ADPOW MRF5943C Rf & microwave discrete low power transistor Datasheet

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF5943C
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
Maximum Available Gain = 17dB @ 300MHz
•
High fT – 1.2 GHz typical
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and
oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
VCBO
VEBO
IC
P
D
TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Value
30
Unit
V
40
V
Emitter-Base Voltage
3.5
V
Collector Current
400
mA
Total Device Dissipation
Storage Temperature
1.0
W
-65 to +150
°C
125
ºC/W
Thermal Data
R
TH(J-C)
Thermal Resistance, Junction – Case
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF5943C
ELECTRICAL SPECIFICATIONS (Tcase = 25°
25° C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCEO
IC = 5 ma IB = 0
30
-
-
V
BVCBO
IC = 0.1 mA, IE = 0
40
-
-
V
BVEBO
IE = 0.1 mA, IC = 0
3.5
-
-
V
ICBO
VCB = 15 V, VBE = 0 V
-
-
50
µA
ICEO
VCE = 20 V, VBE = 0 V
-
-
10
µA
hFE
IC = 50 mA, VCE = 15 V
25
-
300
DYNAMIC
Symbol
Ftau
NF
G
U max
Test Conditions
Current-Gain Bandwidth Product
(IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz)
IC = 35 mA
VCE = 15 V
f = 200 MHz
IC = 10 mA
VCE = 15 V
f = 200 MHz
Value
Typ.
Max.
-
1.2
-
GHz
-
5.5
-
dB
-
12
-
dB
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
Min.
MRF5943C
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Similar pages