AP2763W-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic BVDSS 750V RDS(ON) 1.45Ω ID ▼ Simple Drive Requirement 8.0A G S Description AP2763 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. G D S TO-3P Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 750 V VGS Gate-Source Voltage +30 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V 8.0 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 5.0 A 30 A 138 W 1.11 W/℃ 32 mJ 8.0 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.9 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W Data & specifications subject to change without notice 1 200807291 AP2763W-A o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 750 - - V - 0.9 - V/℃ VGS=10V, ID=4.0A - - 1.45 Ω BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 3 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=4.0A - 3.6 - S IDSS Drain-Source Leakage Current VDS=700V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+30V - - +100 nA ID=4A - 47 75 nC 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=600V - 8.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 20 - nC 3 td(on) Turn-on Delay Time VDD=360V - 15 - ns tr Rise Time ID=4A - 13 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 74 - ns tf Fall Time RD=90Ω - 21 - ns Ciss Input Capacitance VGS=0V - 1880 3010 pF Coss Output Capacitance VDS=25V - 140 - pF Crss Rg Reverse Transfer Capacitance f=1.0MHz - 9 - pF Gate Resistance f=1.0MHz - 2.6 3.9 Ω Min. Typ. IS=4.0A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=4.0A, VGS=0V, - 400 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - µC Notes: 1.Pulse width limited by max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , RG=25Ω , IAS=8.0A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2763W-A 5.0 5.00 10V 7.0V 5.0V ID , Drain Current (A) 4.0 10V 7.0V 5.0V 4.5V T C =150 o C 4.00 ID , Drain Current (A) o T C =25 C 3.0 4.5V 2.0 3.00 2.00 V G =4.0V 1.00 1.0 V G =4.0V 0.00 0.0 0 2 4 6 8 10 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.0 1.2 I D = 4.0 A V G =10V 2.5 Normalized RDS(ON) Normalized BVDSS (V) 1.1 1.0 2.0 1.5 1.0 0.9 25 0.5 0.0 0.8 -50 0 50 100 -50 150 0 50 100 150 T j , Junction Temperature ( o C ) o Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.6 10.0 T j =150 o C T j =25 o C IS(A) 6.0 Normalized VGS(th) (V) 8.0 4.0 1.2 0.8 2.0 0.0 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2763W-A f=1.0MHz 14 10000 I D = 4.5 A V DS = 380 V V DS = 480 V V DS = 600 V 10 C iss 1000 C (pF) VGS , Gate to Source Voltage (V) 12 8 C oss 100 6 4 C rss 10 2 0 1 0 10 20 30 40 50 1 60 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100.00 10.00 ID (A) 100us 1ms 10ms 1.00 100ms T C =25 o C Single Pulse DC Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 25 Single Pulse 0.01 0.10 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-3P E A Millimeters SYMBOLS φ c1 D D1 b1 b2 MIN NOM MAX A 4.50 4.80 5.10 b b1 b2 c c1 0.90 1.00 1.30 1.80 2.50 3.20 1.30 -- 2.30 0.40 0.60 0.90 1.40 -- 2.20 D 19.70 20.00 20.30 D1 14.70 15.00 15.30 E 15.30 -- 16.10 e 4.45 5.45 6.45 L 17.50 -- 20.50 φ 3.00 3.20 3.40 L c 1.All Dimensions Are in Millimeters. b 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-3P Part Number Package 2763W LOGO A YWWSSS Option Date Code (YWWSSS) Y :Last Digit Of The Year WW:Week SSS :Sequence 5