOLATION
-15
-20
Key To Measurements
dB
-25
-30
-35
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
--
Measurement ay -40°C
--
Measurement ay 85°C
--
Measurement ay 25°C
FMS2003QFN RETURN LOSS
-10
dB
-15
-20
-25
-30
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email: [email protected]
Website: www.filtronic.com
FMS2003QFN-1
Preliminary Data Sheet 2.1
Pad Layout:
V1
Pin 1
12
ANT
V2
11
10
9
RF1
RF3
8
PADDLE
2
7
3
4
V3
5
RF2
RF4
6
V4
*View from the top of the package
Pin Number
Description
1
RF1
2
GND
3
RF3
4
V3
5
N/C
6
V4
7
RF4
8
GND
9
RF2
10
V2
11
ANT RF
12
V1
PADDLE
GND
QFN 12 Lead 3*3 Package Outline:
♦
NiPdAu finish for Military and High reliability applications
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email: [email protected]
Website: www.filtronic.com
FMS2003QFN-1
Preliminary Data Sheet 2.1
Evaluation Board:
BOM
Label
C6
C1
C10, C11, C12,
C7
C5
Component
Capacitor, 470pF, 0603
C13
C2
C1,C2,
Capacitor, 100pF, 0402
C3,C4,C5
C6, C7, C8, C9
C3
C8 C9
Capacitor, 47pF, 0402
C4
Preferred evaluation board material is 0.25 mm thick
C10
BOARD
C11 C12 C13
ROGERS RT4350. All RF tracks should be 50 ohm
characteristic impedance.
Evaluation Board De-Embedding Data (Measured):
0
FMS2003QFN CALIBRATION BOARD INSERTION LOSS
FMS2003QFN CALIBRATION BOARD RETURN LOSS
-15
-0.1
-0.2
-20
-0.3
-25
-0.5
dB
dB
-0.4
-0.6
-30
-0.7
-0.8
-35
-0.9
-1
0.5
1
1.5
2
2.5
Frequency (GHz)
3
-40
3.5
0.5
1
1.5
2
2.5
Frequency (GHz)
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 988 1845
Fax: +1 (408) 970 9950
Email: [email protected]
Website: www.filtronic.com
3
3.5
Preliminary Data Sheet 2.1
FMS2003QFN-1
Ordering Information:
Part Number
Description
FMS2003-005
Packaged Die
FMS2003-005-EB
Packaged die mounted on evaluation board
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A as defined in Jedec Standard No.22-A114
(0-500V).
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
Preferred Assembly Instructions:
Please refer to FCSL applications note: FAN 003 (handling and assembly of Filtronic QFN devices)
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
6
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 988 1845
Fax: +1 (408) 970 9950
Email: [email protected]
Website: www.filtronic.com
Similar pages