FMS2022 Advanced Product Information 1.1 DC–4 GHz MMIC SP4T Absorptive Switch Functional Schematic Features: OUT1 GND OUT2 A2 ♦ ♦ ♦ ♦ ♦ Available in die form Suitable for WLAN Applications Low Insertion loss <1.3 dB at 4 GHz typical High isolation >30 dB at 4 GHz typical Absorptive B2 A1 GND B1 IN A4 B4 GND A3 B3 OUT4 GND OUT3 Description and Applications: The FMS2022 is a low loss high isolation DC-4GHz single pole four throw Gallium Arsenide absorptive switch designed for use in WLAN Applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology that offers leading edge performance optimised for switch applications. Simulated Electrical Specifications: (TAMBIENT = 25°C, Vctrl = 0V/-5V), ZIN = ZOUT = 50Ω) Parameter Conditions Min Typ Max Units Insertion Loss (DC-2) GHz 1 dB Insertion Loss (2-4) GHz 1.3 dB Isolation (DC-2) GHz 45 dB Isolation (2-4) GHz 30 dB Return Loss (On state) (DC-4) GHz 17 dB Return Loss (Off state) (DC-4) GHz 12 dB Switching speed 50% control to 10% / 90% RF 25 ns P1dB (1-100) MHz 17 dBm P1dB (100-500) MHz 24 dBm P1dB (0.5-40) GHz 28 dBm Note: External DC decoupling capacitors are required on all DC lines (typ: 47pF) 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filtronic.co.uk/semis FMS2022 Advanced Product Information 1.1 Truth Table: Control Lines RF Path A1 B1 A2 B2 A3 B3 A4 B4 IN-OUT1 IN-OUT2 IN-OUT3 IN-OUT4 -5V 0V 0V -5V 0V -5V 0V -5V ON OFF OFF OFF 0V -5V -5V 0V 0V -5V 0V -5V OFF ON OFF OFF 0V -5V 0V -5V -5V 0V 0V -5V OFF OFF ON OFF 0V -5V 0V -5V 0V -5V -5V 0V OFF OFF OFF ON Note: -5V ± 0.5V, 0V+0.5V Pad Layout: OUT1 GND1 OUT2 A2 B2 A1 GND3 B1 IN A4 GND4 B4 A3 B3 OUT4 GND2 OUT3 Pad Reference Description Pin Coordinates (µm) IN RFIN 142,657.5 OUT1 RFOUT1 142,1174 OUT2 RFOUT2 675,1174 OUT3 RFOUT3 675,141 OUT4 RFOUT4 142,141 A1 A1 805,878 B1 B1 805,731 A2 A2 805,1172 B2 B2 805,1025 A3 A3 805,290 B3 B3 805,143 A4 A4 805,584 B4 B4 805,437 GND1 GND 504,1174 GND2 GND 504,141 GND3 GND 142,869 GND4 GND 142,446 Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size ( µm x µm ) Die Thickness (µm) Min. Bond Pad Pitch(µm) 950 x 1320 150 130 Min. Bond pad Opening (µm xµm ) 94 x 94 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filtronic.co.uk/semis FMS2022 Advanced Product Information 1.1 Simulated Performance: Insertion Loss Insertion Loss (dB) -0.8 -0.9 -1 -1.1 -1.2 -1.3 0 1 2 3 Frequency (GHz) 4 Isolation Isolation (dB) -30 -40 -50 -60 -70 0 1 2 3 Frequency (GHz) 4 Return Loss Return Loss (dB) -10 -15 On state -20 Off state -25 -30 -35 0 1 2 3 Frequency (GHz) 4 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filtronic.co.uk/semis Advanced Product Information 1.1 FMS2022 Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filtronic.co.uk/semis